The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi_3.25La_0.75Ti₃O₁₂ - BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P_r and a coercive field E_c of 3.9 μC/cm² and 70 kV/cm for the film annealed in the microwave oven and 20 μC/cm² and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in non-volatile memories. On the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories.     

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti_xSi_y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.     

XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS³) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current I_S, the ideality factor n, the barrier height Φ_Bn and the serial resistance R_S are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS³ technique), the value of the interface state density N_SS(E) close to the mid-gap was estimated to be in the range of 2-4 × 10¹¹ eV⁻¹ cm⁻², indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.     

Spatiotemporal and Thermal Analysis of VCSEL for Short-range Gigabit Optical Links

High-speed Optoelectronic Modules using Vertical Cavity Surface Emitting Lasers (VCSEL) coupled to Multi Mode Fibers (MMF) are a performing and low-cost solution for 10 Gigabit Ethernet (10 GbE) in short-distance optical links. A complete model of the spatiotemporal behavior of multimode VCSELs, through static and dynamic response, noise, thermal effects, and its coupling to MMF has been investigated. Relative Intensity Noise shows modal dependence and can be affected by spatial filtering due to coupling and fiber propagation. Simulations permit to evaluate critical parameters, such as modulation formats, launching conditions, and operating temperature for global bandwidth and eye diagram optimization up to 10 Gb/s. Simulation results are compared to measurements on prototype optoelectronic modules.     

An Enhancement of the Drezner—Wesolowsky Algorithm for Single-Facility Location with Maximin of Rectilinear Distance

In this note, we examine the algorithm of Drezner and Wesolowsky for locating a facility with maximin rectilinear distance to a given set of demand points. The concept of the closest-point constraint is introduced as a technique for increasing the efficiency of the algorithm. This potential increase in efficiency is demonstrated by an example.     

Modelling treatment effects in the HIV/AIDS epidemic

Advances in recent treatments for HIV/AIDS patients have shown dramatic outcomes in extending the incubation period and AIDS survival time, while also providing significant improvements in the quality of patients' lives. A compartmental model is proposed to analyse the effects of the various treatment regimens which have been introduced. The results produced are in good agreement with routinely collected data relating to levels of HIV/AIDS incidence and prevalence in the UK homosexual population. Some parameter values within the model are obtained from surveys, census results, etc, but others are derived using a maximum likelihood estimation procedure. Finally, the model is used to project levels of incidence and prevalence over the next few years, and to investigate several possible scenarios.     

Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films

A technique for preparing γ-Nd₂S₃ crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of the films are measured in the photon energy range 0.2–3.0 eV at a temperature of 300 K. The frequency analysis of the absorption coefficient demonstrates that the γ-Nd₂S₃ films are characterized by an exponential absorption edge. The photoconductivity spectra and temperature dependences of the photoconductivity for the γ-Nd₂S₃ films doped with cadmium and lead are measured in the photon energy range 0.2–3.3 eV at temperatures varying from 115 to 380 K. The experimental data obtained are interpreted under the assumption that the acceptor levels formed by vacancies in the cation sublattice and compensated for by cadmium and lead donor dopants play a crucial role in the photoconduction. The ionization energy at the lead donor level is determined.     

In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering

Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi_2.5Sr₂Ca₂Cu₃O_y in O₂ atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to T_c(0) }- 79 K. The critical current density of the films had values of up to j_c(50K)}- 10⁴ A/cm².     

On local optima in multiobjective combinatorial optimization problems

In this article, local optimality in multiobjective combinatorial optimization is used as a baseline for the design and analysis of two iterative improvement algorithms. Both algorithms search in a neighborhood that is defined on a collection of sets of feasible solutions and their acceptance criterion is based on outperformance relations. Proofs of the soundness and completeness of these algorithms are given.     

A note on the acyclicity of the Koszul complex of a module

We prove the vanishing of the Koszul homology group H _μ(Kos(M)_μ), where μ is the minimal number of generators of M. We give a counterexample that the Koszul complex of a module is not always acyclic and show its relationship with the homology of commutative rings.