Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

First-Principles Study of Electronic Structure of the Laves Phase ZrFe2

We perform the ab initio calculation for obtaining the density of states and magnetic properties of ZrFe2 Laves phase compound based on the method of augmented plane waves plus local orbital The results indicate that the ferromagnetic state is more stable than the paramagnetic one, but with a slightly larger volume. The 3d - 4d exchange interactions between Fe and Zr electrons lead to the antiparallel coupling for Fe 3d and Zr 4d states, which is responsible for the ferrimagnetic ordering of the compound. The resulting magnetic moment of about 1.98μB for Fe is spatially localized near the Fe site, while around Zr a small but extended negative spin states causes a moment of about -0.44 μB. Moreover, the resulting magnetic moments with the generalized gradient approximation are more consistent with experimental values than that of the local-spin density approximation.     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

Orthogonally Linearly Polarized Dual Frequency Nd：YAG Lasers with Tunable Frequency Difference and Its Application in Precision Angle Measurement

The orthogonally linearly polarized dual frequency Nd： YA G lasers with two quarter wave plates in laser resonator are proposed. The intra-cavity variable birefringence, which is caused by relative rotation of these two wave plates in laser inner cavity, results in the frequency difference of the dual frequency laser also changeable. The theory model based on the Jones matrix is presented, as well as experimental results. The potential application of this phenomenon in precision roll-angle measurement is also discussed.     

Negative Refraction and Near-Field Imaging of an Elliptical-Rod Photonic Crystal Slab in the Second Band

Negative refraction and imaging properties of the electromagnetic wave through a two-dimensional photonic crystal （PC） slab, which consists of a square lattice of elliptical dielectric rods immersed in the air background, is studied by the plane-wave expansion method and the finite-difference time-domain method. A point source placed in the vicinity of the PC slab can form a good-quality image spot through the PC slab for the incident frequencies within the second photonic band. The calculated result also shows that negative refraction occurs in this kind of PC slab.     

Guided Waves in a Multi-Layered Cylindrical Elastic Solid Medium

We investigate the guided waves in a multi-layered cylindrical elastic solid medium. The dispersion function of guided waves is usually complex and the dispersion curves of all modes are not conveniently obtained. Here we present an effective method to obtain the dispersion curves of all modes. First, the dispersion function of the guided waves is transformed into a real function. The dispersion curves are then calculated for all the modes of the guided waves by the bisection method. The modes with the orders n = 0, 1, and 2 are analysed in two- and three-layer media. The existence condition of Stoneley wave is discussed. The modes of the guided waves are also investigated in a two-layer medium, in which the velocity of shear wave in the outer layer is less than that in the inner layer.     

Intense Green Upconversion Luminescence in Er^3＋：Yb^3＋ Codoped Fluorophosphate Glass Ceramic Containing SrTe5O11 Nanocrystals

Er^3＋ ：Yb^3＋ codoped tellurite-fluorophosphate （TFP） glass ceramic exhibits much stronger upconversion luminescence. The intensity of the 540nm green light and 651 nm red light of the TFP glass ceramic is 120 times and 44 times stronger than that of the fluorophospahte （FP） glass, respectively. XRD analysis shows that the nanocrystal in TFP glass ceramic is SrTe5O11. TFP glass ceramic also displays much higher upconversion fluorescence lifetime and crystallization stability. The narrow and strong peak at 540nm is very ideal for practical upconversion luminescence realization. This work is a new trial for exploring non-PbF2 involved nanocrystal upconversion glass ceramics.     

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd：YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

We report the operation of a bidirectional picosecond pulsed ring Nd：YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 × 200 mW.     

Numerical Simulation of the Elastic Shrinkage Induced by Portevin-Le Chatelier Effect

A new one-dimensional phenomenological model based on the dynamic strain aging mechanism is developed. In order to account for the elastic shrinkage induced by the Portevin-Le Chatelier effect, elastic deformation is considered under the boundary conditions of the present model. The simulated results are found to be in good agreement with the experimental observations.     

Low Timing Jitter and Tunable Dual-Wavelength Picosecond Pulse Generation from a Fabry--Pérot Laser Diode with External Injection

A novel scheme to generate tunable dual-wavelength optical pulses with low timing jitter at arbitrary repetition rates is proposed and demonstrated experimentally. The pulses are generated from a gain-switched Fabry-Pérot laser diode with two external cw beams for injection seeding simultaneously. The cw light is generated by two independent distributed feedback laser diodes, and their wavelengths can be tuned independently by two temperature controllers. The dual-wavelength pulses with the pulse width of 57 ps, the timing jitter of 340 fs, are obtained. The sidemode-suppression ratio of the output pulses is better than 23dB over a 10-nm wavelength tuning range.