考虑地表反射类型的气溶胶散射偏振特性

采用逐次阶散射法求解矢量辐射传输方程来研究气溶胶在不同地表反射模型下的散射偏振特性.首先,选取单一地表反射模型和耦合地表反射模型两种地表反射模型.然后,根据地表反射模型计算得到相应的地表反射率,进而采用逐次阶散射法对矢量辐射传输方程进行求解,得到散射光的Stokes矢量.最后,由Stokes矢量计算得出散射光的偏振度.仿真结果表明,两种地表反射模型下气溶胶单次散射的散射辐射强度和线偏振度均相等;耦合地表反射模型的总散射辐射强度和线偏振度总是大于单一地表反射模型;单一地表反射模型的气溶胶单次散射相对总散射的贡献总是大于耦合地表反射模型.研究结果对气溶胶光学特性的反演具有一定意义.     

大视场反射式施密特光学系统设计与检测

大视场、低成本、高性能天文望远镜是当前研究和开发的热点。基于像差平衡原理,在正入射施密特矫正板基础上推导出斜入射反射式施密特矫正板方程,针对焦距1 700 mm,成像视场角4°,波段为0.4 μm～0.9 μm,F数为4.25的光学系统,求解出施密特矫正板方程,并作为初始结构参数代入Zemax软件进一步优化。设计结果表明,在全视场范围内,该系统在奈奎斯特频率100 lp/mm处的调制传递函数MTF大于0.35,畸变小于2.5%,成像质量达到了衍射极限。优化设计后施密特矫正板与最近球面最大偏差为0.005 mm,采用特制的补偿器结合干涉仪可完成面形高精度检测。该施密特系统的设计为大视场、宽波段天文望远镜的开发提供了参考。     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

介质材料二次电子发射特性对微波击穿的影响

以介质填充的平行板放电结构为例,本文主要研究了介质填充后微波低气压放电和微放电的物理过程.为了探究介质材料特性对微波低气压放电和微放电阈值的影响,本文采用自主研发的二次电子发射特性测量装置,测量了7种常见介质材料的二次电子发射系数和二次电子能谱.依据二次电子发射过程中介质表面正带电的稳定条件,计算了介质材料稳态表面电位与二次电子发射系数以及能谱参数的关系.在放电结构中引入与表面电位相应的等效直流电场后,依据电子扩散模型和微放电中电子谐振条件,分别探讨了介质表面稳态表面电位的大小对微波低气压放电和微放电阈值的影响.结果表明,介质材料的二次电子发射系数以及能谱参数越大,介质材料的稳态表面电位也越大,对应的微波低气压放电和微放电阈值也越大.所得结论对于填充介质的选择有一定的理论指导价值.     

Multi-variable special polynomials using an operator ordering method

Using an operator ordering method for some commutative superposition operators, we introduce two new multi-variable special polynomials and their generating functions, and present some new operator identities and integral formulas involving the two special polynomials. Instead of calculating complicated partial differential, we use the special polynomials and their generating functions to concisely address the normalization, photocount distributions and Wigner distributions of several quantum states that can be realized physically, the results of which provide real convenience for further investigating the properties and applications of these states.     

Interpretation and quality of the tilted axis cranking approximation

Comparing with the exact solutions of the model system of one and two particles coupled to an axial rotor, the quality of the semi classical tilted axis cranking approximation is investigated. Extensive comparisons of the energies and M1 and E2 transition probabilities are carried out for the lowest bands. Very good agreement is found, except near band crossings. Various recipes to take into account finite K within the frame of the usual principal axis cranking are included into the comparison. A set of rules is suggested that permits to construct the excited bands from the cranking configurations, avoiding spurious states.     

曲率对有限曲面狭缝阵列传输特性的影响

扩展互导纳法用于研究有限曲面狭缝阵列的传输特性,分析了一维弯曲效应以及单元列数、曲率等因素对磁流分布、散射方向图及频率响应曲线的影响.结果表明,曲面张角是衡量弯曲效应的主要参数. 当曲面张角较大时(120°以上),弯曲效应显著,单元磁流分布剧烈起伏,散射方向图波束展宽且副瓣电平升高,谐振频率、传输带宽及功率透射系数等频率响应特性均发生较大变化.当曲面张角较小时(60°以下),仅边缘附近的单元磁流分布受到曲率影响,散射方向图与传输特性均接近于有限平面阵列,表明此时可近似忽略弯曲效应. 关键词： 频率选择表面 狭缝阵列 传输特性 曲率     

Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.