Second harmonic magnetoacoustic responses of magnetic nanoparticles in magnetoacoustic tomography with magnetic induction

Due to the unique magnetic, mechanical and thermal properties, magnetic nanoparticles(MNPs) have comprehensive applications as the contrast and therapeutic agents in biomedical imaging and magnetic hyperthermia. The linear and nonlinear magnetoacoustic responses determined by the magnetic properties of MNPs have attracted more and more attention in biomedical engineering. By considering the relaxation time of MNPs, we derive the formulae of second harmonic magnetoacoustic responses(2H-MARs) for a cylindrical MNP solution model based on the mechanical oscillations of MNPs in magnetoacoustic tomography with magnetic induction(MAT-MI). It is proved that only the second harmonic magnetoacoustic oscillations can be generated by MNPs under an alternating magnetic excitation. The acoustic pressure of the 2H-MAR is proportional to the square of the magnetic field intensity and exhibits a linear increase with the concentration of MNPs. Numerical simulations of the 2H-MAR are confirmed by the experimental measurements for various magnetic field intensities and solution concentrations using a laser vibrometer. The favorable results demonstrate the feasibility of the harmonic measurements without the fundamental interference of the electromagnetic excitation, and suggest a new harmonic imaging strategy of MAT-MI for MNPs with enhanced spatial resolution and improved signal-to-noise ratio in biomedical applications.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Simulation study on cooperation behaviors and crowd dynamics in pedestrian evacuation

Pedestrian evacuation is actually a process of behavioral evolution. Interaction behaviors between pedestrians affect not only the evolution of their cooperation strategy, but also their evacuation paths-scheduling and dynamics features. The existence of interaction behaviors and cooperation evolution is therefore critical for pedestrian evacuation. To address this issue, an extended cellular automaton(CA) evacuation model considering the effects of interaction behaviors and cooperation evolution is proposed here. The influence mechanism of the environment factor and interaction behaviors between neighbors on the decision-making of one pedestrian to path scheduling is focused. Average payoffs interacting with neighbors are used to represent the competitive ability of one pedestrian, aiming to solve the conflicts when more than one pedestrian competes for the same position based on a new method. Influences of interaction behaviors, the panic degree and the conflict cost on the evacuation dynamics and cooperation evolution of pedestrians are discussed. Simulation results of the room evacuation show that the interaction behaviors between pedestrians to a certain extent are beneficial to the evacuation efficiency and the formation of cooperation behaviors as well. The increase of conflict cost prolongs the evacuation time. Panic emotions of pedestrians are bad for cooperation behaviors of the crowd and have complex effects on evacuation time. A new self-organization effect is also presented.     

Multicaloric and coupled-caloric effects

The multicaloric effect refers to the thermal response of a solid material driven by simultaneous or sequential application of more than one type of external field.For practical applications,the multicaloric effect is a potentially interesting strategy to improve the efficiency of refrigeration devices.Here,the state of the art in multi-field driven multicaloric effect is reviewed.The phenomenology and fundamental thermodynamics of the multicaloric effect are well established.A number of theoretical and experimental research approaches are covered.At present,the theoretical understanding of the multicaloric effect is thorough.However,due to the limitation of the current experimental technology,the experimental approach is still in progress.All these researches indicated that the thermal response and effective reversibility of multiferroic materials can be improved through multicaloric cycles to overcome the inherent limitations of the physical mechanisms behind single-field-induced caloric effects.Finally,the viewpoint of further developments is presented.     

Spin-exchange relaxation of naturally abundant Rb in a K-Rb-~(21)Ne self-compensated atomic comagnetometer

The total effective spin-exchange relaxation of naturally abundant Rb in a K–Rb–21Ne comagnetometer is analyzed,and the results show that the coexistence of 87Rb and 85Rb isotopes in the same volume can lead to a large extra spinexchange broadening compared to pure 87Rb.This broadening mainly comes from the contribution of the equivalent reduction in the Rb spin-exchange rate.On this basis,an approximate relaxation model is proposed and experimentally demonstrated to be more accurate than that from a previous work.This study also provides a method for determining the properties of alkali-metal vapor cells.     

Dissipative quantum phase transition in a biased Tavis-Cummings model

We study the dissipative quantum phase transition(QPT)in a biased Tavis–Cummings model consisting of an ensemble of two-level systems(TLSs)interacting with a cavity mode,where the TLSs are pumped by a drive field.In our proposal,we use a dissipative TLS ensemble and an active cavity with effective gain.In the weak drive-field limit,the QPT can occur under the combined actions of the loss and gain of the system.Owing to the active cavity,the QPT behavior can be much differentiated even for a finite strength of the drive field on the TLS ensemble.Also,we propose to implement our scheme based on the dissipative nitrogen-vacancy(NV)centers coupled to an active optical cavity made from the gainmedium-doped silica.Furthermore,we show that the QPT can be measured by probing the transmission spectrum of the cavity embedding the ensemble of the NV centers.     

Improvement of high-frequency properties of Co_2FeSi Heusler films by ultrathin Ru underlayer

Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm.It is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient remains.The result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external damping.As a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.     

Influence of external load on friction coefficient of Fe-polytetrafluoroethylene

A coarse-grained molecular dynamics simulation model was developed in this study to investigate the friction process occurring between Fe and polytetrafluoroethylene(PTFE).We investigated the effect of an external load on the friction coefficient of Fe–PTFE using the molecular dynamics simulations and experimental methods.The simulation results show that the friction coefficient decreases with the external load increasing,which is in a good agreement with the experimental results.The high external load could result in a larger contact area between the Fe and PTFE layers,severer springback as a consequence of the deformed PTFE molecules,and faster motion of the PTFE molecules,thereby affecting the friction force and normal force during friction and consequently varying the friction coefficient.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.