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951.
电动势是中专物理教材“恒定电流”中的一个重点概念,又是学生难以理解的难点内容.电动势描述了电源内部非静电力移动电荷做功的能力大小,在教学中学生对电源、电动势、电压之间的关系很容易混淆,对电源能持续向外供电的原因不理解,特别是对电源内部由于非静电力搬移电荷做功,使电源两极间保持恒定电势差的事实无法体会,同时,也很难利用实验做到让学生直观、形象地认识,因此形成了教学难点.鉴  相似文献   
952.
In this work, we have studied thermal stability of nanoscale Ag metallization and its contact with CoSi2 in heat-treated Ag(50 nm)/W(10 nm)/Co(10 nm)/Si(1 0 0) multilayer fabricated by sputtering method. To evaluate thermal stability of the systems, heat-treatment was performed from 300 to 900 °C in an N2 ambient for 30 min. All the samples were analyzed by four-point-probe sheet resistance measurement (Rs), Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), and atomic force microscopy (AFM). Based on our data analysis, no interdiffiusion, phase formation, and Rs variation was observed up to 500 °C in which the Ag layer showed a (1 1 1) preferred crystallographic orientation with a smooth surface and Rs of about 1 Ω/□. At 600 °C, a sharp increase of Rs value was occurred due to initiation of surface agglomeration, WSi2 formation, and interdiffusion between the layers. Using XRD spectra, CoSi2 formed at the Co/Si interface preventing W silicide formation at 750 and 800 °C. Meantime, RBS analysis showed that in this temperature range, the W acts as a cap layer, so that we have obtained a W encapsulated Ag/CoSi2 contact with a smooth surface. At 900 °C, the CoSi2 layer decomposed and the layers totally mixed. Therefore, we have shown that in Ag/W/Co/Si(1 0 0) multilayer, the Ag nano-layer is thermally stable up to 500 °C, and formation of W-capped Ag/CoSi2 contact with Rs of 2 Ω/□ has been occurred at 750-800 °C.  相似文献   
953.
We consider, both theoretically and experimentally, the excitation and detection of the localized quasimodes (resonances) in an open dissipative 1D random system. We show that, even though the amplitude of transmission drops dramatically so that it cannot be observed in the presence of small losses, resonances are still clearly exhibited in reflection. Surprisingly, small losses essentially improve conditions for the detection of resonances in reflection as compared with the lossless case. An algorithm is proposed and tested to retrieve sample parameters and resonance characteristics inside the random system exclusively from reflection measurements.  相似文献   
954.
Sonolysis of aqueous solutions of n-alkyl anionic surfactants results in the formation of secondary carbon-centered radicals (-*CH-). The yield of -*CH- depends on the bulk surfactant concentration up to a maximum attainable radical yield (the 'plateau yield') where an increasing surfactant concentration (below the critical micelle concentration) no longer affects the -*CH- yield. In an earlier study it was found that the ratio of -*CH- detected following sonolysis of aqueous solutions of sodium pentane sulfonate (SPSo) to that of sodium dodecyl sulfate (SDS) (i.e. CH(SPSo)/CH(SDS)) depended on the frequency of sonolysis, but was independent of the ultrasound intensity, at the plateau concentrations [J.Z. Sostaric, P. Riesz, Adsorption of surfactants at the gas/solution interface of cavitation bubbles: an ultrasound intensity-independent frequency effect in sonochemistry, J. Phys. Chem. B 106 (2002) 12537-12548]. In the current study, it was found that the CH(SPSo)/CH(SDS) ratio depended only on the ultrasound frequency and did not depend on the geometry of the ultrasound exposure apparatus considered.  相似文献   
955.
报道在脉宽50fs—22ps,波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法,实验测量了激发空气电离所需的阈值激光强度.结果表明,当激光脉冲宽度从50fs增加到22ps时,阈值光强Ith从8.7×1014W/cm2下降到2.7×1013W/cm2Ith经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p  相似文献   
956.
We report a new long-term interferometric stabilization scheme for a delay line to be used for pump–probe spectroscopy on the attosecond time scale. A separate interferometer with a He–Ne laser beam is used to stabilize the delay line with respect to a slow drift in the optical delay induced mainly by ambient temperature changes in the laboratory. The power of the stabilization scheme is demonstrated with the characterization of an attosecond pulse train in the extreme ultraviolet formed through high order harmonic generation of Ti:sapphire laser radiation. We use the RABBITT technique for the attosecond pulse-train characterization in a reaction microscope employed here for photoelectron–photoion-coincidence spectroscopy. PACS 42.65.Ky; 42.65.Re; 07.60.Ly; 07.81.+a; 32.80.Fb  相似文献   
957.
Extensive experimental results are presented to reveal the relaxations of polystyrene surface deformed by rubbing with a velvet cloth. We found that surface topographic features, such as ditches and ridges created by rubbing, relax at temperatures at about 20° C below the bulk glass transition temperature of the polystyrene for a molecular weight of 442 kg/mol, even though we estimate the Laplace Pressure driving the relaxation to be 1/500 of the yield limit. The relaxation is independent of the thermal history before the rubbing process, and post rubbing thermal history below 55° C . In other words, physical-aging processes at 23° C for up to 7 days and at 50° C for 2 days, which would have drastic effects on the relaxations of bulk polymers, have little effects on the relaxations of rubbed surfaces. This is consistent with the mobility enhancement in the surface layer previously reported in the literature.  相似文献   
958.
The channeling effect of low energy ions along the crystallographic axes and planes of NaI(Tl) crystals is discussed in the framework of corollary investigations on WIMP dark matter candidates. In fact, the modeling of this existing effect implies a more complex evaluation of the luminosity yield for low energy recoiling Na and I ions. In the present paper related phenomenological arguments are developed and possible implications are discussed at some extent. PACS 95.35.+d  相似文献   
959.
Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures were investigated by X-ray diffraction and Hall effect measurements. AlN passivation induced an additional compressive stress in an AlGaN barrier layer instead of an additional tensile stress induced by Si3N4 passivation. The change of strain after passivation contributes in a relatively small proportion to the variation of the carrier concentration in AlGaN/GaN heterostructures compared with the contribution from passivation of surface traps. The results from Hall effect measurements show that the AlN passivation layer has a better effect on passivation of deep levels than the Si3N4 film and also results in a remarkable increase in mobility of the two-dimensional electron gas. PACS 73.40.Kp; 71.55.Eq; 81.65.Rv; 81.05.Ea; 61.05.cp  相似文献   
960.
We have theoretically investigated the atomic structure, magnetic behaviour, and electronic properties of Mn adsorbates on hydrogen passivated self-organised Bi nanolines on the Si(0 0 1)surface. It is found that the most stable geometry for monolayer (ML) coverage of Mn is just underneath the first Si(0 0 1) surface layer. The Mn atoms in the optimised configuration are seven-fold coordinated with their neighbouring Si atoms. Total energy calculations suggest that the Mn adsorbates form a degenerate state of ferromagnetic and anti-ferromagnetic lines parallel and adjacent to the self-assembled Bi lines. The density functional band structure calculation within the local-spin density approximation shows that the ferromagnetic system behaves like a metal in both spin channels. On the other side, the anti-ferromagnetic phase exhibits a half-metallic phenomenon with semiconducting character for the majority spin channel and semi-metallic character for the minority spin channel.  相似文献   
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