利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.     

e-A深度非弹性散射中胶子辐射振幅的新计算方法

在e-A深度非弹性散射过程中, 喷注穿过冷核介质时, 多重散射诱导胶子辐射会导致对碎裂函数的修正及喷注的能量损失.前期研究中关于计算e-A深度非弹性散射中胶子辐射振幅的两种方法: 螺旋振幅近似和微扰QCD严格计算都异常繁杂. 本文发展了一种新的方法, 可以方便计算出多重散射导致胶子辐射的振幅, 得到的碎裂函数的修正以及能量损失与严格计算的结果一致.     

Normalization and Fermi–Coulomb and Coulomb hole sum rules for approximate wave functions

For approximate wave functions, we prove the theorem that there is a one‐to‐one correspondence between the constraints of normalization and of the Fermi–Coulomb and Coulomb hole charge sum rules at each electron position. This correspondence is surprising in light of the fact that normalization depends on the probability of finding an electron at some position. In contrast, the Fermi–Coulomb hole sum rule depends on the probability of two electrons staying apart because of correlations due to the Pauli exclusion principle and Coulomb repulsion, while the Coulomb hole sum rule depends on Coulomb repulsion. We demonstrate the theorem for the ground state of the He atom by the use of two different approximate wave functions that are functionals rather than functions. The first of these wave function functionals is constructed to satisfy the constraint of normalization, and the second that of the Coulomb hole sum rule for each electron position. Each is then shown to satisfy the other corresponding sum rule. The significance of the theorem for the construction of approximate “exchange‐correlation” and “correlation” energy functionals of density functional theory is also discussed. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

物质纯重力场部分的能量-动量张量研究

认为物质的质量(能量)存在形式可分为两部分，一部分是以纯物质形式存在的，另一部分是以纯重力场形式存在的.物质质量(能量)这两种形式各自对应着相应的能量 动量张量，物质总的能量-动量张量可表示为Tμν=T(Ⅰ)μν+T(Ⅱ)μν,这里，T(Ⅰ)μν，T（Ⅱ）μν分别代表物质纯物质部分和纯重力场部分的能量-动量张量.通过类比电磁理论，定义：ωμ≡-c2gμ0/g00,并引入一个反对称张量Dμν=ωμ/xν-ων/xμ，则物质纯重力场部分的能量-动量张量为T(Ⅱ)μν=(DμρDρν-gμνDαβDαβ/4 关键词： 能量-动量张量 纯重力场 重力场方程 标量重力势 矢量重力势     

高折射率芯Bragg光纤的色散特性研究

应用超格子模型分析了高折射率芯Bragg光纤的色散特性，讨论了Bragg光纤的色散的比例性质以及光纤的芯径、包层周期、填充率与波导色散的关系，并利用这些关系举例实现了Bragg光纤在1.55μm附近的宽带色散平坦. 关键词： Bragg光纤 模式 色散 波导色散     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。