Single-shot polarization-imaging digital holography based on simultaneous phase-shifting interferometry

We propose single-shot digital holography which is capable of simultaneously capturing both the information of multiple phase-shifted holograms and the distribution of the polarization. In this technique, a single image sensor records both the information required for phase-shifting interferometry and that of the polarization states of objects using an array of polarizers. The essence of the technique is the capability of imaging the distribution of the polarization of three-dimensional objects with a single-shot exposure by using the space-division multiplexing of holograms. The validity of the proposed technique was confirmed by the preliminary experiments.     

基于MPS方法的汽泡凝结数值模拟研究

采用移动粒子半隐式(MPS)方法对静止过冷水中单个汽泡的凝结现象进行了数值模拟,研究了不同初始压力和初始直径时饱和蒸汽汽泡凝结过程,获得了凝结过程中汽泡形状、当量直径和压力的变化规律;汽泡初始压力为0.1～0.5MPa,初始直径为2mm、3mm和5mm;过冷水压力为0.1MPa,温度为70℃。结果表明两相界面不存在压差时,凝结过程中汽泡始终保持球形,汽泡当量直径逐渐减小,压力近似不变;相界面存在压差时,凝结过程中汽泡从球形逐渐变为心形、半月形,汽泡当量直径和压力会出现周期性振荡,且初始压力越大振荡幅度越大。     

AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

Curdlan as a Polymeric Starting Material to Access C6-Modified Glucose Derivatives

We evaluated the potential of a linear β-1,3-glucan (curdlan) as a starting material to access C6-modified glucose derivatives and found that 6-bromo-6-deoxyglucose, 6-azide-6-deoxyglucose, and 6-acetamido-6-deoxyglucose could be readily prepared from curdlan through its C6-selective and quantitative modifications and subsequent acid-catalyzed hydrolysis.