Justification of the Shallow-Water Limit for a Rigid-Lid Flow with Bottom Topography

The so-called lake equations arise as the shallow-water limit of the rigid-lid equations—three-dimensional Euler equations with a rigid-lid upper boundary condition—in a horizontally periodic basin with bottom topography. We prove an a priori estimate in the Sobolev space H ^m for m≥ 3 which shows that a solution to the rigid-lid equations can be approximated by a solution of the lake equations for an interval of time which can be estimated in terms of the initial deviation from a columnar configuration and the magnitude of the initial data in H ^m , the gradient of the bottom topography in H ^m+1 , and the aspect ratio of the basin. In particular, any solution to the lake equations remains close to some solution of the rigid-lid equations for an interval of time that can be made arbitrarily large by choosing the aspect ratio of the basin small. Received 10 October 1996 and accepted 15 May 1997     

Consecutive reactions of diethoxydimethylsilane and triethoxymethylsilane with methoxide ions in methanol solution

The consecutive reactions of (CH₃)₂Si(OC₂H₅)₂ and CH₃Si(OC₂H₅)₃ with methoxide ions were investigated in methanol solutions. The reverse transesterification reactions with ethoxide ions could be neglected in both cases since the concentration of ethoxide in methanol solution was assumed to be low due to the fast equilibrium reaction C₂H₅O^? + CH₃OH ? C₂H₅OH + CH₃O^?. The progress of the reactions was followed by monitoring the formation of ethanol with a Fourier-transform infrared spectrometer. All rate constants were determined at 295 K. The reactions between the dialkoxydimethylsilanes and methoxide ions were assumed to consist of two consecutive steps that can be represented by the net reaction; (CH₃)₂Si(OC₂H₅)₂ + 2CH₃O^? → (CH₃)₂Si(OCH₃)₂ + 2C₂H₅O^?. The two consecutive rate constants were established as 1.93 ± 0.12M^?1s^?1 and 1.00 ± 0.12M^?1s^?1, respectively. The consecutive rate constants for the reactions between the trialkoxymethylsilanes and methoxide ions can be written according to the total reaction; CH₃Si(OC₂H₅)₃ + 3CH₃O^? → CH₃Si(OCH₃)₃ + 3C₂H₅O^?. The three rate constants corresponding to each consecutive step were established as 1.12 ± 0.09 M^?1s^?1, 0.82 ± 0.10 M^?1s^?1, and 0.51 ± 0.06 M^?1s^?1, respectively. © 1995 John Wiley & Sons, Inc.     

高功率飞秒脉冲激光器的进展

概述了超短激光脉冲技术发展的历程。详尽的论述了啁啾脉冲放大技术的原理和一些关键技术 ,并对当今飞秒激光器研究发展的状况进行了综述。在分析其应用前景的基础上 ,进一步指出了这一技术领域未来的发展趋势。结果表明 ,脉冲激光放大系统以后的发展方向是 :更短脉冲 ;追求更高峰值功率 ;连续光谱调谐化 ;向小型化乃至全光纤化发展。     

一种新型的二元光学器件——多位相光束分束器的制作

本文报道了用于多光束分束器的反射式16位相值二元光学器件的制作。该二元光学器件把一束光束分成5×5光束阵列。测量的衍射效率为76.16%,接近理论设计值79.68%。该二元光学器件的有效孔径为10mm×10mm。     

e-A深度非弹性散射中胶子辐射振幅的新计算方法

在e-A深度非弹性散射过程中, 喷注穿过冷核介质时, 多重散射诱导胶子辐射会导致对碎裂函数的修正及喷注的能量损失.前期研究中关于计算e-A深度非弹性散射中胶子辐射振幅的两种方法: 螺旋振幅近似和微扰QCD严格计算都异常繁杂. 本文发展了一种新的方法, 可以方便计算出多重散射导致胶子辐射的振幅, 得到的碎裂函数的修正以及能量损失与严格计算的结果一致.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.