Multiporous hollow polymer particles

Hollow particles with interconnected cavities have been prepared by a simple modified suspension polymerization of acrylate monomers in the incorporation of a phase inversion process and polymerizable emulsifier. The morphology of particles has been characterized by scanning electron micrographs (SEMs). Based on observations made using an optical microscope equipped with a digital camera and SEM images of particles obtained under different conditions, the formation mechanisms for multiporous hollow particles are discussed.     

Some Results behind Dividend Problems

We consider the basic dividend problem of the compound Poisson model with constant barrierstrategy.Some results concealed behind the dividend problem are made explicit in the present work.Differentmethods and some of which are firstly given in this paper.All these results presented certain direct relationshipbetween some important actuary variables in classical risk theory is also revealed.     

水雾化制备Fe74Al4Sn2P10C2B4Si4非晶合金粉末及其磁粉芯性能研究

采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.     

一维准周期结构声子晶体透射性质的研究

提出了一维准周期结构的声子晶体模型.对弹性波通过该一维准周期结构声子晶体的透射系数进行了数值计算，并与周期结构的透射系数进行了比较.计算结果表明，弹性波通过一维准周期结构声子晶体时，同样会有带隙的出现，且带隙所在频率范围与周期结构的情形完全一样，不同的是在准周期结构声子晶体中，带隙内有很强的局域共振模.对此局域模性质的研究有助于声波或弹性波滤波器的制作. 关键词： 准周期结构 声子晶体 局域化     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

实验数据中的坏值及剔除方法

本文对实验得出的数据采用数理统计的方法进行判断,确定测试结果的正确性;对测试结果出现的坏值应给予剔除。     

双面金属包覆介质波导模序数的判别方法

在双面金属包覆介质波导中 ,随着介质层厚度的变化 ,会出现TM0 模与TM1 模的分离和简并两种状态 ,从而影响衰减全反射 (ATR)谱中模序数的确认。通过对金属波导的理论分析和实验研究 ,提出了三种模序数确认方法 :本征角计算法、吸收峰全峰半宽比较法和吸收峰峰间距比较法 ,实现了两种状态下对模序数的准确判断     

关于Z-空间的对偶空间的讨论

本文以自然的方式定义了从Z-空间X到Z-空间Y的有界线性算子的和以及它们的数乘.从而得到了与赋范空间的对偶空间理论类似的一系列结论.     

原生质体诱变选育去甲基金霉素高产菌

采用紫外线、同平板梯度浓度亚硝基肌，纯铜蒸气激光诱变去甲基金霉素生产菌金霉素链霉菌的原生质体，结果表明原生质体对各种诱变剂的敏感性较高.正变幅度较大.原生质体经紫外线、同平板梯度浓度亚硝墓肌复合诱变后，筛选到一菌株，重新制备原生体，经激光诱变，选育出高产菌株S. A. HU02，去甲基金霉素效价从2831u/ml提高到4337u/ml，提高了53. 2，经多次传代产量性状非常稳定.     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.