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用线圈电流控制非平衡磁场,用汤森放电击穿形成深度自触发放电,用磁阱捕获放电形成的二次电子和导致漂移电流,形成了高功率非平衡磁控溅射放电。采用偏压为-100V相对磁控靶放置的圆形平面电极收集饱和离子电流;在距离磁控靶14cm的位置由Langmuir探针测量浮置电位;示波器测量磁控靶的脉冲电压、电流、浮置电位和饱和离子电流信号。装置的放电脉冲功率达到0.9MW,脉冲频率最大值为40Hz左右,空间电荷限制条件是控制电子电流和离子电流的主要机制。     

北京谱仪Ⅲ飞行时间计数器系统刻度中的关联分析

利用电子对事例对北京谱仪Ⅲ飞行时间的测量误差, 以及不同测量之间的关联因子随击中位置的变化进行了仔细的研究. 加权的飞行时间由不同的测量值及其相关的误差矩阵计算而得. 蒙特卡罗研究表明. 为北京谱仪Ⅲ开发的关联分析算法 可以正确地处理包含公有误差项的多个实验测量结果的合并, 并且能够为粒子鉴别提供可靠的飞行时间信息.     

反射式液晶空间光调制器用于光束会聚控制

根据偏心透镜组的结构原理,利用液晶空间光调制器(LC-SLM)对其结构进行了优化。对LC-SLM等效透镜功能的原理进行了分析,模拟仿真了利用LC-SLM对光束进行调制的结果。实验验证了LC-SLM通过加载菲涅尔透镜相位图,实现了对光束会聚功能,并且通过耦合位移相位因子可以实现会聚光斑平移的功能,能够代替在偏心透镜组中实现同一功能的透镜。配合后续的透镜组,理论上可以控制光束实现大角度的扫描。     

Stable Narrow Linewidth 689nm Diode Laser for the Second Stage Cooling and Trapping of Strontium Atoms

We report stable narrow linewidth laser systems based on self-developed Littman configuration external cavity diode lasers （ECDLs）. The frequency of the ECDL is stabilized to a high fineness ultralow-expansion glass reference cavity with the Pound-Drever-Hall technique. By heterodyne beating of two identical systems, we conclude that the linewidth 4.3× 10^-14 at an averaging measurement time. of each ECDL is reduced to lower than 150 Hz and its frequency stability reaches time of 1 s, the averaged long-term frequency drift is less than 0.2 Hz/s over 30 h     

20Mgβ衰变谱学与15O(α,γ)19Ne反应(英文)

15O（α,γ）19Ne（p,γ）20Na反应链是高温CNO循环向快速质子俘获过程突破的一条关键路径,相关的反应率输入量可通过20Mg的β衰变可布居19Ne共振态并测量其衰变性质来获得。通过高效率高精度地测量20Mg β衰变中产生的质子与γ射线得到了20Mg衰变的详细信息,并构建了完整的衰变纲图,还进行了19Ne 4 033 keV共振态衰变性质的探索,获得了该态在20Mg β衰变中被布居的分支比上限。通过比20Mg和20O镜像能级跃迁的结果确认了同位旋非对称性,为检验相关理论模型提供了精确的实验数据。对于突破路径中有重要影响的19Ne 4 033 keV共振态的性质,有待更高统计的实验进一步研究。The breakout from the hot CNO cycle to the rapid proton capture process can occur via the 15O(α,γ)19Ne(p,γ)20Na reaction sequence, and the β decay of 20Mg can be used as an alternative method to characterize some specific resonances, which will provide detailed nuclear structure input for reaction rate calculations. The reliable information on the decay properties and structure of 20Mg was obtained by measuring the emitted particles and γ-rays in the β decay with high efficiency and high resolution. Attempt was also made to search for the decay channels associated with the 4 033 keV resonance in 19Ne. To test fundamental symmetries, the transitions in the mirror decays of 20Mg and 20O were compared. The precise experimental data presented here would be important to constrain the theoretical calculations. It is desirable to clarify the astrophysically relevant problem by further experiments with improved statistics on the basis of the present work.     

