基于模糊控制的清水池水位控制系统设计

清水池水位控制具有时变、滞后、突发性强等特点,难以准确建立合适的数学模型,为了达到快速维持清水池水位在期望值,避免所有水泵同时启停的目的,提出了一种清水池水位模糊控制的方法,该方法借助于MATLAB软件对控制系统进行了仿真,验证了模糊控制算法在清水池水位控制系统中应用的合理性,并计算出模糊输出控制量表,为确定水泵启停台数提供指导。采用了S7-200 PLC控制器和MCGS组态软件实现了清水池模糊控制系统的程序设计,给出相应的模糊控制PLC程序,并应用于清水池水位控制系统中。结果表明,系统稳定性好,响应速度快,能够较好的满足控制要求。系统将模糊控制理论与实际控制相结合,满足了清水池水位控制的要求,延长了水泵使用寿命,节省电能,为清水池水位自动控制提供借鉴。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导     

Security analysis of a spatiotemporal-chaos-based cryptosystem

An S-box modified one-way coupled map lattice is applied as a chaotic cryptograph. The security of the system is evaluated from various attacks currently used, including those based on error function analysis, statistical property analysis, and known-plaintext and chosen-ciphertext analytical computations. It is found that none of the above attacks can be better than the brute force attack of which the cost is exhaustively quantitated by the key number in the key space. Also, the system has fairly fast encryption (decryption) speed, and has extremely long period for finite-precision computer realization of chaos. It is thus argued that this chaotic cryptosystem can be a hopeful candidate for realistic service of secure communications.     

双偏振结构保偏光纤偏振器的研制

提出了保偏光纤偏振器的一种串联结构,即双偏振结构,报道了研制的结果。并通过对单偏振结构和双偏振结构器件测试结果的比较,得出双偏振结构的保偏光纤偏振器可使器件达到高消光比,并且有稳定的温度特性。     

HSH-carbon: A novel sp2−sp3 carbon allotrope with an ultrawide energy gap

An sp²-sp³ hybrid carbon allotrope named HSH-carbon is proposed by the first-principles calculations. The structure of HSH-carbon can be regarded as a template polymerization of [1.1.1]propellane molecules in a hexagonal lattice, as well as, an AA stacking of recently reported HSH-C₁₀ consisting of carbon trigonal bipyramids. Based on calculations, the stability of this structure is demonstrated in terms of the cohesive energy, phonon dispersion, Born−Huang stability criteria, and ab initio molecular dynamics. HSH-carbon is predicted to be a semiconductor with an indirect energy gap of 3.56 eV at the PBE level or 4.80 eV at the HSE06 level. It is larger than the gap of Si and close to the gap of c-diamond, which indicates HSH-carbon is potentially an ultrawide bandgap semiconductor. The effective masses of carriers in the VB and CB edge are comparable with wide bandgap semiconductors such as GaN and ZnO. The elastic behavior of HSH-carbon such as bulk modulus, Young’s modulus and shear modulus is comparable with that of T-carbon and much smaller than that of c-diamond, which suggests that HSH-carbon would be much easier to be processed than c-diamond in practice.     

Hollow Gaussian beams in strongly nonlocal nonlinear media

The propagation of hollow Gaussian beams in strongly nonlocal nonlinear media is studied in detail.Two analytical expressions are derived.For hollow Gaussian beams,the intensity distribution always evolves periodically.However the second-order moment beam width can keep invariant during propagation if the input power is equal to the critical power.The interaction of two hollow Gaussian beams and the vortical hollow Gaussian beams are also discussed.The vortical hollow Gaussian beams with an appropriate topological charge can keep their shapes invariant during propagation.     

高效液相色谱法测定巴豆油中佛波醇

建立巴豆油中佛波醇（Phorbol）的含量测定方法。用HPLC测定水解后佛波醇的含量,并通过正交法优化巴豆油水解条件。采用Kromasil C₈（4.6mm×250mm,5μm）色谱柱,流动相为甲醇:水=20:80.流速为1.0mL/min.柱温为25℃,检测波长为234nm。在46.8—468μg/mL范围内佛波醇浓度与峰面积线性关系良好.回归方程为y=9820.8x+50238,r=0.9999;回收率为93.16%,RSD为2.73%。巴豆油的优化水解条件:温度20℃,料液比1:8（mL/mL）,水解3h,此条件下佛波醇的产率最高,平均产率为2.41%。所建方法易于操作、结果稳定、重现性好,可用于巴豆油中佛波醇的含量测定。     

光纤微位移法测量固体线膨胀系数

本文绘出了一种金属固体线膨胀系数的测量方法,即采用光纤位移传感器的方法（光纤微位移法）来测量固体的线膨胀系数．测量了黄铜的线胀系数,分别用逐差法和线性回归法处理了实验数据,并与标准值进行了比较．     

空间调制型全Stokes参量偏振成像系统原理及仿真

空间调制型全Stokes参量偏振成像是针对同一目标不同偏振分量的同时探测技术,以双折射晶体作为调制元件,将Stokes参量S0~S3调制在同一幅图像中,只一次采集便可获得包含4个Stokes参量的调制信息。分析空间调制型全Stokes偏振成像系统的探测原理和数学模型。阐明重构偏振图像S0~S3的理论依据,并分析了系统参数的选择对图像重构效果的影响。根据实际系统参数,进行数值仿真模拟成像过程,获取调制图像,使用一种简单的频域解调算法,重构出S0~S3的4幅偏振图像,得到比较满意的重构效果,不仅验证了方案的可行性,同时为仪器设计或器件选型提供参考。