一种直接用示波器观测单变量非线性系统状态的新方法

为解决用示波器观测单变量非线性系统难的问题, 本文提出了一种45°线法, 该方法能将随时间变化的连续信号以特殊的方式转换成直角坐标上45°线上的点图, 并可用通用双踪示波器 (模拟或数字均可)直接显示出来, 从而达到直接方便地观测和分析单变量被测系统运行时的各种状态, 如周期稳定态, 局部和全局不稳定态. 文中详细阐述了该方法的机理. 同时, 研究和解决了设计实现该方法物理电路的关键问题, 即从连续变化的信号中提取出能反映系统状态的有用信号. 由于蔡氏电路是典型的非线性系统, 且能随参数的变化产生各种丰富的状态, 本文选用该电路作为被测系统进行了大量的物理实验, 实验结果证实了该方法的有效性和实用性. 关键词： 45°线法 单变量系统 系统状态 双踪示波器     

基于LASSO方法的傅里叶变换红外光谱快速定性识别方法

采用红外光谱技术对未知气体组分进行监测,需要对气体组分进行定性识别分析。基于多元线性回归模型的LASSO变量选择技术广泛应用于数据分析领域。将LASSO方法引入到红外光谱分析领域,提出一种LASSO变量选择技术结合循环线性最小二乘(LCLS)分析的定性识别方法,并开展了相关的实验对其进行验证。实验采集CO,C₂H₄,NH₃,C₃H₈,C₄H₁₀和C₆H₁₄六种单组分傅里叶变换红外(FTIR)光谱吸光度谱以及一组C₂H₄和NH₃混合组分的吸光度谱,结合实验室自建光谱数据库,先采用LASSO方法对采集的光谱进行初步定性分析,然后使用LCLS方法剔除干扰组分。实验结果表明,LASSO结合LCLS的方法能有效识别出光谱中的目标组分,即使是在干扰严重的光谱波段也可以剔除掉大部分的干扰组分。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Characterization of iron surface modified by 2-mercaptobenzothiazole self-assembled monolayers

A self-assembled monolayer of 2-mercaptobenzothiazole (MBT) adsorbed on the iron surface was prepared. The films were characterized by electrochemical impedance spectroscopy (EIS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared reflection spectroscopy (FT-IR) and scanning electron microscopy (SEM). Besides, the microcalorimetry method was utilized to study the self-assembled process on iron surface and the adsorption mechanism was discussed from the power-time curve. The results indicated that MBT was able to form a film spontaneously on iron surface and the presence of it could protect iron from corrosion effectively. However, the assembling time and the concentration influence the protection efficiency. Quantum chemical calculations, according to which adsorption mechanism was discussed, could explain the experimental results to some extent.     

光束发散度对紫外写入光纤光栅的影响

用傅里叶衍射光学分析了准分子激光束发散度对于光纤光栅制备的影响，发现光束发散角使光纤光栅的布拉格波长发生改变，相位版后干涉场沿光纤轴向和径向不均匀，对制备30dB高反射率光纤光栅造成困难。实验结果与理论分析基本一致，相对于理想平行光束情况，会聚光束使得光纤光栅布拉格波长出现在短波一边，发射光束使得光纤光栅布拉格波长出现在长波一边。     

有机掺杂溶胶-凝胶法制备pH敏感膜及其光谱响应的研究

使用四甲氧基硅烷（TMOS）和二甲基二甲氧基硅烷（DiMe-DMOS)为共先驱体，采用溶胶－凝胶的有机掺杂，制备对pH具有宽程响应的敏感膜。详细考察了包埋溴酚蓝和溴酚绿的敏感膜对pH的响应值、响应时间、泄漏和可逆性等响应性能指标，并进行了溴酚蓝和溴酚绿在水相与膜内吸收光谱的研究。     

磷光光度法在药物分析中的应用

本文评述了固体基质室温磷光，流体介质室温磷光，低温磷光和室温磷光传感器在药物分析中的应用，涉及到的药物有生物碱，中草药有效成分，四环素类，喹喏酮类，维生素B2，抗癌药物，萘唑啉，萘普生和血管扩张剂潘生丁双嘧哌胺醇等，在药物分析中，固体基质室温磷光取样量只有微升级，操作快，成本低，流体室温磷光结合流动注射和化学传感技术，在药物的快速连续在线监测方面优势明显，而经过改善的低温磷体室温磷光结合流动注射和化学传感技术，在药物的快速连续在线监测方面优势明显，而经过改善的低温磷光方法，除了克服操作方面的某些弱点外，仍然保持高灵敏度的特点，随着敏化和猝死发光，能量转移，衍生发光和免疫发光等技术的发展，磷光方法在药物分析中的应用将会更加广泛。     

控制强度对Bragg光学双稳系统混沌控制的影响

对Bragg光学双稳系统的混沌态提出位相延时反馈的控制方法 ,用数值方法研究了该系统的混沌态在控制强度调制下的动力学行为。结果表明 ,控制强度的取值不同可以使受控系统的状态呈现多种演化模式 ,调节控制强度值不断增加 ,能够有效地将受控系统稳定在所需的周期态和不动点上     

单模光纤偏振特性的测试

叙述测量单模光纤偏振特性的基本原理，介绍了单模光纤的偏振度P，位相差δ及保偏光纤的拍长Lp的测量方法。     

Effects of Bond Alternation on the Ground-State Phase Diagram of One-Dimensional XXZ Model

The ground-state properties and quantum phase transitions (QPTs) of the one-dimensional bond-alternative XXZ model are investigated by the infinite time-evolving block decimation (iTEBD) method. The bond-alternative effects on its ground-state phase diagram are discussed in detail. Once the bond alternation is taken into account, the antiferromagnetic phase (Δ > 1) will be destroyed at a given critical point and change into a disordered phase without nonlocal string order. The QPT is shown to be second-order, and the whole phase diagram is provided. For the ferromagnetic phase region (Δ < -1), the critical point r^c always equals 1 (independent of Δ), and the QPT for this case is shown to be first-order. The dimerized Heisenberg model is also discussed, and two disordered phases can be distinguished by with or without nonlocal string orders. Both the bipartite entanglement and the fidelity per site, as two kinds of model-independent measures, are capable of describing all the QPTs in such a quantum model.