Maximal Cluster Sets of L-Analytic Functions Along Arbitrary Curves

Let Ώ be a domain in the N-dimensional real space, let L be an elliptic differential operator, and let (T_n) be a sequence whose members belong to a certain class of operators defined on the space of L-analytic functions on Ώ. This paper establishes the existence of a dense linear manifold of L-analytic functions all of whose nonzero members have maximal cluster sets under the action of every T_n along any curve ending at the boundary of Ώ such that its closure does not contain any component of the boundary. The above class contains all partial differentiation operators ∂^α, hence the statement extends earlier results due to Boivin, Gauthier, and Paramonov, and due to the first, third, and fourth authors.     

Generation of red light at 660 nm by frequency doubling a Nd:YAG laser with periodically-poled stoichiometric LiTaO<Subscript>3</Subscript>

High power red light was generated from a periodically-poled stoichiometric LiTaO₃ (PPSLT) by single-pass frequency doubling of a diode-side-pumped, Q-switched Nd:YAG laser at 1319 nm. An average power of 2.4 W of the 660 nm red light was obtained at the fundamental power of ∼5.4 W with the conversion efficiency up to 44.4% and with low fluctuation down to 2%. The high efficiency and stability at the red output indicate that it is a practical method to construct a reliable compact red laser. PACS 42.70.Mp; 42.79.Nv; 42.55.Xi     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Growth of InAs nanostructures on InP using atomic-force nanolithography

Atomic-force nanolithography was used to control the nucleation sites of InAs nanostructures on InP substrates. Indentations with a wide range of dimensions were produced on InP. InAs nanostructures were selectively grown by metal organic vapor phase epitaxy. It is shown that the number of active nucleation sites depends on the normal force applied during nanoindentation. Crystalline defects introduced by nanoindentation are shown to be nucleation sites for these nanostructures. The presence of screw dislocations within the grown nanostructures further supports this observation. PACS 81.07.-b; 68.37.Ps; 81.16.Nd     

Correlation of Plasma Sprayed Coating Deposition Efficiency with Volume Flux Measurements by Phase Doppler Anemometry (PDA)

The use of phase-Doppler anemometry (PDA) to characterize the detail in-flight plasma sprayed particle behavior has been demonstrated previously [Ma et al. Plasma Chem Plasma Process 24(1):85; 25(1):56] The present articles shows further that a direct relationship may exist between the PDA measured particle volume flux and the coating microstructure and deposition efficiency (DE). In the situation when the precise particle temperature information is not available, the PDA measured particle volume flux may provide an alternative to predict quantitatively the variation of the coating microstructure and the DE. By monitoring the in-flight particle volume flux variations, instead of the particle velocity, size and temperature individually and simultaneously, the optimal settings of the plasma spraying parameters may also be determined conveniently. However, it is noted that the effective applications of such approach depend largely on the particle surface morphology and the pre-determination of the particle size range.     

<Emphasis Type="Italic">Comment on</Emphasis>¶Low temperature specific heat of blue bronze K <Emphasis Type="Bold">0.30</Emphasis>MoO <Emphasis Type="Bold">3</Emphasis>, by J. Odin,J.C. Lasjaunias,K. Biljaković, K. Hasselbach,and P. Monceau

Eur. Phys. J. B 24, 315 (2001) Here we comment on a recently published paper on the presence of a phason contribution in the low temperature heat capacity data of the charge-density-wave compounds K_0.3MoO₃ and (TaSe₄)₂I. We have shown that the anomaly in the C _P / T ³ data reported by Odin et al. is straightforwardly interpreted in terms of low energy phonon modes resulting from the peculiar topology of these compounds. Received 21 February 2002 Published online 19 July 2002     

Simulation of electron bunch generation by an ultrashort-pulse high-intensity laser-driven wakefield

Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.     

Dynamics of kinks in biological membranes

kinks created in a biological membrane by the interaction with a movable bead. We arrive at the evolution equations for both the bead and the membrane, whence we conclude that the force exerted on the bead by a fixed membrane points in the direction along which the curvature of the membrane is more concentrated. This is the first step towards understanding the basic mechanism behind the dynamics of protein aggregation which takes place on biological membranes. Received November 6, 2001 / Published online February 4, 2002