Widely tunable, high-repetition-rate, dual signal-wave optical parametric oscillator by using two periodically poled crystals

This paper reports on a high-repetition-rate dual signal-wave (DSW) optical parametric oscillator (OPO) operating at the 1.5 μm band with tunable wavelength intervals from 2.5 nm to 69.1 nm. Two periodically poled crystals, a periodically poled lithium niobate (PPLN) with multiple gratings and a single grating MgO-doped PPLN (PPMgOLN), are cascaded in the same OPO cavity to generate dual signal-waves by using quasi-phase-matched (QPM) technique. The pump source was a Q-switched diode-pumped Nd:YVO₄ laser operating at 50 kHz. At an incident pump power of 3 W, an average output power of 169.6 mW at 1489.2 nm and 1558.3 nm has been achieved.     

Colloidal subwavelength nanostructures for antireflection optical coatings

A two-dimensional (2D) subwavelength nanostructure for antireflection coating is fabricated upon a transparent substrate. Self-assembled 2D colloidal crystals are used as a nanoscale composite material with controlled thickness and low refractive index. The feature size of the structure is approximately 105 nm. The structure is used for antireflection coating, and the measured reflectivity of a glass substrate is reduced to 0.3%. Enhanced transmission through the substrate is also observed.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Structural and upconversion fluorescence properties of Er/Yb-codoped oxychloride lead-germanium-bismuth glass

Structural and infrared-to-visible upconversion fluorescence properties of Er³⁺/Yb³⁺-codoped oxychloride lead-germanium-bismuth glass have been studied. The Raman spectrum investigation indicates that PbCl₂ plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence owing to lower phonon energy. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2, and ⁴F_9/2→⁴I_15/2, respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation.     

Structure and superconductivity in FexCu1−xBa2YCu2O7+y superconductors synthesized by high pressure

Comprehensive studies of X-ray diffraction, oxygen content, superconductivity and Mössbauer effect have been made on Fe_xCu_1−xBa₂YCu₂O_7+y superconductors (0.00≤x≤0.70) synthesized by ambient (AM) and high pressure (HP). Results indicate that all the HP-samples have tetragonal structure, smaller lattice parameter c and unit-cell volume than the AM-samples. The studies of oxygen content, and Mössbauer spectroscopy indicate that the HP-samples have higher oxygen content, carrier concentration and average valence of Fe than the AM-samples. Moreover, for the HP-samples more Fe atoms located in CuO_x chains have fivefold-oxygen coordination. These are important reasons for the enhancement of T_c in the HP-samples.     

水催化脱卤反应:构建每次一个水分子的纳米化学反应体系(英文)

pacc:8240,8760E Acombinedexperimentalandtheoretical studyofthephotochemistryofCHBr3inpurewa terandinacetonitrile/watermixedsolventsisre portedthatelucidatesthereactionsandmecha nismsresponsibleforthephotochemicalconver sionofthehalogenatomsinCHBr3intothre…     

Numerical simulation of the flow field in a reactor for titanium dioxide production

A physicochemical and fluid dynamic model is formulated for the numerical simulation of the flow field in a reactor for titanium dioxide production, the turbulence motion is described by theKε equation, the governing equations are solved by the SIMPLER algorithm devised by Partankar and Spalding. The velocity, tmperature and concentration fields are obtained for three cases: A) with chemical reaction and thermal insulation on the walls; B) with chemical reaction and wall temperature is 450K; C) without chemical reaction and thermal insulation on the walls, and the physicochemical numerical simulation for the titanium dioxide production has been done. The results of the paper can be used as a theoretical guide for the engineers in the design of such reactors.     

薄膜电致发光瞬态过程的物理模型及定量计算

本文利用桥式平衡电路及Sawyer-Towre电路系统地测量了薄膜电致发光(TFEL)器件的损耗电流波形,发光亮度波形及电荷电压回线.在实验基础上建立了TFEL电子传输过程的物理模型和等效电路,由克希霍夫定律可建立激活层的瞬态电压及电流的微分方程,由此导出损耗电流波形,发光亮度波形及Q-V回线的数学表达式.利用计算机模拟将计算结果与实验进行比较,利用四个调节参数即得到与实验相当好的拟合.     

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.     

Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.