Observation of large low‐field magnetoresistance in spinel cobaltite: A new half‐metal

Low‐field magnetoresistance is an effective and energy‐saving way to use half‐metallic materials in magnetic reading heads and magnetic random access memory. Common spin‐polarized materials with low field magnetoresistance effect are perovskite‐type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self‐assembled nanocrystalline NiCo₂O₄, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin‐glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half‐metallicity of NiCo₂O₄ comes from the hopping e_g electrons within the tetrahedral Co‐atoms and the octahedral Ni‐atoms. The discovery of large low‐field magnetoresistance in simple spinel oxide NiCo₂O₄, a non‐perovskite oxide, leads to an extended family of low‐field magnetoresistance materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

基于拉锥结构的全光纤型内窥OCT探针研究

本文报道了一种基于拉锥结构的全光纤型内窥光学相干层析成像探针. 基于大纤芯多模光纤的低光束发散特性, 使用大纤芯多模光纤代替透镜作为成像元件, 并在单模光纤与大纤芯多模光纤之间引入过渡拉锥段以减少插入损耗. 首先利用光学仿真软件(Rsoft)确定探针的最佳结构, 然后通过拉锥、切割以及熔接工艺实现探针制作, 并对探针的出射光束特性与插入损耗进行测量, 最后将该探针与扫频光学相干层析成像主系统联机, 对人体指尖皮肤及鸡气管壁组织进行成像. 该探针直径为250 μm, 不锈钢保护管外径为325 μm, 硬端长度1 cm, 插入损耗约为0.3 dB, 空气中有效成像范围达800 μm. 该探针为内窥光学相干层析成像技术在心血管疾病的应用提供了高紧凑度、高传输效率与高灵活性的选择.     

基于智能手机的眼底成像系统

眼底成像技术可检测临床视网膜组织状态,其检测结果已成为多种眼底疾病诊断的重要依据。然而,传统的眼底成像系统需要专业医护人员操作,且具有体积大、价格昂贵等缺点。随着智能手机的图像采集、存储、数据传输等功能的不断提升,基于智能手机的眼底成像系统可有效弥补传统眼底成像系统的上述缺陷。在本研究中,我们设计了照明和成像光路并利用3D打印技术将其小型化,通过与智能手机相结合实现了对人眼视网膜图像的采集。结果表明,基于智能手机的眼底相机距离模拟眼的工作距离约为17 mm,安置于体积仅为88 mm×79 mm×42 mm(长×宽×高)的手机外设配件中。随后,利用Zemax对系统光学参数进行了进一步优化。经优化后的成像系统,畸变保持在0. 2%范围内,场曲小于10μm。该系统具有便携性良好、无创、价格低廉等优点,未来可用于多种眼底疾病的社区筛查工作。     

Temperature Dependence of In-plane Resistivity and Inverse Hall Angle in NLED Holographic Model

In the strange metal phase of the high-Tc cuprates, it is challenging to explain the linear temperature dependence of the in-plane resistivity and the quadratic temperature dependence of the inverse Hall angle. In this paper, we investigate the temperature dependence of the in-plane resistivity and inverse Hall angle in the nonlinear electrodynamics holographic model developed in our recent work. Maxwell electrodynamics and Born-Infeld electrodynamics are considered. Both cases support a wide spectrum of temperature scalings in parameter space. For Maxwell electrodynamics, the T-linear in-plane resistivity generally dominates at low temperatures and survives into higher temperatures in a narrow strip-like manner. Meanwhile, the T-quadratic inverse Hall angle dominates at high temperatures and extends down to lower temperatures. The overlap between the T-linear in-plane resistivity and the T-quadratic inverse Hall angle, if occurs, would generally present in the intermediate temperate regime. The Born-Infeld case with a 0 is quite similar to the Maxwell case. For the Born-Infeld case with a 0, there can be a constraint on the charge density and magnetic field. Moreover, the overlap can occur for strong charge density.     

多个量子节点确定性纠缠的建立

量子纠缠是一种重要的量子资源,在多个空间分离的量子存储器间建立确定性的量子纠缠,然后在用户控制的时刻将所存储的量子纠缠转移到量子信道中进行信息的分发和传送,这对于实现量子信息网络是至关重要的.本文介绍了用光学参量放大器制备与铷原子D1吸收线对应的非经典光场,而且在三个空间分离的原子系综中确定性量子纠缠的产生、存储和转移.利用电磁感应透明光和原子相互作用的原理,将制备的多组分光场纠缠态模式映射到三个远距离的原子系综以建立原子自旋波之间的纠缠.然后,存储在原子系综中的纠缠态通过三个量子通道,纠缠态的量子噪声被转移到三束空间分离的正交纠缠光场.三束释放的光场间纠缠的存在验证了该系统具有保持多组分纠缠的能力.这个方案实现了三个量子节点间的纠缠,并且可以直接扩展到具有更多节点的量子网络,为未来实现大型量子网络通信奠定了基础.     

