Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

聚变反应时间历程的双峰结构测量

利用新研制的聚变反应速率测量系统,在神光Ⅲ原型装置上测量了间接驱动时充DT气体的玻璃球壳内爆靶丸的聚变反应速率的时间历程,获得了DT中子产额约为1010时的聚变反应速率随时间的变化过程,发现了聚变中子发射在时间上的双峰结构。利用辐射流体程序对聚变中子在时间上的双峰结构进行了数值模拟,发现双峰结构分别由冲击压缩过程和惯性压缩过程产生,靶丸壳层厚度不同时产生的聚变中子发射双峰强度比变化可能是由靶丸的初始表面调制度不同所致。通过理论模拟与实验结果的对比,验证了中子聚变反应历程的双峰结构。     

含铱配合物的聚对苯类电磷光聚合物

通过Suzuki聚合法合成了以聚对苯为主链的含铱配合物的电磷光共轭聚合物。部分苯环单元被β-二酮结尾的烷氧基链取代,进而与2-苯基吡啶配位形成悬垂的铱配合物侧链。宽带隙的聚对苯主链使主体与客体的能级匹配,从而有利于能量的转移。铱配合物通过长β-二酮结尾的烷氧基链悬挂在聚对苯的侧链上提高了聚合物的溶解性,有利于器件的制作。另外,由于连在氧原子上的β-二酮具有较大的旋转自由度,增大了β-二酮的反应活性有利于配位反应的进行。聚合物的EL光谱只显示客体铱配合物的发射,主体的发射已被完全猝灭。这表明聚合物主体和铱配合物客体之间发生了有效的能量转移。PPPIrPPy2聚合物发光器件的EL光谱发光波长为525nm,最大外量子效率为2.6%。     

15.14MeV/u 136Xe离子引起的单粒子效应

研究了15.14MeV/u ¹³⁶Xe离子在不同批次的32k×8bits静态存储器中所引起的单粒子效应.获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系.将单粒子效应截面与灵敏区中沉积的能量相联系,而不是线性能量转移(LET)值.估计了灵敏体积的深度和死层的厚度.     

频闪相移全息干涉计量

本文将相移技术应用在频闪全息干涉计量中,获得了振动物体的定量分析结果.分析了频闪光脉冲宽度对计算结果的影响,并给出了实验结果.     

拖线阵机动时的自适应波束形成

提出了一种MVDR(最小方差无失真响应)的改进算法,用以解决常规MVDR算法由于阵形时变而出现的性能下降问题。在获得时变阵形估计数据的基础上,该算法以统计时段内的平均阵形为基准阵形,在每个扫描方向上根据实际阵形和基准阵形的差异对阵列互谱矩阵多样本进行相位补偿,从而实现统计时段内的互谱矩阵多样本相干累加和目标检测。数值仿真与海上实验数据处理结果表明:与传统MVDR算法相比,改进算法有效缓解了时变阵形下的目标测向角度模糊问题,可提高拖线阵目标左右舷分辨性能、增强弱目标检测能力。     

Numerical analysis of Ytterbium-doped double-clad fiber lasers based on the temperature-dependent rate equation

The effects of temperature on the output power and optimal conditions of Ytterbium-doped double-cladding fiber lasers (YDDFLs) are discussed. Temperature-dependent rate equations for YDDFLs based on Boltzmann distribution are built in two-end pump model. The results show that the output power and the slope efficiency decrease with the increase of temperature. The increase of pump power results in that the effect of the temperature on the output performance increases, and the fiber length is a factor that the effect of the temperature depends on really. Moreover we combine the heat distribution formula with the rate equations and compare the numerical results considering with that not considering the temperature-dependence inside laser cavity, the effect of temperature can be ignored only when the pump power is lower, and the optimal fiber length becomes longer when considering the temperature-dependence.     

Mode locked Er-doped fiber laser with single-wall carbon nanotube saturable absorber

A mode locked Er-doped fiber laser based on a single-wall carbon nanotube saturable absorber is demonstrated. A high quality single-wall carbon nanotubes （SWCNTs） absorber film is fabricated by a polymer composite. The pulse duration is 488 fs with 9.6-nm spectral width at the center of 1564 nm. The repetition rate is 30.4 MHz. The maximum output power is 3 mW. And the single pulse energy is 0.1 nJ.     

The Boundary States of the q-Deformed Supersymmetric t-J Model with a Boundary

The q-deformed supersymmetric t-J model on a semi-infinite lattice is diagonalized by using the level-one vertex operators of the quantum affine superalgebra U_q[\widehat{sl(2|1)}]. We give the bosonization of the boundary states.     

MOCVD生长的InN薄膜中In分凝现象

利用金属有机物化学气相淀积(MOCVD)方法不同生长条件下在c面蓝宝石衬底上制备了InN薄膜,通过不同的物理表征手段研究了InN薄膜的物理性质,结果表明:合适的生长温度可以抑制InN薄膜表面分凝现象。研究认为较低的生长温度使作为N源的NH3分解率较低,In—N的成键可能性小,导致In在表面聚集出现分凝;而较高生长温度时,InN薄膜中In—N键能较小,易发生断裂,反应活性较强的N和H原子逸离薄膜表面,In滞留在薄膜表面也导致In分凝现象的出现。相对于表面分凝的样品,未出现表面分凝的样品的薄膜晶体质量和表面形貌也得到了提高。同时,通过Raman散射谱研究了晶格振动E2声子模的应力效应。