Effects of post-deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

To systematically evaluate the quality of SiN_x films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiN_x within the SiO₂/SiN_x/SiO₂/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiN_x layer. In particular, new finding is that Si-rich SiN_x in the SiN_x layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiN_x layer becomes thinner, whereas the interface layer between the SiN_x layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiN_x films in stacked structures from various perspectives.     

Synergistic Spin Transition between Spin Crossover and Spin‐Peierls‐like Singlet Formation in the Halogen‐Bonded Molecular Hybrid System: [Fe(Iqsal)2][Ni(dmit)2]⋅CH3CN⋅H2O

To introduce halogen‐bond interactions between a cation and an anion, a novel Fe^III complex from iodine‐substituted ligands involving a paramagnetic nickel dithiolene anion was prepared and characterized. The compound exhibited the synergy between a spin‐crossover transition and a spin‐Peierls‐like singlet formation. The halogen‐bond interactions between the iodine and the sulfur atoms stabilized the paramagnetic state of π‐spins and played a crucial role in the synergistic magnetic transition between d‐ and π‐spins. In addition, the compound showed the light‐induced excited spin state trapping effect.     

Discotic Liquid Crystals of Transition Metal Complexes, 19: Discotic Mesomorphism and Double Clearing Behavior of Octakis(dialkoxyphenyl)phthalocyanine Derivatives

Eight novel octakis(3,4-dialkoxyphenyl)- phthalocyanine derivatives, Cn-M (2, M=2H; 3, M=Ni; 4, M=Cu; a, decyloxy; b, undecyloxy; c, dodecyloxy), have been synthesized and characterized. It was found that each of the derivatives exhibits discotic liquid crystalline properties, and that each of the Cn–Cu (4) derivatives has two kinds of D_rd2( P 2₁/ a ) mesophases. These Cn–Cu (4a,b,c) and C₁₂–2H (2c) derivatives exhibit a unique double clearing behavior.     

POE incorporation into ionic clusters of ionomer and ion-conduction behaviors

Poly(oxyethylene) (POE) was incorporated into the ionic clusters of ionomers, ethylene and methacrylic acid (7.2% neutralized with KOH) copolymer membrane. The changes of properties were studied from SAXS, DSC, IR and ionic conductivity. The IR study suggested that the coordinated structures in ionic clusters of the membrane were destroyed by POE incorporation, and also SAXS suggested that ionic clusters were swollen by POE incorporation. The ionic conductivity, a carrier being K⁺ in this system, increases from 10^?16 S/cm to 10^?9 S/cm at 30°C by the incorporation of POE (20.5 wt%). On the other hand, a large amount of POE (63 wt%) could be incorporated into ionomer membrane by the esterification of methacrylic acid groups (93%) with POE. When LiClO₄ was added, ionic conduction occurred in the phase-separated POE domain, which had a low glass transition temperature (?55.2°C), showing an ionic conductivity 2.6 × 10^?6 S/cm at 25°C.     

Analysis of the temperature dependence of the high-frequency EMR spectra of Mn ions in the lithium-ion battery material LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript>

This paper deals with the analysis of the temperature dependence of high-frequency EMR (HF-EMR) spectra due to Mn³⁺ and Mn⁴⁺ ions in the lithium manganese spinel LiMn₂O₄. A range of powder samples obtained by the sol-gel method with calcinations in several temperature ranges were prepared for this study. Based on the initial characterization carried out by a number of techniques, the physicochemical and structural properties of the samples were earlier determined. Independently, temperature magnetization and HF-EMR measurements were carried out. The EMR spectra vary strongly between samples, indicating possible structural or chemical changes. Quantitative analysis of the temperature dependence of the HF-EMR spectra due to Mn³⁺ and Mn⁴⁺ ions in LiMn₂O₄ is presented in this paper. The spectral analysis concerns the line shape, linewidth, intensity and g-factors. Fittings using the Lorentzian spectral shape and, to a certain extent, the Gaussian spectral shape have been carried out in order to parameterize the temperature dependence of the HF-EMR spectra. This parameterization of the HF-EMR experimental data enables a deeper characterization of the samples. Subsequently, a better insight into the role of the Mn³⁺ and Mn⁴⁺ ions in accounting for the characteristics most suitable for application of LiMn₂O₄ as a cathode material may be gained.     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

Turbulence structures in high-speed air flow along a thin cylinder

Turbulent flow in the axial direction along a cylinder representing a monofilament yarn was reproduced for a relatively wide range of radius Reynolds numbers using direct numerical simulations. In the simulation of the thinnest cylinder, the friction coefficient agreed with a previously published formula. A pair of high- and low-speed streaks was detected around even the thinnest cylinder, whereby it was confirmed that turbulence was sustained according to the analysed turbulence statistics. Even when only a single pair of streaks around the cylinder was detected, the characteristics of the turbulence structures, such as the mean streak spacing based on the viscous length scale, were the same as those in flows over a flat plate. It was found that the friction coefficient changes in a way that maintains the structural characteristics of the flow, consistent with the view that universal characteristics of turbulence structures exist.     

Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001)

A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures covering the surface in parallel lines, less than 1 nm wide and up to 30 nm long. Core-level photoemission spectroscopy and diffraction reveals the local structure of buried Ga and Se atoms to reflect the bulk, defected zinc-blende structure of beta-Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines are proposed to be responsible for the observed growth anisotropy in heteroepitaxial Ga2Se3.     

Mechanics of a particle near the center of a rotating ring

The equations of motion of a test particle moving near the center of a massive rotating ring are derived up to the post-post-Newtonian order of approximation, by using the metric tensor for many body system which is Minkowskian at spatial infinity. Logarithmic divergences due to self-interaction of the ring appear in the equations of motion. These divergences can be removed by the procedure which is similar to the renormalization method in particle physics. In the equations of motion there appears a force directing to the rotation axis and depending on the angular velocity of the ring. This force vanishes when the magnitude of the gravitational constant times the mass of the ring divided by the radius of the ring is about one tenth of the square of the velocity of light. Under this condition it is shown that the relative magnitude of the Coriolis force to the centrifugal force in the equations of motion agrees with the expected one from the equations of motion in a rotating reference frame.     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.