Test of the gravitational inverse square law at millimeter ranges

We report a new test of the gravitational inverse square law at millimeter ranges by using a dual-modulation torsion pendulum. An I-shaped symmetric pendulum and I-shaped symmetric attractors were adopted to realize a null experimental design. The non-Newtonian force between two macroscopic tungsten plates is measured at separations ranging down to 0.4 mm, and the validity of the null experimental design was checked by non-null Newtonian gravity measurements. We find no deviations from the Newtonian inverse square law with 95% confidence level, and this work establishes the most stringent constraints on non-Newtonian interaction in the ranges from 0.7 to 5.0 mm, and a factor of 8 improvement is achieved at the length scale of several millimeters.     

1180 nm Raman laser operation of end-pumping Nd:GdAl3(BO3)4/SrWO4 crystal

We present an end-pumped continuous-wave Raman laser at 1180 nm with a 60 mm long pure crystal SrWO₄ and an Nd:GdAl₃(BO₃)₄ crystal. The highest output power Raman laser at 1180 nm is 15.5 mW corresponding to the pump power of 1.75 W. Results indicate that the intense self-doubling frequency effect of GdAl₃(BO₃)₄ reduces the 1180 nm Raman laser output.     

Analysis of current–voltage and capacitance–voltage characteristics of perylene-monoimide/n-Si Schottky contacts

The electrical and interface state properties of Au/perylene-monoimide (PMI)/n-Si Schottky barrier diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. A good rectifying behavior was seen from the I–V characteristics. The series resistance (R_s) values were determined from I–V and C–V characteristics and were found to be 160 Ω and 53 Ω, respectively. The barrier height (Φ_b) of Au/PMI/n-Si Schottky diode was found to be 0.694 eV (I–V) and 0.826 eV (C–V). The ideality factor (n) was obtained to be 4.27 from the forward bias I–V characteristics. The energy distribution of interface state density (N_ss) of the PMI-based structure was determined, and the energy values of N_ss were found in the range from E_c ? 0.508 eV to E_c ? 0.569 eV with the exponential growth from midgap toward the bottom of the conduction band. The values of the N_ss without R_s are 2.11 × 10¹² eV^?1 cm^?2 at E_c ? 0.508 eV and 2.00 × 10¹² eV^?1 cm^?2 at E_c ? 0.569 eV. Based on the above results, it is clear that modification of the interfacial potential barrier for metal/n-Si structures has been achieved using a thin interlayer of the perylene-monomide.     

二氢沉香呋喃倍半萜的2D NMR研究

利用¹H-¹³C相关(¹H-¹³C COSY)谱对1β-乙酰氧基-2β(α-甲基丁酰氧基)-6α-羟基-8β,9α-二苯甲酰氧基-β-二氢沉香呋喃(A),和1β-乙酰氧基-2β(α-甲基丁酰氧基)-6α-羟基-8β(β-呋喃甲酰氧基)-9α-苯甲酰氧基-β-二氢沉香呋喃(B)的¹³C NMR谱化学位移进行了全指定,利用¹H-¹H远程相关(¹H-¹H COSYLR)谱确定了化合物A和B中6-Ha和7-He,8-He和9-He的弱偶合,以及7-He和9-He的弱W型远程偶合.     

基于部分酸水解-亲水作用色谱-质谱的黄芪多糖结构表征

来自中药的水溶性多糖具有广谱治疗和低毒性特点,是天然药物及保健品研发中的重要组成部分。针对中药多糖结构复杂、难以表征的问题,本文以中药黄芪中的多糖为研究对象,采用"自下而上"法完成对黄芪多糖的表征。首先使用部分酸水解方法水解黄芪多糖,分别考察了水解时间、酸浓度和温度的影响。在适宜条件(4 h、1.5 mol/L三氟乙酸、80 ℃)下,黄芪多糖被水解为特征性的寡糖片段。接下来,采用亲水作用色谱与质谱联用对黄芪多糖部分酸水解产物进行分离和结构表征。结果表明,提取得到的黄芪多糖主要为1→4连接线性葡聚糖,水解得到聚合度4~11的葡寡糖。本研究对其他中药多糖的表征具有一定的示范作用。     

