Surface free energies of electroless Ni–P based composite coatings

Surface free energy of a solid surface gives a direct measure of intermolecular interactions at interfaces and has a strong influence on adsorption and adhesion behaviour. However few data are available for the surface free energies of electroless Ni–P based composition coatings. In this paper, the electroless Ni–P, Ni–P-surfactant, Ni–Cu–P, Ni–P–PTFE and Ni–Cu–P–PTFE composite coatings were prepared under various coating conditions. The chemical compositions, surface morphology and thickness of the coatings were measured using an energy dispersive X-ray microanalysis (EDX), a scanning electron microscope (SEM) and a digital micrometer respectively. The contact angles of water, diiodomethane and ethylene glycol on the coatings were measured automatically using dataphysics OCA-20 contact angle analyser. The surface free energy of the coatings and their components (e.g. dispersion, polar or acid/base portions) were calculated using various methods. The experimental results showed that the incorporation of surfactant or PTFE particles into Ni–P matrixes has a significant influence on the surface free energy of the coatings, while the incorporation of copper into Ni–P matrixes has no significant influence on the surface free energy of the coatings.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Invariant set and attractor of nonautonomous functional differential systems

The paper is devoted to the invariant set and periodic attractor for nonautonomous functional differential systems. Some sufficient criteria of the invariant set and periodic attractor are derived. Particularly, we have provided an estimate on existence range of periodic attractor by using the properties of nonnegative matrices and differential inequality technique.     

On structure of small contractions of odd dimensional projective varieties

Let X be a smooth projective variety of dimension 2k-1 (k≥3) over the complex number field. Assume that fR: X→Y is a small contraction such that every irreducible component Ei of the exceptional locus of fR is a smooth subvariety of dimension k. It is shown that each Ei is isomorphic to the k-dimensional projective space Pk, the k-dimensional hyperquadric surface Qk in Pk 1, or a linear Pk-1-bundle over a smooth curve.     

Primes in quadratic progressions on average

In this paper, we establish a theorem on the distribution of primes in quadratic progressions on average.     

A numerically stable algorithm for two server queue models

In this paper, we consider a queueing system in which there are two exponential servers, each having his own queue, and arriving customers will join the shorter queue. Based on the results given in Flatto and McKean, we rewrite the formula for the probability that there are exactlyk customers in each queue, wherek = 0, 1,…. This enables us to present an algorithm for computing these probabilities and then to find the joint distribution of the queue lengths in the system. A program and numerical examples are given.     

高等师范学校物理专业课程结构改革研究

为解决高等师范院校物理专业学生的知识结构和实际能力与社会需要明显不相适应的矛盾，我们对四年制物理专业的课程结构进行了全面改革。改革后，毕业生不仅能胜任普通中学或职业中学（职业中专）的教学，而且有能力参与厂矿企业的技术工作，具有更广泛的适应性和更强的竞争力。     

金属羰基化合物（CpFe（CO）2）2与金属氧化物表面作用的傅里叶变…

用漫反射红外光谱和光声红外光谱研究了金属羰基化合物（ＣｐＦｅ（ＣＯ）２）２Ｃｐ＝η＾５－Ｃ５Ｈ５与酸性，中性和碱性Ａｌ２Ｏ３及ＴｉＯ２的相互作用，结果表明，在Ａｌ２Ｏ３表面生成的洗生物种类及浓度与Ａｌ２Ｏ３的酸碱度明显相关，在酸性Ａｌ２Ｏ３表面，主要存在衍生物（ＣｐＦｅ（ＣＯ）２Ｆｅ－Ｈ－Ｆｅ（ＣＯ２Ｃｐ）＾＋及少量的ＣｐＦｅ（ＣＯ）２（－Ｏ－）；在中性Ａｌ２Ｏ３表面存在的ＣｐＦｅ（ＣＯ）２（－Ｏ     

Sensitive monitoring of humic acid in various aquatic environments with acidic cerium chemiluminescence detection.

In this research, a simple, sensitive chemiluminescence (CL) method for the determination of humic acid (HA) in water samples was first developed based on the redox reaction between humic acid and cerium(IV) in the acidic condition. Different with the former redox CL reaction which occurred in alkaline solution, no enhancers were needed and neither precipitation nor a second contamination would occur in the present CL system. Comparing with other spectrometric methods, we find that the proposed analysis system had better applicability and accuracy. Under the optimal experiment conditions, the CL peak height was linear with the concentration of HA in the range of 0.03 to 10.0 microg mL(-1). The detection limit is 0.01 microg mL(-1) (S/N = 3), and the relative standard deviation was 2.3% for 0.5 microg mL(-1) HA solution with eleven repeated measurements. The present CL method was successfully applied to the determination of HA in tap water, spring water and river water samples with good recovery from 90.0 to 110.0%. A possible CL mechanism was proposed based on the results of UV and fluorescence spectrometry and the CL spectrum of HA. It was speculated that the semi-quinone radicals in the excited state were the emitters.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.