外FO-群

如果群 G 的所有真商群都是 FO-群,但是群 G 本身不是 FO-群,则称 G 为外 FO-群,本文将给出外 FO-群完全的结构描述．     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

93W合金有关力学参量的综合选评

 对93W合金材料进行了超声测量实验，并结合原有的超声测量结果进行了分析比较，提出了可以直接用冲击波速度关系式的三个系数c₀ 、λ和λ′来对钨合金的有关力学参量，如G₀、K₀、G₀′、K₀′等进行综合选评的方法。得到了一组对93W合金较为合理的力学参量推荐值。     

网络环境下的物理实验教学模式

目前网络环境下的物理实验教学新模式主要有物理实验专题网站、实验教学网络管理、实验类网络课程及远程控制物理实验.本文简要介绍了各个模式的特点及实施方法.     

“网格式平行线法”在螺纹参数测量中的应用

在计算机视觉理论基础上发展起来的视觉检测(vision inspection)技术具有非接触、速度快、精度适中、可实现在线等优点，已广泛地应用于工业产品的在线检测。在计算机视觉检测技术中CCD摄像机是一个最关键的器件，其参数是否准确决定了检测的精度。所以，摄像机标定是视觉检测技术中最基本的也是最重要的一步。在比较其他标定方法的基础上，为了解决传统标定方法对螺纹图像测量系统所带来的一系列问题，采用了一种新的图像测量系统的标定方法——网格式平行线标定方法，该方法运用了CCD亚像素细分技术及调焦技术，可直接得到纵横2个方向的像素，经过理论分析及实验结果均表明，采用该方法具有标定简单、精度高、重复性好等优点，是一种较好的螺纹图像测量系统标定方法。     

双色激光场中1维共线氢分子离子的经典动力学研究

 运用经典理论方法，并采用辛算法数值求解了双色激光场作用下1维共线氢分子离子(H₂⁺)的哈密顿正则方程，得到了氢分子离子在激光场下的经典轨迹。计算了单色场和双色场下氢分子离子(H₂⁺)的存活几率、电离几率、解离几率、库仑爆炸几率随时间的演化，分析了双色场的相位、强度、强度比及倍频的变化对氢分子离子动力学行为的影响,并给出了相应的物理解释。     

(Anti-)de Sitter Black Hole Entropy and Generalized Uncertainty Principle

We generalize the method that is used to study corrections to Cardy-Verlinde formula due to generalized uncertainty principle and discuss corrections to Cardy-Verlinde formula due to generalized uncertainty principle in (anti)-de Sitter space. Because in de Sitter black hole spacetime the radiation temperature of the black hole horizon is different from the one of the cosmological horizon, this spacetime is a thermodynamical non-equilibrium spacetime.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

A Reliability Analysis of Calculated Results for Odd-Even and Odd-Odd Nuclei in Relativistic Mean-Field Theory

We calculate the binding energies of Ni, Cu, Xe, Cs, Pt, Au, Np, Pu isotope chains using two interaction parameter sets NL-3 and NL-Z, and compared the relative errors of the even-even nuclei with those of odd-even nuclei and odd-odd nuclei. We find that the errors of binding energy of odd-even and odd-odd nuclei are not bigger than the one of even-even nuclei. The result shows that comparing with even-even nuclei, there is no systematic error and approximation in the calculations of the binding energy of odd-even and odd-odd nuclei with relativistic mean-field theory. In addition, the result is explained theoretically.     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.