A tantalum pentoxide‐based (Ta2O5‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta2O5 resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta2O5 directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta2O5 at 1.55 μm was estimated as 3.4 × 10?14 cm2/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si3N4. All results indicate that Ta2O5 has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.
This paper presents a relatively simple numerical method to investigate the flow and heat transfer of laminar power-law fluids over a semi-infinite plate in the presence of viscous dissipation and anisotropy radiation. On one hand, unlike most classical works, the effects of power-law viscosity on velocity and temperature fields are taken into account when both the dynamic viscosity and the thermal diffusivity vary as a power-law function. On the other hand, boundary layer equations are derived by Taylor expansion, and a mixed analytical/numerical method (a pseudo-similarity method) is proposed to effectively solve the boundary layer equations. This method has been justified by comparing its results with those of the original governing equations obtained by a finite element method. These results agree very well especially when the Reynolds number is large. We also observe that the robustness and accuracy of the algorithm are better when thermal boundary layer is thinner than velocity boundary layer. 相似文献
Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrown on the N-polar face of the free-standing GaN by HVPE. High-resolution X-ray diffraction (HRXRD) measurements were performed to compare the bowings among GaN films before laser lift-off (LLO), after LLO, and after regrowth. The apparent reductions of XRD full-width at half-maximum (FWHM), along with the increase of XRD peak intensity, after regrowth clearly demonstrate the effectiveness of this method to eliminate bowings of the free-standing GaN films. 相似文献