Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引 关键词： 原子层淀积 AlGaN/GaN MOS-HEMT器件 温度特性     

晶粒棱长、尺寸与拓扑学特征之间关系的Monte Carlo仿真研究

采用Potts模型Monte Carlo方法研究了晶粒棱长、尺寸与拓扑学特征之间的统计关系.结果表明,晶粒棱长与晶粒面数之间呈线性统计关系,并且平均N面体晶粒模型和Poisson-Voronoi组织均支持该结论.不同时刻的晶粒长大仿真数据表明,在准稳态晶粒长大阶段晶粒棱长的分布具有自相似性.个体晶粒的平均棱长随晶粒面数（或晶粒尺寸）的增加而逐渐增大,这说明一些理论模型中采用的“不同面数的晶粒平均棱长均相等”的假设具有局限性.仿真数据和纯铁实验数据均表明,晶粒尺寸与晶粒面数之间的统计关系表现为一条单调递增的凸曲线. 关键词： 晶粒棱长 晶粒尺寸 拓扑学 Monte Carlo仿真     

利用电导率测量方法研究不同粒径ZnS高压相变过程

利用在金刚石对顶砧上集成的金属电极,对不同粒径的ZnS材料进行了高压原位电导率测量. 粒径为2 μm的体材料ZnS在15 GPa时,电导率迅速增大5个数量级,表明体材料ZnS此时发生了从闪锌矿到岩盐矿的结构相变. 而粒径6 nm的纳米材料ZnS的结构相变压力为21 GPa. 电导率测量结果还表明纳米 ZnS比体材料ZnS还具有更宽的迟滞区间.     

铽-芳香化合物-丁二酸发光配合物的合成及性能

以苯甲酸及其衍生物为第一配体、丁二酸为第二配体,在非水性溶剂条件下合成了6种新的铽三元荧光配合物。利用元素分析、EDTA配位滴定分析、红外光谱和紫外吸收光谱分析对目标物的组成与结构进行了表征,并研究了其发光性能和热稳定性。结果表明:丁二酸的引入显著地加强了各第一配体向中心铽离子传递能量的能力,其传递能量的顺序为:对氯苯甲酸＞间氯苯甲酸＞大茴香酸＞对甲基苯甲酸＞苯甲酸＞对羟基苯甲酸。目标配合物与其相对应的二元配合物比较荧光强度有了显著的提高。     

Laser-induced changes in titanium by femtosecond,picosecond and millisecond laser ablation

In order to realize the qualitative control of the laser-induced changes trend and the quantitative control of the laser-induced changes range in titanium upon laser irradiation with different pulse duration, comparative ablation experiments by femtosecond, picosecond and millisecond pulsed lasers were carried out on titanium in this study. Then the final surface morphology, aspect ratio, chemical composition and microstructural state of the ablated titanium were analyzed by laser scanning confocal microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy, respectively. The dependency of the morphology, size, composition and microstructure of ablated titanium on laser pulse duration variation were emphatically discussed. It is found that, as the laser pulse duration increases from femtosecond to millisecond scale, surface morphology quality of ablated titanium gets worse, aspect ratio of microgroove decreases, proportion of titanium oxides in final ablation products becomes larger and the microstructural state of ablated titanium has a higher amorphization degree, which can be attributed to the decreased laser intensity per pulse and enhanced heat conduction effect in titanium with the pulse duration increasing.     

基于国产CPU的并行冗余计算机系统研究

目前国家不断推进的国产自主可控信息系统建设,其核心国产计算机系统由于技术成熟度低、市场推广晚等原因,暴露出可靠性低、稳定性差的问题,直接导致系统功能无法成功应用。围绕国产化计算机系统的并行冗余架构开展研究,通过计算机系统架构的软硬件设计,以及高速缓存一致性架构、高速互联总线和三状态转换机制方法的应用,基于国产CPU 并行冗余计算机系统,可以有效消除备份计算机系统进行当班切换时,存在的切换时间延时和切换过程数据丢失的问题。通过试验验证,该系统可以完成计算机系统中CPU处理器和功能桥片故障模式的容错处理,并保障信息数据的完整性和实时性,有效提高设备中计算机系统的工作可靠性与稳定性。     

甲虫与橡胶带问题的延伸话题

讨论甲虫与气球、甲虫在可伸缩曲线上的运动以及星系间的航行等问题.     

二维映射神经元模型中的相干双共振

在具有稳定次阈值振荡特性的二维映射神经元模型中,研究了在没有外界输入信号时噪声对体系动力学的影响.通过数值计算发现了当体系的确定性动力学处于静息状态时,噪声可以诱导出神经元膜电位的随机振荡,而且随着噪声强度的变化,这种振荡的相干性具有两个极大值.另外我们还研究了当体系的确定性动力学处于稳定次阈值振荡及神经脉冲状态时的噪声效应,结果表明噪声对体系动力学的影响与其确定性动力学的分岔特性密切相关.     

Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory

As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.     

Electrical control of antiferromagnetic metal up to 15 nm

Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.