基于1–10GHz空地链路信号的雨强监测方法可行性研究

空地链路上的微波信号受降雨影响, 会产生功率衰减和去极化效应. 基于这些物理特性, 本文提出利用1–10 GHz空地链路信号的降雨干扰项获取雨强的方法, 并开展了相关理论研究. 根据空地链路信号与雨滴复杂的相互作用, 研究了空地链路信号频率为1–10 GHz时, 雨强 (rain rate, R) 对衰减 (attenuation, A) 和交叉极化分辨率 (cross-polarization discrimination, XPD)的影响, 分别建立了A-R和XPD-R关系模型. 通过数值模拟, 分别分析了利用上述两个关系模型估测雨强的可行性, 并系统研究了不同频率、极化方式和仰角条件下的适用性. 研究结果表明, 对于水平极化或圆极化, 且频率较高的空地链路信号, 利用A-R关系反演强降雨具有理论上的可行性; 对于不同频率和极化方式的信号, XPD-R关系模型都可以用于反演雨强, 并且对于1–50 mm·h^-1范围内的雨强, XPD较为敏感; 不同仰角条件下, A-R和XPD-R 模型都适用. 在4–10 GHz时, 本文的XPD-R模型和国际电信联盟ITU-R中XPD预测模型的结果非常接近. 所得出的结论对于下一步开展相关的验证实验, 拓展卫星系统的气象应用, 实时估测降雨强度, 实现全球降雨观测具有重要的参考价值. 关键词： 空地链路信号 雨强 衰减特性 交叉极化分辨率(XPD)     

二氯氧锆比色法测定陈皮中的总黄酮

建立陈皮中总黄酮的含量测定方法,以控制其质量.以橙皮苷为对照品,采用ZrOCl2比色法测定陈皮中总黄酮的含量,测定波长为312.5nm.在浓度0.0044-0.022mg/mL范围内,吸光度与浓度呈良好的线性关系（r-0.9999）,平均回收率为100.69％,RSD为1.64％（n=6）.本法操作简单,具有良好的稳定性和重现性,适用于陈皮中总黄酮的含量测定和评价.     

Efficiency Improvement in Polymer Light‐Emitting Diodes by “Far‐Field” Effect of Gold Nanoparticles

The “far‐field” effect of metal nanoparticles (NPs), when chromophores localized nearby metal NPs (typically the distance >λ/10), is an important optical effect to enhance emission in photoluminescence. The far‐field effect originates mainly from the interaction between origin emission and mirror‐reflected emission, resulting in the increased irradiative rate of chromophores on the mirror‐type substrate. Here, the far‐field effect is used to improve emission efficiency of polymer light‐emitting diodes (PLEDs). A universal performance improvement is achieved for the full visible light (red, green, blue) PLEDs, utilizing gold (Au) NPs to modify the indium tin oxide (ITO) substrates; this is shown by experimental and theoretical simulation to mainly come from the far‐field effect. The optimized distance, between the NPs and chromophores with visible light emission ranging from 400 to 700 nm, is 80–120 nm. Thus the scope of the far‐field may overlap the light‐emitting profile very well to enhance the efficiency of optoelectronic devices. The 30–40% enhancement is obtained for different color‐emitting materials through distance optimization. The far‐field effect is demonstrated to enhance device performance for materials in the full‐visible spectral range, which extends the optoelectric applications of Au NPs.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Optical properties of PMN–PT thin films prepared using pulsed laser deposition

(1 ? x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ (PMN–PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN–PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN–PT thin films. The results show that the PMN–PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN–PT thin films can be improved as increasing the annealing temperature to 750 °C, but further increasing the annealing temperature to 950 °C may lead to a degradation of the crystallinity and the optical properties of the PMN–PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN–PT thin film formed at the optimum annealing temperature of 750 °C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN–PT thin films.     

