锑掺杂氧化锡粉体的太赫兹透射特性

以SnCl45H2O和SbCl3为原料,采用液相化学共沉淀法制备锑掺杂氧化锡（ATO）粉体。分析了不同Sb掺杂质量分数条件下,ATO粉体的禁带宽度变化,并对材料在0.2~1.6 THz波段的透射时域和频域谱,以及吸收和屏蔽参数进行了对比分析。结果表明,ATO粉体的禁带宽度随着Sb掺杂量的增加先减小后增大;同时,ATO粉体对THz波的吸收系数随着Sb掺杂量的增加先增大后减小,当Sb掺杂质量分数为9%时,ATO的吸收系数在1.25 THz处达到最大值156.5 cm-1,屏蔽效能在1.24~1.60 THz范围内最高达到45.0 dB。     

X波段高功率微波选模定向耦合器

高功率、长脉冲是高功率微波技术发展的趋势,提高微波器件的功率容量成为一项重要的任务,使用过模器件可以有效提高微波源的功率容量,然而却会带来微波源中同时存在多种模式的问题。为了识别一个X波段长脉冲过模高功率微波源的输出主模TM01模式,设计了一种在线选模定向耦合器,进行了理论分析和模拟优化设计。当频率范围为9.2~9.6 GHz时,模拟结果显示该选模耦合器对TM01模的耦合度为-54 dB,在400 MHz带宽内定向性大于35 dB,对TM02模的抑制度大于15 dB,功率容量可达到3 GW以上。     

回旋加速器束测探头感生放射性实验研究

基于束流沉积法测量回旋加速器内部束流参数将在束测探头上产生感生放射性污染,从而对加速器调束工作人员带来不必要的辐射危害。采用AGM-6型监测仪对探头感生放射性进行在线测量,通过测量不同半径处探头受辐射后的空气比释动能率,间接反映探头感生放射性的强弱和危害。研究结果表明,在束流调试实验中,应尽量降低馈入高频的占空比;探头测量后冷却2~3 h取出,则不需要考虑测量探头辐照后的残留感生放射性的危害。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

Quantum Correlations Induced by Local von Neumann Measurement

We study the total quantum correlation, semiquantum correlation and joint quantum correlation induced by local von Neumann measurement in bipartite system. We analyze the properties of these quantum correlations and obtain analytical formula for pure states. The experimental witness for these quantum correlations is further provided and the significance of these quantum correlations is discussed in the context of local distinguishability of quantum states.     

Designing shielded radio-frequency phased-array coils for magnetic resonance imaging

In this paper, an approach to the design of shielded radio-frequency (RF) phased-array coils for magnetic resonance imaging (MRI) is proposed. The target field method is used to find current densities distributed on primary and shield coils. The stream function technique is used to discretize current densities and to obtain the winding patterns of the coils. The corresponding highly ill-conditioned integral equation is solved by the Tikhonov regularization with a penalty function related to the minimum curvature. To balance the simplicity and smoothness with the homogeneity of the magnetic field of the coil’s winding pattern, the selection of a penalty factor is discussed in detail.     

Calculation of the photoelectron spectra under a scaling transform

By solving the time-dependent Schro¨dinger equation, the dependence of photoelectron energy spectra on the binding energy of targets, wavelength and the intensity of laser pulse is exhibited and a scaling law of kinetic energy spectra of both the direct and the rescattered photoelectrons is concluded. The scaling law provides a convenient tool to determine the equivalent photoionization process of various atoms or molecules in various laser fields. The verification of the scaling law by independent methods provides incontestable support to the validity of the scaling law.     

Nonlinear optical behaviors in a silver nanoparticle array at different wavelengths

The optical nonlinearities of an Ag nanoparticle array are investigated by performing Z-scan measurements at the selected wavelengths (400, 600, 650, and 800 nm). The nonlinear refraction index in the resonant region (around 400 nm) exhibits a significant enhancement by two orders compared with that in the off-resonant region (around 800 nm)), and exhibits an sign alternation of the resonant nonlinear absorption, which results in a negligible nonlinear absorption at a certain excitation intensity. Moreover, a low degree of nonlinear absorption was measured at the edges of the resonant region (600 and 650 nm), which is attributed to the competition of the saturated absorption and the two-photon absorption processes.     

Optimization of highly nonlinear dispersion-flattened photonic crystal fiber for supercontinuum generation

A simple type of photonic crystal fiber (PCF) for supercontinuum generation is proposed for the first time. The proposed PCF is composed of a solid silica core and a cladding with square lattice uniform elliptical air holes, which offers not only a large nonlinear coefficient but also a high birefringence and low leakage losses. The PCF with nonlinear coefficient as large as 46 W 1 · km-1 at the wavelength of 1.55 μm and a total dispersion as low as ±2.5 ps · nm-1 · km-1 over an ultra-broad waveband range of the S-C-L band (wavelength from 1.46 μm to 1.625 μm) is optimized by adjusting its structure parameter, such as the lattice constant Λ , the air-filling fraction f , and the air-hole ellipticity η. The novel PCF with ultra-flattened dispersion, highly nonlinear coefficient, and nearly zero negative dispersion slope will offer a possibility of efficient super-continuum generation in telecommunication windows using a few ps pulses.     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.