基于队列式缓存结构的视频图像存储算法

针对视频图像数据实时存储过程中普遍存在的丢帧问题,通过深入分析典型的存储算法,找出实时存储过程中视频图像数据丢失的原因：计算机在连续存储相同大小的文件时,存储速度在一定的范围内波动.本文采用队列式缓存结构有效地消除了存储速度波动所带来的影响,保证了在数据流速小于磁盘平均存储速度的前提下,高速视频图像数据的实时存储,解决了丢帧问题.实践验证了该算法的可行性与可靠性.     

弱形变双奇核158Tm中的旋称反转

通过融合蒸发反应¹⁴⁴Nd(¹⁹F,5n)布居了双奇核¹⁵⁸Tm的高自旋态. 扩展了原来已知的带结构, 并建立了一条新转动带. 通过与相邻核的比较, 讨论¹⁵⁸Tm核中两条四准粒子带的内禀组态, 并分别指定为πh_11/2\otimes νh_9/2(α=+1/2)\otimes (νi_13/2)²和πh_11/2\otimes νh_9/2(α=－1/2)\otimes (νi_13/2)² 组态. 建立在πh_11/2\otimes νi_13/2组态上的转动带被观测到呈现持续旋称反转现象, 而前述的两条高自旋区的 四准粒子转动带也呈旋称反转. 对这两种类型的旋称反转现象的可能机制进行了简单而定性的讨论.     

13.5—14.6MeV中子能区锗的同位素反应截面的测量

报道了在13.5—14.6MeV中子能区用活化法测得的⁷⁶Ge(n,2n)⁷⁵Ge, ⁷⁰Ge(n,2n)⁶⁹Ge, ⁷⁰Ge(n, p)⁷⁰Ga, ⁷²Ge(n,p)⁷²Ga, ⁷³Ge(n,p)⁷³Ga, ⁷²Ge(n,α)^69mZn和⁷⁴Ge(n, α)^71mZn的反应截面值. 中子注量用⁹³Nb(n,2n)^92mNb反应截面得到. 单能中子由T(d,n)⁴He反应获得. 同时还列举了已收集到的文献值以作比较.     

Theoretical study of the 5p56s – 5p6 spectra of neutral xenon

Recent high precision measurements on the lifetime of the metastable 6s[3/2]₂ state of atomic xenon display a difference with previous predictions by a factor of 2–3. In the present work, a systematic relaxation and correlation approach, which has been developed on the basis of a widely used multi-configuration Dirac-Fock method, is applied to study the electric dipole allowed E1 and forbidden M1, E2 and M2 transitions between the 5p⁵ 6s and 5p⁶ configurations. We systematically include the correlation effects which arise from all the single and double excitations from the occupied shells into the (n=6–10) active sets and the relaxation effects caused by change of the electron density between the radiative initial- and final-states. This study not only reduces greatly the existing discrepancy in the lifetime of the 6s[3/2]₂ state, but also presents rather consistent results for both the lifetime of the metastable 6s'[1/2]₀ state and the oscillator strength of the 5p⁵ 6s - 5p⁶ E1 resonant transitions.     

Zeeman effects on d-wave superconductor and tunneling spectrum in normal-metal/d-wave superconductor tunnel junction

We study the Zeeman effect on the d-wave superconductor and tunneling spectrum in normal-metal(N)/d-wave superconductor(S) junction by applying a Zeeman magnetic field to the S. It is shown that: (1) the Zeeman magnetic field can lead to the S gap decreasing, and with the increase in Zeeman energy, the superconducting state is changed to the normal state, exhibiting a first-order phase transition; (2) the Zeeman magnetic field may make the zero-bias conductance peak split into two peaks, and the energy difference between the two splitting peaks in the conductance spectrum is equal to 2h ₀ (h ₀ is the Zeeman energy); (3) both the barrier strength of interface scattering and the temperature can lower the magnitudes of splitting peaks, of which the barrier strength can lead to the splitting peaks becoming sharp and the temperature can smear out the peaks, however, neither of them can influence the Zeeman effect.     

铁分子Fe2的自旋极化效应

采用密度泛函方法(B3P86)对 Fe_2分子结构进行了优化.计算结果中未观察到自旋污染,基态波函数与高态波函数并未混杂,结果表明,Fe_2中有8个未配对电子,这些电子空间分布不同和自旋平行产生的自旋极化效应,使 Fe_2能量最低.计算结果表明,Fe_2分子的基态是~9∑_g~ ,并非~7Δ_u,进而表明 Fe_2的自旋平行效应比电子自旋配对效应要强.计算得到该分子基态的二阶、三阶和四阶力常数分别为1.4115×10~(-2)aJ/nm~2、-37.1751×10~3aJ/nm~3和 98.7596×10~4aJ/nm~4；光谱数据ω_eχ_e、B_e、α_e分别为0.3522、0.0345、 0.4963×10~(-4)cm~(-1)；离解能为3.5522eV,平衡键长为0.2137nm,振动频率为292.914cm~(-1)；并得到了 Murrel-Sorbie 函数.     

The Quantum Coherence Effects in Degenerate Two-level Atomic System

The quantum coherence effects of the transition Fe = 2←→Fg = 3 depending on the polarization of the coupling and probe beam are observed in a Cs vapor cell. The splitting of electromagnetically induced transparency （EIT） window is observed when the degeneracy of two-level system is broken using a magnetic field. It is also shown that the splitted transparency points of two of three windows are shifted with the intensity of magnetic field （ i. e. Zeeman splitting in the upper and lower levels ） increasing. On the contrary, when we fix the intensity of magnetic field, and increase the Rabi frequency of the coupling beam, the splitted transparency peaks become wider. A qualitative agreement between experiment and theory is found.     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe 3d态密度存在,同时,在价带谱中2-10eV处有强度较大的S 3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS2价带结构中导带宽度约为2.4eV,导带上方仍存在第二能隙,其宽度约为2.8eV.     

SHS等离子喷涂制备FeAl2O4-Al2O3-Fe纳米复合涂层的研究

利用SHS等离子喷涂技术,将经过机械团聚法制备的Fe2O3-Al复合粉体送入等离子焰流,沉积出厚度约为400 μm的复合涂层.利用XRD,SEM 和TEM等检测手段对涂层的成分和组织进行了分析,测定了涂层的显微硬度、断裂韧性以及耐磨性.结果表明涂层为具有纳米结构的FeAl2O4-Al2O3-Fe纳米复合组织;涂层的显微硬度为HV100g870;断裂韧性是普通Al2O3涂层的2倍;无润滑磨损的耐磨性是普通Al2O3涂层的2.5倍.