Hole drilling in stainless steel and silicon by femtosecond pulses at low pressure

We report on the ablation and hole drilling in stainless steel SUS304 and Si by femtosecond pulses (wavelength 800 nm; pulse duration >80 fs) at the room and low (5 Torr) air pressure ambient. It was found that the quality of surface processing is improved at low pressure avoiding debris formation. The improvement is due to suppression of the conical emission, resulting from the air optical breakdown at a pre-surface area of sample. Debris-free processing of the movable Si-MEMS components is demonstrated. Techniques for the precise measurement of focal spot size and pulse duration are discussed. PACS 87.80.Mj; 78.66.Bz; 42.62.Cf; 61.82.Bg; 61.80.-x     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Magnetic structures of exchange bias Ni/FeF2(1 1 0) interface

Electronic and magnetic structures of ferromagnetic (FM)/antiferromagnetic (AFM), Ni/FeF₂(1 1 0), with a compensated AFM interface are investigated by using the full-potential linearized augmented plane-wave method. We find that magnetic structures at the AFM interface are perturbed by a contact with the FM material, where the superexchange interaction through the interface F excites and induces a small net moment at the AFM interface. These results predicted may play an important role for explaining the exchange bias in this system, and rule out the exchange bias mechanisms with the spin-flop coupling and the magnetic moment reorientation.     

22 dB all-fiber green amplifier using Er-doped fluoride fiber

We demonstrate a 22 dB all-fiber amplifier at 546 nm using Er³⁺-doped fluoride fiber by forward upconversion pumping of a 974 nm laser diode. The gain saturation effects and the power conversion efficiency of this amplifier are investigated in detail based on gain characteristics and numerical simulations.     

Design of a widely tunable laser with a chirped ladder filter

We theoretically investigated a digitally tunable laser with a chirped ladder filter and a ring resonator to obtain a wide wavelength tuning range covering the whole C- or L- band. The clear relation between the tuning range and laser structure, especially the ladder filter, is described analytically. The introduction of a chirped structure into a ladder filter is effective in achieving both wide tunability and a stable lasing mode. A numerical simulation based on multimode rate equations shows that a tuning range of over 40 nm and a mode suppression ratio over 40 dB can be achieved by introducing a chirped ladder filter.     

Rate constant measurements for initial addition reactions of radicals at the propagation step of photo‐polymerization as studied by pulsed EPR spectroscopy

Pulsed EPR spectroscopy was employed to determine reaction rate constants at an early stage of addition reactions in radical polymerizations triggered by four initiator radicals, which were generated by photodissociation of four parent molecules. Two monomers (tert‐butylacrylate and tert‐butylmethacrylate) were examined as reactant. Stern–Volmer analysis on the measured decay time of electron spin echo intensity of reacting radicals provides rate constants for addition reactions. We focused on rate constants for the second step reaction between monomer and adduct radical that is produced by the first step addition reaction between initiator radical and monomer. The rate constant measured by pulsed EPR was evaluated by theoretical calculations in the light of (1) enthalpy difference between product radical and reactants and (2) charge transfer interaction between reacting radical and monomer. Copyright © 2016 John Wiley & Sons, Ltd.     

Effect of adding artificial reverberation to speech-like masking sound

Time-reversed speech has been known to effectively mask information for speech privacy applications. However, the annoyance and distraction caused by the time-reversed speech-like masking sound is higher than other masking sound. This study investigates the effects of adding artificial reverberation to the time-reversed speech. Subjective listening tests have been conducted to measure the intelligibility of target speech, annoyance and distraction caused by the masking sound. The experimental results suggest that adding artificial reverberation to a speech-like masking sound has a significant effect to reduce the annoyance level while maintaining the masking effectiveness of the original masking sound. A trend was also observed that the addition of artificial reverberation could reduce the level of distraction caused by the masking sound.     

An energy-conserving Galerkin scheme for a class of nonlinear dispersive equations

A Galerkin scheme is presented for a class of conservative nonlinear dispersive equations, such as the Camassa–Holm equation and the regularized long wave equation. The scheme has two advantageous features: first, it is conservative in that it keeps the discrete analogue of the continuous energy conservation property in the original equations; second, it can be formulated only with cheap H¹$H^1$-elements even if the original equations include third derivative u_xxx$u_{\mathit{xxx}}$. Numerical experiments confirm the stability and effectiveness of the proposed scheme.