一株嗜温高效产氢细菌Clostridium sp.08-1的分离鉴定与产氢特征

从10L连续搅拌式罐式反应器(CSTR)中分离得到1株嗜温高效产氢菌株08-1.根据菌株的形态特征和16S rDNA序列结果分析,初步鉴定菌株08-1属于Clostridium sp..同时还进一步研究了温度、pH值控制、底物浓度和种类对菌株08-1产氢的影响.结果表明.该菌株更适合利用蔗糖或成分复杂的生物质木薯粉以及废弃物厨余垃圾生长及产氢,最适产氢温度为40℃,产氢系统pH值控制在5.5时获得最大产氢量.在间歇发酵中,蔗糖浓度为20 g/L,控制温度40℃,pH值5.5,搅拌速度100 r/min时实现最大产氢速率为245 mL·(L·h)~(-1),最大产氢量达到3.06 mol.该菌株在生物制氢中具有潜在的应用价值.     

SIMULATION OF OCCUPATION FUNCTION FOR THERMALLY STIMULATED CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS

The occupation functions for the general condition f(E,T), for the high field approx-imation (HTSC) f_H(E,T) and for the steady state photoconductivity (SSPC) f_P(E,T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been inves-tigated. It was found that the occupation function f(E,T) in TSC is in excellent agreement with the occupation function in SSPC f_P(E,T) under the condition of σ_TSC(T) = σ_P(T).There is a large difference between f_P(E,T) and f_H(E,T), which can be much reduced by introducing an effective attempt to escape frequency ν_eff in the calculation of f_H (E, T). The results show that the mobility-lifetime product (μτ) in TSC obtained from SSPC measure-ments under the above condition is valid. For high field approximation TSC, the simulated ν_eff is found to be temperature dependent.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Discrete Boltzmann Method with Maxwell-Type Boundary Condition for Slip Flow

The rarefied effect of gas flow in microchannel is significant and cannot be well described by traditional hydrodynamic models. It has been known that discrete Boltzmann model(DBM) has the potential to investigate flows in a relatively wider range of Knudsen number because of its intrinsic kinetic nature inherited from Boltzmann equation.It is crucial to have a proper kinetic boundary condition for DBM to capture the velocity slip and the flow characteristics in the Knudsen layer. In this paper, we present a DBM combined with Maxwell-type boundary condition model for slip flow. The tangential momentum accommodation coefficient is introduced to implement a gas-surface interaction model.Both the velocity slip and the Knudsen layer under various Knudsen numbers and accommodation coefficients can be well described. Two kinds of slip flows, including Couette flow and Poiseuille flow, are simulated to verify the model.To dynamically compare results from different models, the relation between the definition of Knudsen number in hard sphere model and that in BGK model is clarified.     

A Modified Approach for Calculating Dressed Quark Propagator at Finite Chemical Potential

Based on the rainbow approximation of Dyson-Schwinger equation and the assumption that the full inverse quark propagator at finite chemical potential is analytic in the neighborhood of μ = 1, it is proved that the dressed quark propagator at finite chemical potential μ can be written as G0^-1 [μ] =iγ·p↑-A（p↑-^2） ＋B（p↑-^2） with p↑-μ= （p↑-p4 ＋iμ）. From the dressed quark propagator at finite chemical potential in Munczek model the bag constant of a baryon and the scalar quark condensate are evaluated. A comparison with previous results is given.     

稀土、2,2''''-联吡啶、邻氨基苯基苯甲酸配合物合成、光谱表征及荧光性质

2,2'-联吡啶(bipy)、邻氨基苯基苯甲酸(HL)与稀土离子(RE=Tb,Eu,Sm,Nd)合成了固体稀土配合物.用元素分析、摩尔电导、紫外光谱、红外光谱、差热-热重分析和荧光光谱,对配合物的组成进行了确定和表征,并对TbL3和TbL3·bipy·3H2O的荧光性能进行了测试和讨论.TbL3·bipy·3H2O的荧光强度比TbL3的荧光强度强.     

Linear Chemical Potential Dependence of Two-Quark Condensate

By differentiating the inverse dressed quark propagator at finite chemical potential μ with respect to μ, the linear response of the dressed quark propagato r to the chemical potential can be obtained, From this we extract a modelindependent formula for the linear chemical potential dependence of the in-medium two-quark condensate and show by two independent methods （explicit calculation and Lorentz covariance arguments） that the first-order contribution in μ to the in-medium two-quark condensate vanishes identically. Therefore if one wants to study the in-medium two-quark condensate one should expand to at/east the second order in the chemical potential μ.     

光束偏转法自动测试激光等离子体冲击波系统的研制

根据光束偏转原理，研制了激光等离子体冲击波自动测试系统的硬件和软件。该系统使用计算机与可编程序控制器作为上下位机，采取上下位机通讯的方式控制步进电机及二维移动架的移动，以改变探测光的相对位置，并利用单模光纤和光电倍增管将探测到的光偏转信号传入数字示波器进行存储，最后计算机将示波器中采集到的光偏转信号进行分析处理。使用该系统对激光等离子冲击波的衰减过程进行了实际测试，得到了较为理想的实验结果。     

飞秒激光剥蚀-多接收电感耦合等离子质谱原位微区分析青铜中铅同位素组成-以古铜钱币为例

建立了飞秒激光剥蚀-多接收电感耦合等离子质谱(fLA-MC-ICPMS)铅同位素原位微区分析方法,分别利用溶液法(SN-MC-ICPMS)和激光剥蚀法(fLA-MC-ICPMS)对15个铜(黄铜,青铜)国家标准物质进行了实验分析,测试的结果表明CuPb12(GBW02137)中Pb同位素组成非常均一,可作为以铜为基体的青铜、黄铜及铜矿中Pb同位素原位微区分析的外部参考物质。对CuPb12进行了112次fLA-MC-ICPMS Pb同位素分析测试,其加权平均值与溶液法测定的Pb同位素比值在2σ误差范围内完全一致,208 Pb/204 Pb和207Pb/206Pb比值的内部精度RSE分别小于90和40ppm,外部精度RSD分别小于60和30ppm。利用本实验室建立的fLA-MC-ICPMS分析方法对13个古铜钱币中Pb同位素进行了原位微区无损伤分析,测试结果表明,不同朝代古钱币中Pb同位素组成差异较大,即使同一朝代的古钱币其Pb同位素组成也不尽相同。     

基于氧气A吸收带的baseline拟合距离反演算法

目标红外被动测距的实现同气体及其波段的选取密切相关。氧气A吸收带具有独特的谱线结构,对于火箭羽流或者高温辐射体的距离探测,氧气A吸收带是最佳的距离反演通道。利用该特点,详细研究了逐线积分算法(LBLRTM),并设计了氧气A带吸收系数及标准光谱计算软件;利用A吸收带吸收光谱带外数据,采用多项式拟合方法,实现基线(baseline)拟合,进而得到带平均透过率;在不同的距离条件下,将两种带平均透过率进行对比,误差在1.9%左右,拟合精度较高,该方法为后续距离的精确反演提供了理论依据。