紫外熔石英元件高精度低缺陷控形控性制造技术研究进展

传统的紫外熔石英元件加工方法本身会引入各类制造缺陷,需要后期加工来消除前期加工带来的缺陷,限制了熔石英元件的加工质量和加工效率。针对这些问题,课题组提出了采用磁流变、离子束、保形光顺和流体动压抛光等可控柔体加工技术提升熔石英元件的加工效果,并开展了相关研究。主要介绍了课题组在关键技术上取得的重要进展,包括亚纳米精度表面控形制造技术、纳米精度本征表面控性生成方法、熔石英元件高精度低缺陷组合工艺与设备等一系列关键技术。通过探讨关键技术及其发展现状,为未来紫外熔石英元件高精度低缺陷制造技术的发展提供参考。     

适用于等熵流动的交错拉氏Godunov方法

为消除传统单元中心型Godunov方法在求解稀疏波问题时的非物理过热现象,发展一种适用于等熵流动的交错拉氏Godunov方法.主要的特征是采用速度与热力学变量交错分布的形式,避免在单元内进行速度平均,从而消除由于动量平均过程导致的动能耗散.与传统的von Neumann型交错网格方法相比,网格的边界通量由节点处的多维黎曼求解器提供,克服了多维人工粘性选取带来的困难.为减少多维黎曼求解器在求解稀疏波问题时的非物理熵增,给出稀疏波出现的合理判据,从而保证了热力学关系式的满足.数值实验表明：该方法能很好地消除稀疏波的过热现象,同时在求解激波问题时又能保持与传统单元中心型拉氏方法相同的激波捕捉能力.     

采用组合引导磁场的多注二极管设计

分析了采用单一同轴磁场时强流相对论多注阴极的侧端发射问题,研究了在不同磁场内半径和多注漂移管长度情况下多注电子束的传输效率。研究发现:由于引导磁场尺寸有限,高压下多注阴极杆及多注阴极柱的电子束发射是影响多注电子束传输效率的主要因素,且该部分电子束对多注漂移管入口管壁的轰击直接影响了多注速调管的重频能力。设计了采用永磁铁和同轴磁场组合工作的强流相对论多注二极管,理论分析和模拟计算证明:基于组合磁场的多注二极管可明显减弱甚至抑制多注阴极发射球头以外的电子束发射,并且组合磁场的磁场位形和强度可满足强流相对论多注电子束的高效、稳定传输。     

Robust fixed-time attitude stabilization control of flexible spacecraft with actuator uncertainty

Nonlinear Dynamics - A robust fixed-time control framework is presented to stabilize flexible spacecraft’s attitude system with external disturbance, uncertain parameters of inertia, and...     

The impact of asymptomatic individuals on the strength of public health interventions to prevent the second outbreak of COVID-19

Nonlinear Dynamics - The pandemic of coronavirus disease 2019 (COVID-19) has threatened the social and economic structure all around the world. Generally, COVID-19 has three possible transmission...     

Dynamic model of Malware propagation based on tripartite graph and spread influence

Nonlinear Dynamics - The large-scale use of the Internet brings the problem of the rapid spread of computer malware over the network. Aiming at the relationship between malware, propagation paths...     

一种限制周期气固两相流直接数值模拟中整体质量流率的新方法

全周期边界条件的气固两相流系统是研究气固相互作用的一个常用计算模型。为平衡周期气固系统在流向上的受力,常对系统施加平衡系统总重力的固定压力梯度,但由于数值误差的影响,这种固定压力梯度的方法会使得气固系统整体不断加速进而导致模拟失真。为了降低系统质心加速度的影响,本文先后采用了前人提出的固定整体质量流率方法和本文提出的压力梯度后验修正方法,并对两种方法的模拟结果进行了对比。     

Quantum Scars in Microwave Dielec trie Photonic Graphene Billiards

Brillouin zone.The closed graphene system has proven to be the ideal model to investigate relativistic quantum chaos phenomena.The electromagnetic material photonic graphene(PG)and electronic graphene not only have the same structural symmetry,but also have the similar band structure.Thus,we consider a stadium shaped resonant cavity filled with PG to demonstrate the relativistic quantum chaos phenomenon by numerical simulation.It is interesting that the relativistic quantum scars not only are identified in the PG cavities,but also appear and disappear repeatedly.The wave vector difference between repetitive scars on the same orbit is analyzed and confirmed to follow the quantization rule.The exploration will not only demonstrate a visual simulation of relativistic quantum scars but also propose a physical system for observing valley-dependent relativistic quantum scars,which is helpful for further understanding of quantum chaos.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

稀土元素(La,Y)掺杂GaN的第一性原理计算

采用基于密度泛函理论的第一性原理赝势平面波方法,对稀土元素La,Y单掺杂和La和Y共掺杂GaN的晶格常数、电子结构及光学性质进行了计算与分析.计算结果表明:掺杂改变了GaN的能带结构,未掺杂和Y掺杂形成导带底和价带顶位于G点的直接带隙半导体,而La掺杂和La和Y共掺杂形成导带底位于G点,价带顶位于Q点的间接带隙半导体.可以通过掺杂元素来调制GaN的禁带宽度和带隙类型,掺杂均提高GaN在低能区的静态介电常数、反射率、折射率,使光子的跃迁强度增大,说明稀土元素La,Y掺杂可有效调制GaN的光电性质.