降冰片烯开环易位聚合反应的分子量及分子量分布控制

使用Grubbs催化剂催化降冰片烯单体进行开环易位聚合反应, 研究了催化剂搅拌溶解时间、聚合反应的溶剂极性和三苯基膦的加入等反应条件对降冰片烯单体ROMP反应分子量及分子量分布的影响, 从而得到降冰片烯ROMP反应的最佳条件.     

多弹簧串联系统能量计算

在弹簧质量不能忽略的情况下,推导了n个弹簧串联系统的动能和弹性势能具体表达式,结果表明:n个串联弹簧系统的动能与每个弹簧自身质量、劲度系数密切相关;系统的弹性势能由n个串联弹簧的等效劲度系数和串联弹簧的总伸长量决定.     

ICP-MS测定动物肝脏中铅、镉和砷

利用电感耦合等离子体-质谱法(ICP-MS)同时测定动物肝脏中铅、镉、砷3种元素.样品经聚四氟乙烯高压消化罐消解后,以锗、铟、铋作为内标物质,补偿基体效应,直接用ICP-MS同时测定这3种元素,结果令人满意.该法线性范围宽,分析速度快,准确度和精密度均符合分析测试要求.     

北京谱仪III上利用神经网络方法进行粒子鉴别的研究

本文描述了一种多层感知器的神经网络系统在BESIII粒子鉴别技术中的应用。网络按照子探测器分别进行训练, 输出结果可以作为后续网络的输入或者可以为似然函数方法构建概率密度函数。蒙特卡罗模拟样本的检验结果表明, 利用神经网络方法可以在BESIII上获得较好的粒子鉴别效果。     

采用罗戈夫斯基线圈诊断径向束流

 罗戈夫斯基线圈具有结构简单、高频特性好等特点而被广泛应用于脉冲电流测量。提出了用两个自积分式罗戈夫斯基线圈诊断径向束流的方法,在此基础上设计了两个用于径向束流诊断的自积分式罗戈夫斯基线圈,对其进行了标定。当标准电流的上升沿为30 ns时,罗氏线圈响应时间约为10 ns;整个系统的测量误差约为4.7%。从标定结果来看,该系统的频率响应特性和测量精度能够满足ns级束流诊断的要求,该方法可以用于径向结构高功率微波器件的束流强度测量。     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

（Na0.52K0.44Li0.04）Nb0.9-xSbxTa0.1O3 Lead-Free Piezoelectric Ceramics with High Performance and High Curie Temperature

（Na0.52K0.44Li0.04）Nb0.9-x Sbx Ta0.1O3 lead-free piezoelectric ceramics are prepared by a solid-state reaction method. With increasing Sb content, the transition temperature from orthorhombic to tetragonal polymorphic phase decreased. A composition （Na0.52K0.44Li0.04）Nb0.863Sb0.037Ta0.1O3 is found to possess excellent piezo- electric and electromechanical performances （d33 = 306pC/N, kp =48%, and kt=50%）, and high Curie temperature （Tc = 320 ℃）. These results indicate that （Na0.52K0.44Li0.04）Nb0.863Sb0.037 Ta0.1O3 is a promising lead-free piezoceramics replacement for lead zirconate titanate.     

Dependence of Crystal Quality and β Value on Synthesis Temperature in Growing Gem Diamond Crystals

High quality Ib gem diamond single crystals were synthesized in cubic anvil high-pressure apparatus （SPD- 6 × 1200） under 5.4GPa and 1230℃-1280℃. The （100） face of seed crystal was used as growth face, and Ni70Mn25Co5 alloy was used as solvent/catalyst. The dependence of crystal quality andβ value （the ratio of height to diameter of diamond crystal） on synthesis temperature was studied. When the synthesis temperature is between 1230℃ and 1280℃, theβ value of the synthetic high-quality gem diamond crystals is between 0.4 and 0.6. The results show that when theβ value is between 0.4 and O. 45, the synthetic diamonds are sheet-shape crystals; however, when theβ value is between 0.45 and 0.6, the synthetic diamonds are tower-shape crystals. In addition, when theβ value is less than 0.4, skeleton crystals will appear. When theβ value is more than 0.6, most of the synthetic diamond crystals are inferior crystals.     

Effects of Li Substitution and Sintering Temperature on Properties of Bi0.5（Na,K）0.5TiO3 Lead-Free Piezoelectric Ceramics

Bi0.5 （Na0.72K0.28- x Lix ）0.5 TiO3 （BNKLT- 100x） lead-free piezoelectric ceramics are synthesized by conventional solid state sintering techniques. The dielectric and piezoelectric properties of the BNKLT-100x ceramics as a function of Li content are systematically investigated. It is found that not only Li content but also the sintering temperature has a strong effect on the piezoelectric properties of BNKLT. The piezoelectric constant d33 Of BNKLT varies from 120 to 252pC/N in the Li content range from 0.03 to 0.16. In the sintering temperature range from 1080 to 1130℃, the d33 value of BNKLT-6 changes from 200pC/N to 252pC/N. The BNKLT-6 sample sintered at 1100℃ has the highest piezoelectric constant d33 of 252pC/N, with the electromechanical coupling factors kp of 0.32 and kt of 0.44.     

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.