Polymerisation von mesomorphen Monomeren. 2. Mitt. Polymerisation von 4-(2-Vinyloxy?thoxy)benzoes?ure in Substanz

Ohne Zusammenfassung     

Pentagonal-Dodecahedral La2 Charge Density in [80-Ih]Fullerene: La2@C80

No Abstract     

Multiple Coulomb excitation of a 70Ge beam and the interpretation of the 02 + state as a deformed intruder

Electromagnetic properties of the low-lying states in a ⁷⁰Ge nucleus were studied through the multiple Coulomb excitation of a ⁷⁰Ge beam with a ^natPb target. Relative γ-ray intensities were measured as a function of emission angle relative to the scattered projectile. Sixteen E2 matrix elements, including diagonal ones, for 6 low-lying states have been determined using the least-squares search code GOSIA. The expectation values 〈Q ²〉 of 0₁ ⁺ and 0₂ ⁺ states in ⁷⁰Ge are compared with those in ^{72, 74, 76}Ge. Simple mixing calculations indicate that the 0₂ ⁺ states in ⁷⁰Ge and ⁷²Se can be treated as deformed intruder states. It is shown that the deformed intruder becomes the ground state in ⁷⁴Kr. These interpretations of the 0₂ ⁺ states in this region are compared with the potential-energy surface calculations by the Nilsson-Strutinsky model, which allow to interpret the experimental results in a qualitative way from the theoretical point of view. Received: 2 September 2002 / Accepted: 5 November 2002 / Published online: 25 February 2003 RID="a" ID="a"e-mail: sugawara@pf.it-chiba.ac.jp Communicated by D. Schwalm     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Theoretical analysis on the limitations of the open-circuit voltage of a hydrogenated amorphous silicon p-i-n solar cell

We have made theoretical studies on the limitation of the open-circuit voltageV _oc of a hydrogenated amorphous silicon (a-Si:H) p-i-n type solar cell. The effects of the tail states in the a-Si:H i layer and of the interface recombination are discussed in detail. The opencircuit voltage increases when the distribution of the tail states is sharp and/or the capture cross sections of these states are small. This is because the recombination rate of photogenerated carriers and/or the density of space charge due to trapped carriers in these states become low in these conditions. These effects of the tail states on the value ofV _oc become pronounced when the built-in potential of the p-i-n junction is high. The decrease in the effective recombination velocity of carriers at the p/i and n/i interfaces results in an increase ofV _oc. This increase becomes remarkable when the effects of the tail states on the value ofV _oc are small. Both the sharp distribution of tail states and the small value of the interface recombination velocity are necessary to increase considerably the value ofV _oc. We show the conditions of the material parameters necessary to obtain an open-circuit voltage of 1.0 V.     

Study of buried Si(1 1 1)-5 × 2-Au by surface X-ray diffraction

The structure of buried Si(1 1 1)-5 × 2-Au capped with amorphous Si was investigated using surface X-ray diffraction. It was found that the 5 × 2 structural periodicity is kept under the amorphous Si from the in-plane measurement. Furthermore, the intensity variation along the fractional-order rod indicates that Au atoms are located almost on the same plane.     

Stereoselective synthesis of trans olefins by the reaction of Wittig reagents with selenium. Formation of selenocarbonyl compounds.

Wittig reagents were successfully changed to symmetrical olefins when treated with elemental selenium. The reaction proceeds through a selenocarbonyl intermediate, which existence was confirmed by Diels-Alder reaction.