掺Er磷酸盐玻璃中红外发光特性研究

报道了一种最新型可用于1．5μm光纤通信传输介质的掺Er^3 的磷酸盐玻璃,通过对其吸收谱的测量,可看到在970nm附近有一很强的吸收峰,适合于采用LD激光泵浦。我们在发射波长为970nm的半导体激光器激发下测量了这种材料的发射谱,观察到在红外波段1540nm处在强发射峰。我们从吸收谱出发拟合出了J－O强度参数,进而计算出了Er^3 离子各相关跃迁的理论振子强度、实验振子强度及自发辐射系数,从结果可得出理论和实验是相符的。     

高功率脉冲非平衡磁控溅射放电特性和参数研究

用线圈电流控制非平衡磁场,用汤森放电击穿形成深度自触发放电,用磁阱捕获放电形成的二次电子和导致漂移电流,形成了高功率非平衡磁控溅射放电。采用偏压为-100V相对磁控靶放置的圆形平面电极收集饱和离子电流;在距离磁控靶14cm的位置由Langmuir探针测量浮置电位;示波器测量磁控靶的脉冲电压、电流、浮置电位和饱和离子电流信号。装置的放电脉冲功率达到0.9MW,脉冲频率最大值为40Hz左右,空间电荷限制条件是控制电子电流和离子电流的主要机制。     

（Na0.52K0.44Li0.04）Nb0.9-xSbxTa0.1O3 Lead-Free Piezoelectric Ceramics with High Performance and High Curie Temperature

（Na0.52K0.44Li0.04）Nb0.9-x Sbx Ta0.1O3 lead-free piezoelectric ceramics are prepared by a solid-state reaction method. With increasing Sb content, the transition temperature from orthorhombic to tetragonal polymorphic phase decreased. A composition （Na0.52K0.44Li0.04）Nb0.863Sb0.037Ta0.1O3 is found to possess excellent piezo- electric and electromechanical performances （d33 = 306pC/N, kp =48%, and kt=50%）, and high Curie temperature （Tc = 320 ℃）. These results indicate that （Na0.52K0.44Li0.04）Nb0.863Sb0.037 Ta0.1O3 is a promising lead-free piezoceramics replacement for lead zirconate titanate.     

Dependence of Crystal Quality and β Value on Synthesis Temperature in Growing Gem Diamond Crystals

High quality Ib gem diamond single crystals were synthesized in cubic anvil high-pressure apparatus （SPD- 6 × 1200） under 5.4GPa and 1230℃-1280℃. The （100） face of seed crystal was used as growth face, and Ni70Mn25Co5 alloy was used as solvent/catalyst. The dependence of crystal quality andβ value （the ratio of height to diameter of diamond crystal） on synthesis temperature was studied. When the synthesis temperature is between 1230℃ and 1280℃, theβ value of the synthetic high-quality gem diamond crystals is between 0.4 and 0.6. The results show that when theβ value is between 0.4 and O. 45, the synthetic diamonds are sheet-shape crystals; however, when theβ value is between 0.45 and 0.6, the synthetic diamonds are tower-shape crystals. In addition, when theβ value is less than 0.4, skeleton crystals will appear. When theβ value is more than 0.6, most of the synthetic diamond crystals are inferior crystals.     

枯草杆菌在淀粉液态培养基中生产α-淀粉酶

以枯草杆菌(Bacillus subtilis BF7658)为实验菌株,以淀粉为主要原料,采用液态培养基发酵,生产α-淀粉酶。结果表明:在23℃至44℃内,培养基起始pH值为自然pH值,产酶最佳培养温度为37℃;枯草杆菌在淀粉液态培养基中控制温度为37℃,振荡培养,其产酶最适宜淀粉与水组成比例为:75∶100;在最佳温度37℃下,淀粉∶水为75∶100时,最佳培养时间为36h。