Dynamical Parallelepipeds in Minimal Systems

For a topological dynamical system $(X,T)$ ( X , T ) and $d\in \mathbb N $ d ∈ N , the associated dynamical parallelepiped $\mathbf{Q}^{[d]}$ Q [ d ] was defined by Host–Kra–Maass. For a minimal distal system it was shown by them that the relation $\sim _{d-1}$ ～ d ? 1 defined on $\mathbf{Q}^{[d-1]}$ Q [ d ? 1 ] is an equivalence relation; the closing parallelepiped property holds, and for each $x\in X$ x ∈ X the collection of points in $\mathbf{Q}^{[d]}$ Q [ d ] with first coordinate $x$ x is a minimal subset under the face transformations. We give examples showing that the results do not extend to general minimal systems.     

考虑损伤效应的双层结构界面蠕变应力分析

针对导致多层结构失效的界面应力问题,利用 ABAQUS 大型有限元程序,对比分析了线弹性、蠕变、蠕变-损伤条件下 Silicon/Epoxy 双层材料受到温度载荷作用时界面切应力和界面剥离应力的分布规律.分析结果表明:蠕变-损伤分析所得到界面切应力和界面剥离应力的结果要比线弹性有限元及蠕变有限元分析的结果小,其中线弹性分析得到的结果是三者中最大的;最大损伤出现在双层结构的界面边缘处,且损伤随着两种材料之间弹性模量差别的增大而增大;损伤沿界面的分布规律与界面剥离应力沿界面的分布规律类似.     

流固耦合分析的一种改进CBS有限元算法

针对流固耦合问题, 发展了一种基于任意拉格朗日-欧拉(ALE)描述有限元法的弱耦合分区算法. 运用半隐式特征线分裂算法求解Navier-Stokes方程, 在压力Poisson 方程中引入质量源项以满足几何守恒律; 运用子块移动技术更新动态网格, 并配以光滑处理防止网格质量下降; 采用Newmark-β 法求解结构运动方程. 为保持流体-结构界面处速度和动量守恒, 利用修正结合界面边界条件方法求解界面处速度通量和动量通量. 运用本方法分别模拟了不同雷诺数下单圆柱横向和两向流致振动、串列双圆柱两向流致振动. 计算表明, 本文方法计算效率高, 计算结果与已有实验和数值计算数据吻合.     

Generation and classification of the translational shape-invariant potentials based on the analytical transfer matrix method

For the conventional translational shape-invariant potentials (TSIPs), it has demonstrated that the phase contribution devoted by the scattered subwaves in the analytical transfer matrix quantization condition is integrable and independent of n. Based on this fact we propose a novel strategy to generate the whole set of conventional TSIPs and classify them into three types. The generating functions are given explicitly and the Morse potential is taken as an example to illustrate this strategy.     

Size and density control of silicon oxide nanowires by rapid thermal annealing and their growth mechanism

In this work, we demonstrate a fast approach to grow SiO₂ nanowires by rapid thermal annealing (RTA). The material characteristics of SiO₂ nanowires are investigated by field emission scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field (HAADF) imaging, electron energy loss spectroscopy (EELS), and energy-filtered TEM (EFTEM). The HAADF images show that the wire tip is predominantly composed of Pt with brighter contrast, while the elemental mappings in EFTEM and EELS spectra reveal that the wire consists of Si and O elements. The SiO₂ nanowires are amorphous with featureless contrast in HRTEM images after RTA at 900°C. Furthermore, the nanowire length and diameter are found to be dependent on the initial Pt film thickness. It is suggested that a high SiO₂ growth rate of >1 μm/min can be achieved by RTA, showing a promising way to enable large-area fabrication of nanowires.