Modification of n-Si(1 1 1) wafer with olefin carboxyl acids and olefin sulfite acids and the photovoltaic properties of the electrodes

n-Si(1 1 1) crystalline electrode was modified by carboxyl acid groups and sulfonic groups. The flat band potential (U_fb), relation between flat band potential and the carbon numbers to the modified samples and relation between photocurrent density and potential of the modified electrodes were studied. ATR-IR spectra and XPS analysis show that the organic compounds were connected to n-Si(1 1 1) wafer by SiC bond. Calculation indicates that the surface modification ratio increased with the carbon number of organic groups decreased. Mott-Schottky plots gives the flat band potential of the samples to shift to negative positions with the carbon number decreased in both of the two different systems and the flat band potential of the sample with the group of (CH₂)₃SO₃H reaches to −0.82 V, which is more negative than reported, and the flat band potential of all the samples in this paper are more negative than the sample with methyl group [B. Ashish, N.S. Lewis, J. Phys. Chem. B 102 (1998) 1067; S. Takabayashi, M. Ohashi, K. Mashima, Y. Liu, S. Yamazaki, Y. Nakato, Langmuir 21 (2005) 8832]. The photocurrent and photovoltage of the modifications are stable enough under solar illumination for a long time.     

Growth of cubic MgxZn1−xO alloy films by electron beam evaporation

We report the growth of cubic Mg_xZn_1−xO alloy thin films on quartz by electron beam evaporation. It can be found that all the samples have sharp absorption edges by the absorption measurements. X-ray diffraction measurements indicate the Mg_xZn_1−xO films are cubic phase with preferred orientation along the (1 1 1) direction. Energy dispersive spectrometry (EDS) demonstrates that the Mg concentration in Mg_xZn_1−xO films is much higher than the ceramic target used, and the composition can be tuned in a small scope by varying the substrate temperature and the beam electric current. The reasons of this phenomenon are also discussed.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Electronic and geometric structure of methyl oxirane adsorbed on Si(1 0 0)2 × 1

Electronic and geometric properties of the adsorbate-substrate complex formed upon adsorption of methyl oxirane on Si(1 0 0)2 × 1 at room temperature is reported, obtained with synchrotron radiation-induced valence and core-level photoemission. A ring-opening reaction is demonstrated to occur, followed by a five-membered ring formation involving two of the Si surface atoms bound to a surface dimer. Core-level photoemission spectra support the ring-opening reaction and the SiO and SiC bond formation, while from the valence spectra a more extended molecular fragmentation can be ruled out. We discuss the most likely geometry of the five-membered ring.     

Partonic Flow and phi-Meson production in Au+Au collisions at sqrt radical sNN = 200 GeV

We present first measurements of the phi-meson elliptic flow (v2(pT)) and high-statistics pT distributions for different centralities from radical sNN=200 GeV Au+Au collisions at RHIC. In minimum bias collisions the v2 of the phi meson is consistent with the trend observed for mesons. The ratio of the yields of the Omega to those of the phi as a function of transverse momentum is consistent with a model based on the recombination of thermal s quarks up to pT approximately 4 GeV/c, but disagrees at higher momenta. The nuclear modification factor (R CP) of phi follows the trend observed in the K S 0 mesons rather than in Lambda baryons, supporting baryon-meson scaling. These data are consistent with phi mesons in central Au+Au collisions being created via coalescence of thermalized s quarks and the formation of a hot and dense matter with partonic collectivity at RHIC.     

Light quasiparticles dominate electronic transport in molecular crystal field-effect transistors

We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids.     

Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature

Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray diffraction and absorption spectra of the samples, the evolutions with growth temperature show an inflexion at the growth temperature of 300 ^°C. This was attributed to the phase transformation from zinc-blende to wurtzite. With increasing growth temperature from 270 ^°C to 360 ^°C, Fe concentration in the films increases monotonously. The electronic states of Cd_1−xFe_xS were investigated by X-ray photoelectron spectroscopy. Magnetic measurement shows Van Vleck paramagnetism of the Cd_1−xFe_xS thin film in the temperature region below 7 K.     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

An integrated phase-resolved fluorescence imaging system with sub-nanosecond lifetime resolution

In this paper, a novel configuration of an integrated phase-resolved (PR) fingerprint fluorescence imaging system is proposed and implemented. In this integrated PR imaging system, a current modulated 402 nm dual diode laser is proposed to be the light source, to obtain both high laser power and easy modulability. To estimate the lifetime resolution of this PR imaging system, a novel method of using distance-selective suppression of fluorescence signals from two identical fluorescing samples is proposed. Detailed theoretical and experimental analyses are presented. The experimental results demonstrate that this integrated PR imaging system has a lifetime resolution of 0.1 ns. Fingerprint detection experiments are also carried out using this system with latent fingerprints deposited on substrates of aluminum foil and currency.     

Triplet pairing states with equal spins in ferromagnet/superconductor heterojunctions for noncollinear magnetizations

Four-component Bogoliubov-de Gennes equations are applied to study tunneling conductance spectra of ferromagnet/ferromagnet/d-wave superconductor (F₁/F₂/d-wave S) tunnel junctions and to find out signs of spin-triplet pairing correlations induced in the proximity structure. The pairing correlations with equal spins arises from the novel Andreev reflection (AR), which requires at least three factors: the usual AR at the F₂/S interface, spin flip in the F₂ layer, and superconducting coherence kept up in the F₂ layer. Effects of angle α between magnetizations of the two F layers, polarizations of the F₁ and F₂ layers, the thickness of the F₂ layer, and the orientation of the d-wave S crystal on the tunneling conductance are investigated. A conversion from a zero-bias conductance dip at α = 0 to a zero-bias conductance peak at a certain value of α can be seen as a sign of generated spin-triplet correlations.