静止无功补偿器和发射器在电弧炉动态无功补偿系统中的应用

发展高效绿色电炉冶炼技术是淘汰落后产能、钢铁产业调整升级的重要举措。电弧炉作为核心生产设备,防止其生产运行中无功冲击造成的电压跌落至关重要。而目前单一的有源、无源补偿方式无法同时满足电弧炉负荷日益增长的大容量且快速响应的无功补偿需求。研究了静止无功补偿器(SVC)和静止无功发射器(SVG)相结合的混联补偿方式,分析了SVC在分相不平衡大容量补偿及SVG在无功快速响应方面中的特性,并针对某钢厂电弧炉工作运行情况,计算其无功需求,充分利用其原有的SVC装置,设计混联SVG方案来抵消剩余无功缺口,使用PSCAD/EMTDC进行了联合应用仿真,证实其理论有效性。     

激光刻蚀对镀金表面二次电子发射的有效抑制

使用红外激光刻蚀技术在镀金铝合金表面制备了多种形貌的微孔及交错沟槽阵列.表征了两类激光刻蚀微阵列结构的三维形貌和二维精细形貌,分析了样品表面非理想二级粗糙结构的形成机制.研究了微阵列结构二次电子发射特性对表面形貌的依赖规律.实验结果表明:激光刻蚀得到的微阵列结构能够有效抑制镀金表面二次电子产额(secondary electron yield,SEY),且抑制能力明显优于诸多其他表面处理技术;微阵列结构对SEY的抑制能力与其孔隙率及深宽比呈现正相关,且孔隙率对SEY的影响更为显著.使用蒙特卡罗模拟方法并结合二次电子发射唯象模型和电子轨迹追踪算法,仿真了各微结构表面二次电子发射特性,模拟结果从理论上验证了微阵列结构孔隙率及深宽比对表面SEY的影响规律.本文获得了能够剧烈降低镀金表面SEY的微阵列结构,理论分析了SEY对微结构特征参数的依赖规律,对开发空间微波系统中低SEY表面及提高镀金微波器件性能有重要意义.     

二维解卷积波束形成水下高分辨三维声成像

针对水下三维成像的空间分辨率难以提高,且具有较高旁瓣级的问题,提出了一种二维解卷积波束形成高分辨三维声成像算法,该算法首先完成任意距离切片的平面阵波束形成,近场情况下采用菲涅尔近似实现近场平面阵波束形成,然后通过二维解卷积技术对任意距离切片的二维波束形成结果进行解卷积处理,去除阵列指向性函数的影响,改善波束响应非理想冲击函数所造成波束形成主瓣宽及旁瓣级高的问题。通过计算机仿真分析,新算法可以有效的提高水下三维成像的空间分辨率,抑制旁瓣级,并能够在较宽频带和不同阵列孔径内保持与常规波束形成相当的稳定性。通过试验研究,新方法比常规波束形成实际目标成像分辨率提高一倍,最高旁瓣级下降20 dB,验证了该算法在实际系统中的有效性.     

Structure transition and photoluminescence of CdS/Si nanoheterostructure array on thermal annealing

CdS/Si heterojunctions have been prepared through growing CdS nanocrystallites (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) by the chemical bath deposition method. Cadmium nanocrystallites (nc-Cd) have been observed and ascribed to the reducibility of Si-NPA. The reason for the appearance of CdO is indistinct and the related work will be done in the future. The blue, green and red emissions are ascribed to the silicon oxide layer, band gap of nc-CdS and the sulphur vacancies, respectively. Redshift and blueshift with the annealing temperature about green emissions are contributed to quantum size effect and the structure transition from nc-Cd to CdO. It is beneficial for investigating the structures and defects to the application of CdS/Si in the optoelectronic field.     

Security of continuous-variable measurement-device-independent quantum key distribution with imperfect state preparation

The state preparation operation of continuous-variable measurement-device-independent quantum key distribution (CV-MDI-QKD) protocol may become imperfect in practical applications. We address the security of the CV-MDI-QKD protocol based on imperfect preparation of the coherent state under realistic conditions of lossy and noisy quantum channel. Specifically, we assume that the imperfection of Alice's and Bob's practical state preparations equal to the amplification of ideal modulators and lasers at both Alice's and Bob's sides by untrusted third-parties Fred and Gray employing phase-insensitive amplifiers (PIAs), respectively. The equivalent excess noise introduced by the imperfect state preparation is comprehensively and quantitatively calculated by adopting the gains of PIAs. Security analysis shows that CV-MDI-QKD is quite sensitive to the imperfection of practical state preparation, which inevitably deteriorates the performance and security of CV-MDI-QKD system. Moreover, a lower bound of the secret key rate is derived under arbitrary collective attacks, and the upper threshold of this imperfection tolerated by the system is obtained in the form of the specific gains of PIAs. In addition, the methods presented will improve and perfect the practical security of CV-MDI-QKD protocol.