Luminescence of Ce3+ in lanthanum silicon oxynitride

The luminescence properties of lanthanum silicon oxynitride(La-Si-O-N) series doped by trivalent Ce ions have been investigated to seek for tunable wavelength-conversion phosphor for white light emitting diode applications.Four compound hosts of LaSiO2N,La4Si2O7N2,La5Si3O12 N,and La2Si6O3N8 were synthesized and examined in this work.Crystallographic examination for the equal amount of Ce 3+ substitution indicated that the covalency degree decreased in a sequence LaSiO2 N > La2Si6O3N8 > La4Si2O7N2 > La5Si3O12 N,not simply in correlation to the ratio of N3/O2.Excitation and emission spectrum measurements showed the main features of Ce3+ luminescence in the series:the centre of gravity of 5d bands depends on crystal-field splitting more strongly than that on covalency of Ce-N bonding;nephelauxetic effect could not be observed clearly for the investigated series;to some extent Stokes shift was dominated by crystal-field splitting rather than Ce-N covalency degree.     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

Terahertz Quantum Cascade Laser Operating at 2.94THz

The development of quantum cascade laser at 2.94 THz is reported. The laser structure is based on a bound-to-continuum active region and a semi-insulating surface-plasmon waveguide. Lasing is observed up to a heat-sink temperature of 70 K in pulsed mode with light power of 4.75 mW at 10 K and 1 mW at 70 K. A threshold current density of 296.5 A/cm2 and an internal quantum efficiency of 1.57 × 10-2 per cascade period are also observed at 10 K. The characteristic temperature of this laser is extracted to be T0 = 57.5 K.     

空间滤波实验中光路和傅里叶变换透镜孔径对实验的影响

运用空间域和频率域方法讨论了阿贝-波特实验和空间滤波实验中光波分别经过"4f系统"、双透镜系统(两种)和单透镜系统时透镜的傅里叶变换和物体的频谱,分析了空间滤波实验中光路和傅氏透镜孔径对实验的影响.     

不同重叠排列方式的双层高温超导块材在永磁轨道上方的悬浮特性

研究了永磁轨道上方双层高温超导块材两种不同堆叠方式(籽晶生长线对齐方式和籽晶生长线错开方式)的悬浮特性。实验发现:这两种不同的堆叠方式对悬浮性能有不同的影响。随着场冷高度的增加,它们对悬浮性能的增加效应越来越弱,这种现象对于悬浮力来说尤其明显。场冷高度为10 mm和15 mm时,对悬浮力来说,籽晶生长线对齐堆叠方式与错开方式相比,第一次测量时前者减少的百分比为11.588%和0.870%,第二次测量时为12.693%和1.363%,第三次测量时为12.399%和1.370%。导向力也有类似的结论。经实验可以看出,可以通过优化每一块高温超导块材的具体摆放位置,来提高高温超导磁悬浮车的承载能力和稳定性。同时,这一结果对高温超导磁悬浮轴承、飞轮储能等悬浮间距小的场所也具有一定的参考价值。     

基于光谱法舌诊的脂肪肝快速诊断

提出了一种基于光谱技术的脂肪肝无创、快速诊断新方法。由于舌体能较客观的反映人体生理、病理变化,因此采集志愿者舌体舌尖部位的反射光谱,然后对数据进行分析,计算反射光谱的归一化反射率。建立3层BP网络模型,从采集来的115例样本中抽取32例健康人和44例脂肪肝患者的光谱归一化反射率作为神经网络的输入,再对未知的14例健康人样本和25例脂肪肝患者样本进行分类预测,分类正确率达到89.7%,实验结果表明了光谱法运用于脂肪肝快速无创诊断的可行性。同时,实验结果说明光谱法能更客观全面地反映人舌所携带的组织细胞、微循环等方面的信息,有可能为临床提供一种快速、简便的诊断手段,也为今后的中医证侯的度量提供借鉴。     

Attosecond manipulation of ionization and efficient broadband supercontinuum generation in stretched molecules

<正>We theoretically investigate the high-order harmonic generation from stretched molecules in a linearly polarized intense field.By adopting an infrared pulse combined with an ultraviolet(UV) attosecond pulse,the ionization process can be controlled effectively.In this excitation scheme,the harmonic spectrum beyond I_p+3.17U_P is significantly enhanced by two orders,where I_p and U_p=e~2E_0~2/(4m_eω~2) are the ionization and ponderomotive potential,then smooth broadband supercontinuum with the bandwidth of about 120 eV is obtained,which leads to an isolated sub-60- as attosecond pulse with a high signal-noise ratio.Moreover,the bandwidth of the supercontinuum is weakly dependent on the location and pulse duration of the UV pulse.     

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

<正>The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy,spectroscopic ellipsometer and atomic force microscopy.It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH_4 and the amorphous induction of glass surface during the initial ignition process,and growth of the incubation layer can be suppressed and uniformμc-Si:H phase is generated by the application of delayed initial SiH_4 density and silane profiling methods.     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

X波段重复频率GW级超辐射相对论返波管

运用超辐射机理,通过粒子模拟设计了X波段超辐射相对论返波管,并在小型Tesla脉冲源平台上开展了实验研究。通过空间功率积分和直接对辐射微波时域波形的分析得到实验结果:在束压350 kV、束流4.8 kA、脉宽3.1 ns、引导磁场2.2 T条件下,产生的微波辐射功率1.4 GW,中心频率9.36 GHz,脉宽500~700 ps,辐射模式为TE11,能在重复频率100 Hz下稳定运行。功率转换效率超过80%。实验结果与粒子模拟结果比较吻合,成功实现了在短脉冲条件下产生重复频率、亚纳秒脉宽、GW级微波辐射。