纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

Low-Temperature Magnetic Properties of Co Antidot Array

Cobalt antidot arrays with different thicknesses are fabricated by rf magnetron sputtering onto porous alumina substrates. Scanning electron microscopy and grazing incidence x-ray diffraction are employed to characterize the morphology and crystal structure of the antidot array, respectively. The temperature dependence of magnetic properties shows that in the temperature range 5K--300K, coercivity and squareness increase firstly, reach their maximum values, then decrease. The anomalous temperature dependences of coercivity and squareness are discussed by considering the pinning effect of the antidot and the magnetocrystalline anisotropy.     

丝绸之路多元文化交融的活化石——艾德莱斯绸

主要介绍了丝绸之路上多元文化的典型代表——艾德莱斯绸.文章重点介绍了艾德莱斯绸的历史和传说,扎经染色工艺,各类艾德莱斯绸的特点及典型的艾德莱斯绸图案.     

广义分解定理与两个不等式

本文给出了Banach空间广义分解定理的一个初等证明,并利用它来证明两个对称不等式.这是首次在Banach空间获得这样的不等式.     

Investigation of Scale Exponents of Complete and Incomplete Aggregation-Annihilation Processes

The complete and incomplete aggregation-annihilation processes are investigated with the method of generating function, and the scale exponents are obtained exactly. We find that the scale exponents of incomplete aggregation-annihilation process are different from the previous exponents obtained by different methods. The time dependence of the total number of clusters and the total mass of clusters are analytically obtained.     

长江堤防工程地质信息处理模型及技术方法

长江中下游的主要防洪工程是长江干堤 ,长江堤防线路长、工程浩大、堤基工程地质水文地质条件复杂 ,涉及大量的已有地质数据和资料。今后在整治加固堤防的工程地质勘察工作中 ,还需随时进行数据的收集、存储、检索、分析、统计和维护 ,随时调用这些数据进行综合处理、编制报告和图件 ;在防汛期间可以针对堤防险工险段的险情 ,随时查询和调用有关的资料、数据或者图件 ,提供采取抢险措施决策的地质依据。这既提高了地质数据的利用价值和利用率 ,又保证了信息的准确性、完整性和共享性。因此 ,建立合理的长江堤防工程地质信息处理模型及其成熟的技术方法具有重要的意义。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

一种基于能带工程设计的CaAsSb/InP异质结双极晶体三极管

异质结晶体三极管（HBT）的性能与其材料体系密不可分，利用能带工程可以大大优化器件的结构，提高器件性能，文章从分析HBT的能带结构及设计要求入手，介绍了一种利用能带工程设计的基于GaAsSb/InP材料体系的新型HBT器件的结构及其性能，分析了该器件与其它材料体系器件相比所具有的优异特性，说明了对HBT的各区材料，其带边的相对位置所起的重要作用，最后，文章还报道了近期的实验情况，说明了GaAsSb/InP体系HBT的实际性能与理论预言一致。