两库柏对相互作用问题的研究

在文中给出了库柏对的两种不同表达形式。发现用由对算符组成的哈密顿量来计算更方便,用这些对算符对易性质,而不是把它们看成费米子算符的组合产物。这样一来,研究的库柏对相互作用问题也把库柏对看成对算符。文中解决了两个库柏对相互作用问题,并讨论了推广到多库柏系统的情况。     

An Efficient Module for Full Adders in Quantum-dot Cellular Automata

Quantum-dot cellular automata (QCA), a new computing paradigm at nanoscale, may be a prospective alternative to conventional CMOS-based integrated circuits. Modular design methodology in QCA domain has not been widely investigated. In this paper, an efficient module with fault tolerance is proposed, which can be employed to fabricate three-input and five-input majority gates that are the fundamental primitives for designing circuits in QCA. With cells omission in the versatile module, various logic gates will be achieved, such as Nand-Nor-Inverter (NNI) gate and And-Or-Inverter (AOI) gate. Moreover, in order to seek out an efficient full adder, five various QCA full adders are designed and exhaustively compared in terms of area, complexity, latency, reliability and power dissipation and also compared with existing fault-tolerant full adders. Two simulation tools, QCADesigner and QCAPro, are utilized in the waveform simulations for verifying the correctness of proposed circuits and power consumption, respectively. The analysis results reveal that full adder V has significant improvements in contrast to its counterparts with above criteria. To test the practicability of full adder V, multi-bit adders will be designed in single-layer and compared with previous adders in terms of area, complexity and QCA cost, which proves the merits of our work.     

Phase formation and magnetic properties of Nd2Fe14B-type Nd16Co76B8−xCx alloys and their hydrides

An attempt is made to synthesize Nd₂Co₁₄C compound by mechanical alloying Nd₁₆Co₇₆B_8−xC_x (0x8) alloys and subsequent annealing. Phase formation and magnetic properties of Nd₂Fe₁₄B-type Nd₁₆Co₇₆B_8−xC_x alloys and their hydrides are investigated. The Nd₂Co₁₄(B,C) phase with Nd₂Fe₁₄B-type structure is formed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys, while NdCo₇C_δ phase with TbCu₇-type structure is observed in Nd₁₆Co₇₆C₈ alloy. The lattice parameter c of the Nd₂Co₁₄(B,C) phase decreases with increasing the carbon content. A limit volume of the unit cell to form the Nd₂Fe₁₄B-type structure is estimated to be 0.870 nm³. The spin-reorientation temperature T_SR increases with increasing the carbon content, due to an enhancement of magnetocrystalline anisotropy caused by carbon substitution for boron. After hydrogenation, the lattice expansion is observed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys. The spin-reorientation temperature of Nd₁₆Co₇₆B_8−xC_xH_y (0x7) is much lower than that of the host alloys. Some structural and magnetic properties of hypothetic Nd₂Co₁₄C and Nd₂Co₁₄CH_y compounds are estimated by extrapolation.     

La1/3Sr2/3Fe1-xCoxO3体系中的Co替代效应研究

本文通过对La1/3Sr2/3Fe1-xCoxO3系列样品进行X射线衍射(XRD)和变温电阻率(p～T)、比热(C～T)、磁化率(M～T)等测试,研究了Co掺杂对该系列样品的晶体结构和电热磁性质的影响.结果表明,随着Co掺杂量的增加,晶胞体积单调减小;电阻中电荷有序(charge ordering,CO)的特征逐渐消失.Co含量低的样品随着温度降低发生顺磁-反铁磁(PM-AFM)转变和金属-绝缘体(M-I)转变;Co含量高的样品则在磁转变温度以下表现出团簇玻璃型短程铁磁有序行为,并且在整个测量温区内具有金属导电特性.这些证明Co掺杂引起电子的局域化效应是导致体系电磁和输运行为发生变化的主要原因.     

O_2在FeN_4掺杂碳纳米管上氢化特性的密度泛函理论研究

因其速率快、稳定性高,非金属N与金属共掺杂的碳材料作为新型高效ORR催化剂而引起了人们的广泛关注.采用包含色散力校正的密度泛函理论方法系统地研究了氧分子在FeN_4掺杂的碳纳米管上的吸附、氢化特性.结果表明:(1)O_2倾向于以end-on模式吸附在Fe顶位,O-O键与衬底表面成一定角度,并指向五元环,对应的吸附能为1.62 e V.(2)O_2在FeN_4-CNTs上更倾向于直接氢化为OOH,然后解离为O+OH,整个路径的限速步为OOH的解离,对应的势垒为1.19 eV.