Ge-Sb-Se硫系薄膜制备及光学特性研究

介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.     

三元Co-Cu-Pb偏晶合金的快速凝固组织形成规律研究

在自由落体条件下实现了三元Co-Cu-Pb合金的液相分离与快速凝固. 实验发现,随液滴直径减小,Co₅₁Cu₄₇Pb₂合金液滴发生由枝晶→两层壳核→枝晶组织的转变,Co₄₇Cu₄₄Pb₉合金液滴的组织形态由壳核组织演化为均匀组织. 两种合金的快速凝固组织均由α(Co),(Cu)和(Pb)固溶体三相组成,α(Co)和(Cu)相主要以枝晶方式生长,(Pb)相分布在(Cu)枝晶间. 关键词： 液相分离 偏晶合金 快速凝固 自由落体     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.     

F+H2→HF+H反应的全量子态分辨的散射动力学研究

利用高灵敏度的氢原子里德堡飞渡时间谱方法研究了 F H_2→HF H 反应碰撞能在5.02kJ/mol 下的交叉分子束反应态态散射动力学.所有在时间飞渡谱中被观测到的谱峰可以归属为 HF 产物的振转态结构.还观测到了明显的 HF(v’=3)前向散射,以及少许的 HF(v’=2)前向散射.     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

Transmission properties of terahertz pulses through subwavelength double split-ring resonators

We present a terahertz time-domain spectroscopy study of the transmission properties of planar composite media made from subwavelength double split-ring resonators (SRRs). The measured amplitude transmission spectra reveal a resonance near 0.5 THz, the central frequency of most ultrafast terahertz systems, for one SRR orientation in normal-incidence geometry. This resonance is attributed to the effect of electric excitation of magnetic resonance of the SRR arrays. In addition, the influences of background substrate, lattice constant, and the shapes of the SRRs on the terahertz resonance are experimentally investigated and agree well with the results of recent numerical studies.     

Synthesis and enhanced acetone gas-sensing performance of ZnSnO<Subscript>3</Subscript>/SnO<Subscript>2</Subscript> hollow urchin nanostructures

A kind of novel ZnSnO₃/SnO₂ hollow urchin nanostructure was synthesized by a facile, eco-friendly two-step liquid-phase process. The structure, morphology, and composition of samples were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and nitrogen adsorption–desorption techniques. The results revealed that many tiny needle-like SnO₂ nanowires with the average diameter of 5 nm uniformly grew on the surface of the ZnSnO₃ hollow microspheres and the ZnSnO₃/SnO₂ hollow urchin nanostructures with different SnO₂ content also were successfully prepared. In order to comprehend the evolution process of the ZnSnO₃/SnO₂ hollow urchin nanostructures, the possible growth mechanism of samples was illustrated via several experiments in different reaction conditions. Moreover, the gas-sensing performance of as-prepared samples was investigated. The results showed that ZnSnO₃/SnO₂ hollow urchin nanostructures with high response to various concentration levels of acetone enhanced selectivity, satisfying repeatability, and good long-term stability for acetone detection. Specially, the 10 wt% ZnSnO₃/SnO₂ hollow urchin nanostructure exhibited the best gas sensitivity (17.03 for 50 ppm acetone) may be a reliable biomarker for the diabetes patients, which could be ascribed to its large specific surface area, complete pore permeability, and increase of chemisorbed oxygen due to the doping of SnO₂.     

High-Power Diode-End-Pumped Slab Composite Tm:YLF Compact Laser

We design a continuous-wave Tm:YLF laser with a composite slab crystal end-pumped by two fiber-coupled laser diodes at room temperature. We achieve a maximum continuous wave output power of 105 W for the bonded slab Tm:YLF laser; the corresponding slope efficiency is 47.7% and the optical-to-optical conversion efficiency is 42.0% with respect to the incident pump power. The laser operated at 1,907.5 nm with a beam quality factor of M² ～3.2 at the highest output power.     

电子辐照条件下初始电位对介质材料表面电位衰减特性的影响

为了研究航天器介质材料表面不同电位初始值对表面电位衰减特性的影响。利用航天器带电地面模拟实验设备对聚酰亚胺和聚四氟乙烯介质材料充电到不同电位值,然后关闭电子枪,用电位计测量介质材料表面电位的衰减曲线,并从理论上对cross-over现象进行分析。介质材料初始电位值越大,则表面电位衰减速度越快,且在一定的时间段内电位衰减效率随初始电位值的增大而变大;在相同的真空度条件下,对于初始电位值之和相等的两组衰减曲线,初始电位值之间差值较小的一组衰减曲线更容易出现cross-over现象;出现cross-over现象的时间和电子的迁移率相关,对于相同的两个初始电位,迁移率越大的材料则出现cross-over现象的时间越短,电位衰减会更快。航天器介质材料表面充电电位越大则衰减速度越快,在一定时间的衰减效率越高。     

Effect of replacement of Se by S on structural and physical properties of Ge–Sb–As–Se–S chalcogenide glasses

In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated. For this purpose, different bulk glasses of Ge₂₀Sb₅As₁₅Se_60?xS_x (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, density, hardness, transmittance, optical band gap energy and refractive index were determined. The value of hardness and glass transition temperature of prepared glasses were found to increase with increasing the sulfur content as a result of formation of GeS₄ tetrahedral units and increasing the network connectivity and average bonding energy. The optical energy gap (according to Tauc’s relation), transmittance and refractive index of prepared glasses are in direct relation with sulfur content. In this study, the highest value of transmittance (about 70%) and lowest value of refractive index (2–2.3) was achieved in Ge₂₀Sb₅As₁₅Se₄₀S₂₀ and Ge₂₀Sb₅As₁₅Se₁₀S₅₀ glasses, respectively.