差动式光纤微小角度传感器

采用双面反射调制技术,设计了双光纤差动式光纤微小角度传感器.动态范图±10’,分辨率1",精度可达3".可用于各种非接触微小角度的测量场合.     

Computer Simulation of a 3-D Sensing System with Structured Illumination

A computer simulation system of three-dimensional sensing with structured illumination is presented. It includes the generation of deformed fringe patterns from 3-D shapes and the reconstruction of 3-D shapes, conversely. Some experimental results of the deformed fringe pattern and the reconstructed object shapes are presented. We have also discussed the effect of some major system parameters on the measurement results and considered how to correct these parameters according to the measurement result of the standard plane. Using this simulation system, the major system parameters: environmental conditions, measurement accuracy and algorithm evaluation of the 3-D shape measurement system based on PMP, FTP, SPM, etc., can be researched. © 1997 Elsevier Science Ltd. All rights reserved.     

3 GPa熔融盐固体介质三轴高温压力容器的轴压摩擦力标定

 在温度标定和围压标定的基础上,采用轴压循环方法,对3 GPa固体介质三轴高温高压实验系统的轴压摩擦力进行了标定,分析了围压、温度、轴向位移速率、装样方式（盐套类型）等实验条件对轴压摩擦力的影响。结果表明：静摩擦力、挤压摩擦力和滑动摩擦力3种轴压摩擦力对轴向应力的影响不同,其中静摩擦力和挤压摩擦力对轴向应力的影响很小,影响应力精度的主要是滑动摩擦力。静摩擦力及滑动摩擦力与围压正相关;静摩擦力与轴向位移速率正相关,但受其影响较小,滑动摩擦力不受其影响;静摩擦力和滑动摩擦力与温度负相关,并且受其影响较显著;盐套类型对轴压摩擦力的影响较大,当实验条件接近盐套熔点时,轴压摩擦力显著降低,当样品周围的盐套处于熔融状态时,轴压摩擦力最小。基于此,确定了标定轴压摩擦力的具体步骤,并对角闪岩的应力-应变曲线进行了轴压摩擦力标定。对比轴压摩擦力校正前、后的应力-应变曲线发现,经过轴压摩擦力校正的应力-应变曲线能更好地反映样品的实际变形情况。     

Mn（Ⅱ）,Co（Ⅱ）与HSA相互作用的荧光光谱研究

用荧光光谱法研究了生理ｐＨ和等离子点（ｐＨ＝５．３０）时Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）与ＨＳＡ的相互作用。根据Ｆｏｒｓｔｅ非辐射能量转移理论,得到了不同ｐＨ时Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）在ＨＳＡ中的第一强结合位置与Ｔｒｐ－２１４残基间的距离。这一结果远大于文献报道值,根据Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）在ＨＳＡ中的结合部位及ＨＳＡ的畴结构对这一显著差异进行了讨论。     

Spectroscopic Studies of the Stability of Doped Polythiophenes Under Air

Abstract

The stability of the doped state of conductive polythiophenes under air was investigated by the use of Infrared (IR) and UV-visible (UV) spectroscopies. Poly(3-methyl thiophene) doped with BF₃-ethyl ether (BFEE). shows higher stability due to its stereoregularity-chain structure. While the doped polythiophene (PT) degrades easily under the moisture.     

考虑残值变化和消费者低碳偏好的生产定价与销售激励机制

在消费者低碳偏好和产品残值变化下,研究制造商的碳减排、生产及定价联合决策、以及对销售商的销售激励契约设计问题。不同于以往的研究假设残值不变,本文考虑残值依赖于清仓期库存以及碳减排问题。提出委托代理模型,求解模型并从理论上分析残值的变化和碳减排成本对双方决策和收益的影响。研究表明,残值变化率的增加只导致制造商的收益和生产量下降,不影响制造商的碳减排、定价、销售契约及零售商的决策和收益,但碳减排成本将导致制造商的收益和双方决策变量的下降。最后通过算例分析验证了结论,对供应链的运营实践有指导意义。     

MOS结构电离辐射效应模型研究

基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更 关键词： MOS结构 辐射 界面陷阱 氧化层陷阱     

面心立方铁纳米粒子的相变与并合行为的分子动力学研究

本文采用分子动力学模拟结合Finnis-Sinclair多体势研究了面心立方铁纳米粒子在加温过程中的相变与并合行为. 模拟结果表明: 纳米粒子在熔化之前均发生了由面心立方至体心立方的马氏体相变; 大小相等的两纳米粒子在并合之前发生了相对转动; 而大小不等的两纳米粒子在并合过程中并未出现转动, 小纳米粒子倾向于吸附在大纳米粒子上, 并随着温度的升高而熔化, 最终形成更大的纳米粒子. 关键词： 纳米粒子 相变 并合 分子动力学     

应用光纤布喇格光栅传感器监测地下管道腐蚀的新方法研究

地下管线工作环境恶劣,腐蚀是引起它破坏和失效的主要原因之一.本文提出了一种应用光纤光栅传感器监测管道腐蚀的新方法.输送石油和天然气等一些物质的管道内部存在的压力会使管道发生膨胀,进而导致管道外壁产生环向变形.假定管道为无限长,管道内部压力导致的管道外壁轴向应变可忽略不计,当管线发生腐蚀时,会导致管壁变薄,管道内部的压力又可以看作基本不变,这样就会增大管道外壁的环向应变.当管道内部压力保持恒定时,管道壁厚与应变之间存在一定的反比例关系,本文方法就是将封装好的光纤光栅传感器粘贴在管道外壁,通过监测外壁环向变形来判断管道腐蚀的情况和程度.通过理论值、模拟值和试验值三者的对比分析来说明了这种新方法是可行的,并且值得被广泛应用,为埋地管道的防灾减灾提供了一种对策.     

Power dissipation characteristics of great power and super high speed semiconductor switch

The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.