Further results on the euler and Genocchi numbers

Summary We characterize the ordinary generating functions of the Genocchi and median Genocchi numbers as unique solutions of some functional equations and give a direct algebraic proof of several continued fraction expansions for these functions. New relations between these numbers are also obtained.     

可能性理论的推广方法及合理性研究

本文通过引入二维可能性分布函数的概念，将可能性测度推广到二维的情形。并给出了二维可能性测度的一些重要性质。文中还重点证明了该推广方法的合理性。     

HOMOCLINIC SOLUTIONS FOR AUTONOMOUS DIFFERENTIAL EQUATIONS

ＨＯＭＯＣＬＩＮＩＣ　ＳＯＬＵＴＩＯＮＳ　ＦＯＲ　ＡＵＴＯＮＯＭＯＵＳ　ＤＩＦＦＥＲＥＮＴＩＡＬ　ＥＱＵＡＴＩＯＮＳ￥ＺｅｎｇＷｅｉｙａｏ（曾唯尧）（ＨｕｎａｎＬｉｇｈｔＩｎｄｕｓｔｒｉａｌＣｏｌｌｅｇｅ）＆ＷａｎｇＸｕｅｘｉｎ（王学鑫）（Ｚｈｅｊｉ...     

指数型二分性与拟自治奇异摄动系统

通过对Ｋ．Ｊ．Ｐａｌｍｅｒ￣［４］中方法的改进，本文讨论了摄动系统有界解的存在性，得到了不同于［４］中的结果，并把改进了的方法运用到拟自治奇异摄动系统，得到了拟自治奇异摄动系统存在有界解的一个简洁的充分条件。本文的方法还提供了一个处理摄动项含小参数的方法。     

Effects on the evolution of microstructure and properties of low-silicon cast aluminum alloys in service

ABSTRACT

The microstructure evolution and property change of four kinds of low silicon cast aluminum alloy exposed to heat for 0–50?h at 200°C were studied by means of Brinell hardness test, tensile property test, friction and wear property test and XRD analysis. The results show that with increasing thermal exposure time, the tensile strength of each group of samples decreased and the amount of wear increased. The tensile strength of samples with more Si content decreased slowly. When the time increased to 50?h, the increase of wear loss was the largest. The hardness of samples after thermal exposure increases compared with that before thermal exposure. The residual stress of (311) diffraction crystal surface of AlSi3.5Mg0.66 under different thermal exposure time was measured. The type of residual stress changed from residual tensile stress to residual compressive stress after thermal exposure. There is an abnormal phenomenon that the hardness of the sample increased and the amount of wear increased, and it is evident that the distribution of residual stress was inhomogeneous after thermal exposure. It is found that with increasing thermal exposure time to 50?h, the average lattice distortion ε of the low-index crystal plane and the high-index crystal plane in the aluminum alloys gradually increased.     

氦在铝表面辐照和积聚的团簇动力学模拟

我们利用团簇动力学模型(IRadMat)研究了keV-He离子辐照金属铝的缺陷动力学和氦的聚集行为.通过对不同俘获类型(团簇、晶界和位错)俘获He浓度的定量分析,我们发现大多数He原子被晶界吸收,这成为铝在低辐照通量下发生脆化的主要原因.随着辐照能量的增加,He滞留峰的位置会变得更深.然而,随着辐照通量的增加,He在体内的滞留量会变得更多,但滞留深度的峰值位置不变.我们的结果表明,晶界的影响在He的滞留分布以及铝的脆化行为中起着关键作用,这也有助于我们理解He在金属中的动力学行为和损伤的分布.     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

激光产生温稠密物质的微观动力学过程及状态诊断

随着大型激光装置的建立和精密测量技术的发展,强激光与固体相互作用成为实验室产生温稠密物质的一个重要手段。温稠密物质的结构复杂性、瞬态性和非平衡性给理论建模和实验测量带来了巨大挑战。本文系统介绍了激光产生温稠密物质的实验手段和理论模拟方法方面的重要进展,分析了其中的电子激发动力学、电子-离子能量弛豫过程、离子动力学等物理过程,总结了温稠密物质状态诊断的实验技术和理论方法,并论述了激光产生温稠密物质的发展趋势。     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.