1.3 GHz超导腔磁通排出效应研究

设计并搭建了一套高精度的磁场测量和补偿系统,并结合中国科学院高能物理研究所（IHEP）的2K超导腔垂直测试平台对1.3 GHz 单加速间隙超导腔的磁通排出效应开展了实验研究：利用研制的磁场测量和补偿系统能够精密地测量超导腔赤道位置磁场,并能够将磁场补偿至小于5.0×10⁻⁸ T;并对超导腔不同表面温度梯度下的磁通排出效应进行了测量分析;对钉扎了磁场的超导腔进行了射频性能测试,研究了超导腔电阻对磁通钉扎的敏感度,以及在不同电场梯度下超导腔的表面电阻变化情况。结果表明,研制的高精度磁场测量和补偿系统能够满足超导腔磁通排出研究的需求;高的超导腔表面温度梯度有利于磁通的排出;磁通钉扎电阻的敏感度随着加速电场梯度的增加而增大,导致超导腔的性能下降。此实验研究也为后续超导腔的研制奠定了一定基础。     

离子能量分析器测量特性的仿真研究

针对空间等离子体及其模拟环境、空间原子氧及其模拟环境对离子能谱测量的需要,利用仿真软件COMSOL,对离子能量分析器的低能离子测量特性进行了仿真研究。介绍了离子能量分析器的工作原理,对离子能谱测量过程进行了公式推导。通过对三种待选仪器设计方案进行离子透过率仿真分析,确定了一种较优的仪器设计方案。多种离子温度下的误差分析结果也表明,该设计方案能够较为准确地测量离子能量分布。分析了电场畸变、等离子鞘层、栅网对齐方式和离子温度对测量结果的影响,根据仿真结果对一些仿真实验现象做出了合理的解释。     

Spin-exchange relaxation of naturally abundant Rb in a K-Rb-~(21)Ne self-compensated atomic comagnetometer

The total effective spin-exchange relaxation of naturally abundant Rb in a K–Rb–21Ne comagnetometer is analyzed,and the results show that the coexistence of 87Rb and 85Rb isotopes in the same volume can lead to a large extra spinexchange broadening compared to pure 87Rb.This broadening mainly comes from the contribution of the equivalent reduction in the Rb spin-exchange rate.On this basis,an approximate relaxation model is proposed and experimentally demonstrated to be more accurate than that from a previous work.This study also provides a method for determining the properties of alkali-metal vapor cells.     

基于石墨烯/石墨烯卷轴复合薄膜高灵敏度柔性压力传感器

一维导电材料例如纳米线,大量应用于柔性压力传感器中. 但是一维材料和基底之间接触时相互作用力较弱,使得传感器灵敏度、响应时间、和循环寿命等性能指标有待进一步提高. 针对这些问题,设计了石墨烯/石墨烯卷轴多分子层复合薄膜作为传感器导电层. 石墨烯卷轴具有一维结构,而石墨烯的二维结构可以牢固地固定卷轴,以确保高导电性复合薄膜与基底之间的粘附性,同时整体结构的导电通道得到了增加. 由于一维和二维结构的协同效应,实现了应变灵敏度系数3.5 kPa^-1、 响应时间小于50 ms、能够稳定工作1000次以上的压阻传感器.     

光锥与TDI-CCD耦合监控中测试目标的一种实现方法

为了给光锥与时间延迟积分电荷耦合器件耦合监控装置提供有效的被测运动条纹,分析了传统推扫成像实验装置的不足之处,设计了电子显示目标滚屏运动装置.采用光学相机对印刷条纹静止成像,并用TDI-CCD数字相机对监视器屏幕上的运动条纹动态成像.实验结果表明,该方案解决了高分辨率的鉴别率图样无法在监视器或投影仪上精确显示的困难.与传统的实验室模拟装置相比,该方案提高了鉴别率条纹的运动稳定性,减小了条纹运动速率与TDI-CCD扫描行频间的失配误差,不仅能够对耦合过程实施监控,而且还能用于耦合系统的像质评价.     

全相关(TOCSY)序列在多肽分析中的应用

TOCSY可提供自旋网络中全部质子的接力信息,是RELAY的新发展,它特别适用于具有若干独立自旋系统的大分子.本文在同核和异核相关实验中均用MLEV-17序列进行全面相关,并对两种多肽进行了分析.     

The giant enhancement of Fano-type resonance in a gain-assisted silicon slab array

Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs. The Fano mode is characterized by its ultra-narrow asymmetric spectrum, different from that of a pure electric or magnetic dipole. The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements.     

Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.     

Energy transfer channels at the diffraction-anomaly in transparent gratings and applications in sensors

Diffraction anomaly corresponds to an energy re-distribution in the reflected and transmitted light beams and in different diffraction orders of a grating, which leads to sharp modulations on the transmission and reflection spectra. In gratings sitting on a transparent substrate, this portion of the energy is actually transferred to channels separated from the reflected and transmitted beams. These channels are based on multiple degenerated diffraction processes at the same wavelength as the diffraction anomaly. The spectroscopic response of these channels is sensitive to the change in the environmental refractive index and can be utilized in sensor devices.