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311.
The nanocrystal samples of titanium dioxide doped with europium ion (Eu3+/TiO2 nanocrystal) are synthesized by the sol-gel method with hydrothermal treatment. The Eu3+ contents (molar ratio) in the samples are 0, 0.5%, 1%, 2%, 3% and 4%. The X-ray diffraction, UV-Vis spectroscopy data and scanning electron microscope image show that crystallite size is reduced by the doping of Eu3+ into TiO2. Comparing the Raman spectra of TiO2 with Eu3+/TiO2 (molar ratio Eu3+/TiO2=1%, 2% and 4%) nanocrystals at different annealing temperatures indicates that the anatase-to-rutile phase transformation temperatures of Eu3+/TiO2 nanocrystals are higher than that of TiO2. This is due to the formation of Eu-O-Ti bonds on the surface of the TiO2 crystallite, as characterized by the X-ray photoelectron spectroscopy. The photoluminescence spectra of TiO2 in Eu3+/TiO2 nanocrystals are interpreted by the surface self-trapped and defect-trapped exciton relaxation. The photoluminescence of Eu3+ in Eu3+/TiO2 nanocrystals has the strongest emission intensity at 2% of Eu3+ concentration.  相似文献   
312.
An improvement has been made to couple isoelectric focusing (IEF) sample injection and capillary zone electrophoresis in an untreated fused silica capillary. Electroosmotic flow is efficiently prevented by simply using a rubber block at the outlet end of the capillary during IEF sample injection. The experimental conditions that affect the concentration effect are discussed. A concentration enhancement factor of over 100-fold can be easily obtained for two model proteins: lysozyme and ribonuclease A.  相似文献   
313.
Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.  相似文献   
314.
王薇  张杰  赵刚 《物理学报》2006,55(1):287-293
利用辐射流体力学程序对三倍频纳秒激光与靶物质相互作用进行了模拟研究,得到了可以产生黑体辐射谱分布的激光等离子体X射线辐射靶的最佳厚度;数值模拟研究了黑体谱分布的X射线辐射场对等离子体系统平均离化度分布的影响,它有助于深入理解天体物理中吸积盘对它周围星际物质的离化影响. 关键词: 辐射流体力学 激光等离子体 X射线辐射 吸积盘 离化  相似文献   
315.
In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC  相似文献   
316.
研制了一台五通道ROSS-FILTER-PIN软X射线能谱仪,能谱范围为0.28—1.56keV.它由5个连续能段组成,每个能段的起止边由罗斯滤片对(ROSS-FILTERS)的L或K吸收边确定.罗斯滤片对的厚度通过优化计算得到,为了使每个通道的灵敏区外响应(即所测能段外响应)与通道总响应之比最小,在滤片对的第二滤片上镀上了一定厚度的第一滤片材料;为了缩减滤片表面积以增强低能滤片的抗冲击能力及方便滤片加工,能谱仪采用了小探测面积的PIN探测器(1mm2).借助此能谱仪,测量得到了喷气式Z箍缩(Z-pinch)等离子体辐射软X射线能谱的分布,并研究了软X射线产额随箍缩状况的变化趋势. 关键词: Z箍缩等离子体 罗斯滤片 软X射线能谱  相似文献   
317.
Let G be a graph and let Pm(G) denote the number of perfect matchings of G.We denote the path with m vertices by Pm and the Cartesian product of graphs G and H by G×H. In this paper, as the continuance of our paper [W. Yan, F. Zhang, Enumeration of perfect matchings of graphs with reflective symmetry by Pfaffians, Adv. Appl. Math. 32 (2004) 175-188], we enumerate perfect matchings in a type of Cartesian products of graphs by the Pfaffian method, which was discovered by Kasteleyn. Here are some of our results:1. Let T be a tree and let Cn denote the cycle with n vertices. Then Pm(C4×T)=∏(2+α2), where the product ranges over all eigenvalues α of T. Moreover, we prove that Pm(C4×T) is always a square or double a square.2. Let T be a tree. Then Pm(P4×T)=∏(1+3α2+α4), where the product ranges over all non-negative eigenvalues α of T.3. Let T be a tree with a perfect matching. Then Pm(P3×T)=∏(2+α2), where the product ranges over all positive eigenvalues α of T. Moreover, we prove that Pm(C4×T)=[Pm(P3×T)]2.  相似文献   
318.
张桂成  程宗权 《发光学报》1989,10(3):198-205
本文用AES研究了P-InP/TiPdAu热处理前后的界面特性,结果表明:TiPd层对Au的内扩散和In的扩散有阻挡作用。以TiPdAu作InGaAsP/InP双异质结发光管的p面电极、镀Au作热沉,采用In焊料,研究了器件的可靠性问题,在室温大气气氛中;70℃存储,70~80℃带电老化,三种条件下长时间考核结果表明:器件的I-V特性正常,末见正向压降明显变化。还比较了Au-Zn材料作p面电极用TiPdAu作肖脱基势垒限制层制成的器件和用TiPdAu作电极材料制成的深Zn扩散型器件在老化过程中的特性变化,后二种结构的器件,在长期老化过程中,有源区中有大面积DSD生长和增殖。  相似文献   
319.
A two-dimensional model for the simulation of a binary dendritic growth with convection has been developed in order to investigate the effects of convection on dendritic morphologies. The model is based on a cellular automaton (CA) technique for the calculation of the evolution of solid/liquid (s/l) interface. The dynamics of the interface controlled by temperature, solute diffusion and Gibbs–Thomson effects, is coupled with the continuum model for energy, solute and momentum transfer with liquid convection. The solid fraction is calculated by a governing equation, instead of some approximate methods such as lever rule method [A. Jacot, M. Rappaz, Acta Mater. 50 (2002) 1909–1926.] or interface velocity method [L. Nastac, Acta Mater. 47 (1999) 4253; L. Beltran-Sanchez, D.M. Stefanescu, Mat. and Mat. Trans. A 26 (2003) 367.]. For the dendritic growth without convection, mesh independency of simulation results is achieved. The simulated steady-state tip velocity are compared with the predicted values of LGK theory [Lipton, M.E. Glicksmanm, W. Kurz, Metall. Trans. 18(A) (1987) 341.] as a function of melt undercooling, which shows good agreement. The growth of dendrite arms in a forced convection has been investigated. It was found that the dendritic growth in the upstream direction was amplified, due to larger solute gradient in the liquid ahead of the s/l interface caused by melt convection. In the isothermal environment, the calculated results under very fine mesh are in good agreement with the Oseen–Ivanstov solution for the concentration-driven growth in a forced flow.  相似文献   
320.
The electronic structures of PbWO4 crystals containing F type color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Direc–Slater theory, using a numerically discrete variational (DV-Xα) method. The calculated results show that F and F+ centers have donor energy level in forbidden band. Their optical transition energy are 1.84 eV, 2.21 eV, respectively, which corresponds to the 680 nm, 550 nm absorption bands. It predicts that the 680 nm, 550 nm absorption bands originate form the F and F+ centers in PbWO4 crystals.  相似文献   
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