Second order three boundary value problem in Banach spaces via Henstock and Henstock-Kurzweil-Pettis integral

Existence theorems and some properties of solutions set of three boundary value second order differential equations and inclusions in Banach spaces are obtained under Henstock, respectively Henstock-Kurzweil-Pettis integrability assumptions. Our results extend those obtained by Azzam, Castaing and Thibault in the Bochner integrability setting and in the Pettis integrability one. The continuity of the (unique) solution with respect to a parameter in the single-valued case is also studied.     

On some periodic solutions of singularly perturbed parabolic equations

We present results from the theory of singular perturbations and, in particular, from a new branch of this theory (contrast alternating-type structures). __________ Translated from Ukrains’kyi Matematychnyi Zhurnal, Vol. 59, No. 3, pp. 359–369, March, 2007.     

Evaluation of the Lazarus-Leblond constants in the asymptotic model of the interfacial wavy crack

The paper addresses the problem of a semi-infinite plane crack along the interface between two isotropic half-spaces. Two methods of solution have been considered in the past: Lazarus and Leblond [1998a. Three-dimensional crack-face weight functions for the semi-infinite interface crack-I: variation of the stress intensity factors due to some small perturbation of the crack front. J. Mech. Phys. Solids 46, 489-511, 1998b. Three-dimensional crack-face weight functions for the semi-infinite interface crack-II: integrodifferential equations on the weight functions and resolution J. Mech. Phys. Solids 46, 513-536] applied the “special” method by Bueckner [1987. Weight functions and fundamental fields for the penny-shaped and the half-plane crack in three space. Int. J. Solids Struct. 23, 57-93] and found the expression of the variation of the stress intensity factors for a wavy crack without solving the complete elasticity problem; their solution is expressed in terms of the physical variables, and it involves five constants whose analytical representation was unknown; on the other hand, the “general” solution to the problem has been recently addressed by Bercial-Velez et al. [2005. High-order asymptotics and perturbation problems for 3D interfacial cracks. J. Mech. Phys. Solids 53, 1128-1162], using a Wiener-Hopf analysis and singular asymptotics near the crack front.The main goal of the present paper is to complete the solution to the problem by providing the connection between the two methods. This is done by constructing an integral representation for Lazarus-Leblond's weight functions and by deriving the closed form representations of Lazarus-Leblond's constants.     

Oscillation of certain partial difference equations

In this paper we consider a class of nonlinear delay partial difference equations and a class of linear delay partial difference equations with variable coefficients, which may change sign. We obtain oscillation criteria for these equations. There are no results for the oscillation of these equations up to now.     

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶–10⁸ cm^?2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶–10⁸ cm^?2. It is also found that some deep electron and hole traps are related to dislocations.     

Features of polystyrene synthesis in the presence of (diphenylbutadiene)tricarbonylchromium

Features of radical polymerization of styrene in the presence of (diphenylbutadiene)tricarbonylchromium were studied.     

The adsorption of toluene on V-Sb oxides. Theoretical aspects

Toluene adsorption reactions on the (1 1 0) surface of VSbO₄ have been analyzed following the changes in the electronic structure of the hydrocarbon molecule and metal cation sites of the oxide using the Just Another Extended Hückel Molecular Orbital Program (JAEHMOP) code. The bonding character of these interactions has also been studied in the same theoretical framework. The calculations indicate that the exothermic hydrocarbon parallel interaction on Sb-V sites results in the weakening of one of the C-H bonds of the methyl fragment. This leads to a H-abstraction that involves the participation of a Sb-cation. Both methyl and phenyl fragments decrease their electronic population and so does the V-cation site. Most of these electrons are transferred to other V atoms in the bulk solid. As a result the LUMO of the toluene-oxide system fully populates. The analysis reveals that methyl-Sb bonding interactions mainly involve C_2px and H_1s orbitals with Sb_5s orbital, while non-bonding phenyl-V interactions involve C_2px orbitals with V_3dx²−y² orbital. This last interaction facilitates the desorption of the benzyl species after H-abstraction.     

Nitroxide‐mediated radical polymerization in miniemulsion: Bimolecular termination in monomer‐free model systems

Bimolecular termination in nitroxide‐mediated radical polymerization in miniemulsion has been investigated through the heating of a polystyrene–2,2,6,6‐tetramethylpiperidinyl‐1‐oxy macroinitiator and its 4‐hydroxy‐2,2,6,6‐tetramethylpiperidinyl‐1‐oxy analogue in an aqueous toluene dispersion with sodium dodecyl benzenesulfonate as a surfactant at 125 °C. The level of bimolecular termination by combination, evaluated from the high‐molecular‐weight shoulder, was higher in miniemulsion than in solution and increased with decreasing particle size. Quantitative analysis revealed that these results cannot be rationalized solely by nitroxide partitioning to the aqueous phase. The results are explained by an interface effect, by which nitroxide is adsorbed or located at the aqueous–organic interface. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4995–5004, 2007     

深能级杂质对光导半导体开关非线性特性的影响

建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.