减压扩散高阻密栅技术应用研究

本文对减压扩散机理及高阻密栅技术作了详细的分析,并就设备及工艺方面的关键技术进行了阐述,最后对减压扩散高方阻工艺及密栅匹配技术电池效率进行了对比分析,有以下结论:(1)减压扩散在工艺优化后,方阻均匀性得到大幅改善,达到3;以内.(2)减压扩散电池效率完全可达到常规产线的水平,且在高阻密栅方面更有优势,可有效提升太阳电池效率.     

Conversion of Methanol to Aromatic-Rich Gasoline over High-Efficiency Bifunctional Catalysts: Green Synthesis of GaZSM-5 Zeolites via Dry-Gel Conversion Strategy

Russian Journal of Applied Chemistry - Nanoscale ZSM-5 (AlZ5-D) and Ga-substituted ZSM-5 zeolites ((Al,Ga)Z5-D and GaZ5-D) were synthesized by a green dry-gel conversion strategy. For comparison,...     

考虑非结构性的多级生产流程调度方法

针对智能化柔性制造过程存在的再制造过程,对中小型设备生产车间及其仓储转运的模型构建、分析方法、以及参量相关性提出了新的解决思路.为了最大限度的减少建设周期、合理化投资成本、以及优化生产流程,建立了考虑非结构性的多级生产流程的数学模型,以完成度、完工时间和调度频次为目标函数分析生产要素间的相关性.实验结果表明,融合再加工过程的智能化柔性制造单元中,生产要素为非线性相关,个别要素具备对称性,为实际工况中的生产改进及优化提供了一定理论基础.     

Hexagonal boron nitride quantum dots: Properties,preparation and applications

As a new type of quantum dots (QDs), hexagonal boron nitride quantum dots (BNQDs) exhibit promising potential in the applications of disease diagnosis, fluorescence imaging, biosensing, metal ion detection, and so on, because of their remarkable chemical stability, excellent biocompatibility, low cytotoxicity, and outstanding photoluminescence properties. However, the large-scale fabrication of homogeneous BNQDs still remains challenging. In this article, the properties and common fabrication methods of BNQDs are summarized based on the recent research progress. Then, the corresponding yields, morphologies, and fabrication mechanisms of these as-obtained BNQDs are discussed in detail. Moreover, the applications of these as-obtained BNQDs in different fields are also discussed. This article is expected to inspire new methods and improvements to achieve large-scale fabrication of homogeneous BNQDs, which will enable their practical applications in future.     

松木-聚氯乙烯复合材料催化热解特性的研究

通过热重法研究了松木与聚氯乙烯复合材料的催化热解特性,结果表明聚氯乙烯脱氯阶段与松木的纤维素、半纤维素热分解阶段温度区间重合,二者共热解时存在协同效应,并且HCl的释放对纤维素的脱水反应能够产生催化作用,HCl释放也对木质素的热分解及碳化反应有着明显的催化作用,导致二者共热解制备的碳化物产率提高,约为29.61%。并且利用元素分析仪、扫描电镜和能谱仪对成碳材料进行表征分析,结果表明成碳材料表面粗糙呈现多孔结构,其碳元素含量较高达到74.67%。     

Electrochemiluminescence Enhanced by the Synergetic Effect of Porphyrin and Multi-walled Carbon Nanotubes for Uric Acid Detection

The design and exploration of efficient, stable and environmentally compatible organic emitters for an electrochemiluminescence (ECL) sensor is a promising topic. Herein, a novel environmentally-friendly luminophore, ZnBCBTP@MWCNTs, were fabricated via self-assembly of porphyrin molecules (ZnBCBTP) onto multi-walled carbon nanotubes (MWCNTs). The resulting luminophore ZnBCBTP@MWCNTs displayed not only the highly ECL property and but also the good accelerated electron mobility. Then, a label-free ECL biosensor based ZnBCBTP@MWCNTs was constructed for the ultrasensitive detection of uric acid. Excitingly, this proposed ECL biosensor performed a good linear relationship in the range of 0–300 μM with a low detection limit of 1.4 μM, thus offering another reliable and feasible sensing platform for clinical bioanalysis with good selectivity, stability, and repeatability.     

TBOR-shaped electro-optic modulator with dual output based on double-layer graphene

We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At $\lambda =1550\text{ nm}$, when the switching states are based on the chemical potential, ${\mu }_{\mathrm{c}}=0.38\text{ eV}$ and ${\mu }_{\mathrm{c}}=0.4\text{ eV}$, the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology.