Estimation of luminescence lifetime in frequency domain

Absorption is the origin of luminescence. But it must be noticed that the lifetime of luminescence might reversely influence the rate of absorption. In this paper, it is reported that the luminescence intensity of copper and manganese changes with the driving frequency at constant voltage.The variation of luminescent intensity depends only on the lifetime of luminescence but not on the type of quenching or other factors. Generally the rate of absorption is dominantly determined by the material property and the lifetime of luminescence centres, the absorption of shorter lifetime centre will be larger than that of the longer lifetime centre at the same excited condition.     

Time-resolved measurement of atomic emission enhancement by fs--ns dual-pulsed laser-induced breakdown spectroscopy

Time-resolved measurement of atomic emission enhancement is performed by using a 500-fs KrF laser pulse incident upon a high density supersonic O_{2} gas jet, synchronized with an orthogonal ns frequency-doubled Nd:YAG laser pulse. The ultra-short pulse serves as an igniter of the gas jet, and the subsequent ns-laser pulse significantly enhances the atomic emission. Analysis shows that the contributions to the enhancement effect are made mainly by the bremsstrahlung radiation and cascade ionization.     

菌紫质薄膜光致折射率变化的理论计算和实验测量

基因改性细菌视紫红质BR-D96N由于M态寿命的延长而具有显著的光致变色特性.根据Kramers-Kronig变换关系,样品吸收光谱的变化会引起样品折射率的变化.本文首先从实验上测量了BR-D96N薄膜样品在光激发前后的吸收光谱,然后根据Kramers-Kronig变换关系,理论计算了对应此光致变色光谱变化的光致折射率变化光谱.实验上为了直接测量样品的光致折射率变化,采用Michelson干涉方法测量BR-D96N薄膜在不同探测波长下的光致折射率变化量,并与理论计算曲线进行了比较.     

Hydrogen dissociation on high-temperature tungsten

H₂ dissociation on polycrystalline tungsten is measured from 1700 to 3000 K using the filament temperature (T) change and a normalized H-atom density at the chamber surface. The dissociation probability per H₂ filament collision (P_diss) saturates at 0.40 at high T and has a 2.25 ± 0.05 eV apparent activation energy when P_diss ? 1. This activation energy is consistent with prior data and models, but the H₂ pressure dependence is not. P_diss is independent of the H₂ pressure for this entire T range and the 1-85 mTorr pressure range studied, contradicting the primary model that has been used to explain H₂ dissociation on tungsten and other metals. We show that some apparently contradictory prior measurements are actually consistent with our observations and with each other, once this pressure dependence of P_diss is recognized.     

多子阵子空间拟合波达方向估计

提出了考虑阵元互耦的子空间拟合波达方向估计方法。用一带状、对称Toeplitz矩阵对均匀线阵的互耦矩阵建模。根据互耦矩阵自由度,去除部分两边阵元,研究了子空间拟合算法中ESPRIT算法的理论性能。在大快拍的情况下,均匀线阵的MCLS-ESPRIT算法的角度估计误差是一个零均值的联合高斯分布,同时给出了分布的协方差表达式。由方差的数值计算可知,在阵元数和信源数确定的情况下,存在估计标准差最小的子阵;与不存在互耦的理想情况相比,除了估计标准差少许增加外,性能接近。本文的方法已应用于高分辨率测深侧扫声呐,获得了好结果。在声呐阵阵元数增加的条件下,用本文的方法,能抑制均匀线阵的互耦的影响。     

ZnO/A1lN/Si(111)薄膜的外延生长和性能研究

用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜.引入低温AlN缓冲层以阻止衬底氧化、缓解热失配和晶格失配.薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及AlN(000l)的衍射峰.ZnO/AlN/Si(111)薄膜C方向晶格常量为0.5195 nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460"和1105";干涉显微镜观察其表面有微裂纹,裂纹密度为20 cm-1;3 μm×3μm范围的原子力显微镜均方根粗糙度为1.5 nm激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h.低温10 K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线.所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量.     

不同波长激发下YLiF_4∶Er~(3+),Tm~(3+),Yb~(3+)的发光

水热法合成了YL iF4∶Er3 ,Tm3 ,Yb3 ,其中Er3 、Yb3 和Tm3 的摩尔分数分别为1%、1.5%和2%。当用355 nm光激发时,其发光为蓝色,峰值位于450 nm,对应于Tm3 的1D2→3F4跃迁。用378 nm激发时,发光为绿色,主要发光峰位于552 nm。980 nm光激发时,发光为白色,发光峰分别位于665(651),552(543),484,450 nm处,并在648 nm处还观察到了一个发光峰,其中最强的发射为红光。YL iF4∶Er3 ,Tm3 ,Yb3 的蓝光来源于Tm3 的激发态1G4到基态3H6的跃迁,绿光来源于Er3 的4S3/2和2H11/2到基态4I15/2的跃迁,红光既来源于Tm3 的1G4→3F4的跃迁,也来源于Er3 的4F9/2→4I15/2的跃迁。在上转换发光中,还探测到了紫外光359 nm的发射。监测665 nm得到的激发光谱不同于监测552 nm的激发光谱,在665 nm的激发光谱中出现了对应Tm3 的1G4能级的峰。在双对数曲线中,蓝光484 nm、绿光552 nm和红光665 nm的斜率分别为2.25、2.28和2.21,紫外光359 nm的斜率为2.85。因此在980 nm激发下,蓝光484 nm、绿光552 nm和红光665 nm都是双光子过程,紫外光359 nm的发射是三光子过程。     

KBA显微镜成像系统的成像模拟及X光成像实验的研究

KBA显微镜是一种非轴对称、非共轴的掠入射成像系统。其结构复杂,调节精度要求很高,在实际成像实验操作中难以掌握其成像特性。利用光学设计软件模拟其成像,对系统的调节和成像分析提供有益的参考。利用光学设计软件ZEMAX模拟了KBA显微镜对点源的成像过程,给出了KBA显微镜成像系统的焦深约为1 mm,景深为50 mm左右。并且由模拟可知,掠入射角对成像的影响很大。对像素尺寸约10μm的探测设备,模拟得出KBA成像系统的空间分辨力上限为3μm左右。基于星光Ⅱ装置对周期为20μm的网格靶成像,获得了KBA显微镜较为清晰的X光图像。该项工作为进一步开展掠入射成像系统的研究奠定了基础。     

An Efficient Numerical Model for Planar Spiral Inductor On-Chip

In this paper, a very useful numerical technique has been developed for analyzing the transient characteristics of a planar-spiral inductor on-chip. A locally conformal technique and an alternating-direction implicit scheme are applied to the finite-difference time-domain method. A formulation for solving three dimensional Maxwell’s equations is proposed. Using the proposed method, various parameters of the planar-spiral inductors have been analyzed and an equivalent circuit, which includes frequency-independent circuit elements, has been introduced. Highly computational efficiency is implemented. Numerical results show excellent agreement with the measured data over a wide frequency range.