High volumetric hydrogen density phases of magnesium borohydride at high-pressure: A first-principles study

The previously proposed theoretical and experimental structures,bond characterization,and compressibility of Mg(BH 4) 2 in a pressure range from 0 to 10 GPa are studied by ab initio density-functional calculations.It is found that the ambient pressure phases of meta-stable I4 1 /amd and unstable P-3m1 proposed recently are extra stable and cannot decompose under high pressure.Enthalpy calculation indicates that the ground state of F 222 structure proposed by Zhou et al.[2009 Phys.Rev.B 79 212102] will transfer to I4 1 /amd at 0.7 GPa,and then to a P-3m1 structure at 6.3 GPa.The experimental P 6 1 22 structure(α-phase) transfers to I4 1 /amd at 1.2 GPa.Furthermore,both I4 1 /amd and P-3m1 can exist as high volumetric hydrogen density phases at low pressure.Their theoretical volumetric hydrogen densities reach 146.351 g H 2 /L and 134.028 g H 2 /L at ambient pressure,respectively.The calculated phonon dispersion curve shows that the I4 1 /amd phase is dynamically stable in a pressure range from 0 to 4 GPa and the P-3m1 phase is stable at pressures higher than 1 GPa.So the I4 1 /amd phase may be synthesized under high pressure and retained to ambient pressure.Energy band structures show that they are both always ionic crystalline and insulating with a band-gap of about 5 eV in this pressure range.In addition,they each have an anisotropic compressibility.The c axis of these structures is easy to compress.Especially,the c axis and volume of P-3m1 phase are extraordinarily compressible,showing that compression along the c axis can increase the volumetric hydrogen content for both I4 1 /amd and P-3m1 structures.     

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.     

Electro-optic mapping systems of electric-field using CW laser diodes

Two novel systems are proposed to perform the electro-optic (EO) mapping of the electric-field strength close to electrode structure using CW laser diodes. By these systems, mappings of both static (DC) and high-frequency electric-field can be obtained. For the static field, the field is chopped to increase the sensitivity performance. For the high-frequency field, an intensity modulation laser, instead of a pulse laser, is used to perform the mapping measurement in frequency domain, instead of in time domain. This approach greatly simplifies the system. An experiment set-up using a vertical cavity surface emitted laser diode (VCSEL) of a wavelength 850 nm and its mapping results for a coplanar waveguide (CPW) with the signal frequency around 1 GHz are reported.     

大面积α-Fe2O3纳米线及纳米带阵列的制备研究

以铁箔为原材料和基片,通过控制热氧化过程中的宏观实验条件(载气流量及其组分、压强、温度分布和反应时间等),实现了α-Fe₂O₃一维纳米结构的可控生长,获得了大面积(10mm×10mm)、单分散性好、沿［110］方向生长的α-Fe₂O₃纳米带或纳米线阵列. 对不同宏观实验条件下所制备的样品进行形貌和晶格结构表征和分析,认为热氧化过程中α-Fe₂O₃一维纳米结构的生长遵循类似气- 关键词： 2O₃')" href="#">α-Fe₂O₃ 一维纳米结构 热氧化法     

YGG:Cr3+低温常压下的能谱及g因子理论计算

采用对角化由强场方案和无耦合的三角基建立的三角畸变八面体场中的d3离子完全能量矩阵,对YGG:Cr3+在低温常压下的能谱及波函数进行了拟合计算,并分析了各参数对部分能级的影响,定量地显示了能级分裂的影响因素。同时,使用对角化完全能量矩阵所获得的基态波函数,进一步计算了YGG:Cr3+的基态g因子。各项计算结果均与实验符合很好。     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.

     

Centrality dependence of charged-hadron transverse-momentum spectra in d+Au collisions at sqrt[s(NN)]=200 GeV

We have measured transverse momentum distributions of charged hadrons produced in d+Au collisions at sqrt[s(NN)]=200 GeV. The spectra were obtained for transverse momenta 0.25相似文献   

多极板电流变阀应用于避震器之研究

以流动模式（flow mode)多极板之电流变阀（electrorheological valve)进行避震器阻尼力特性的研究。由于电极板的大小直接影响到流体流动的剪力及避雷器的阻尼力,因此使用多极板型式来探讨避震器的特性。设计有1－5个流道之并联及1－3个流道之串联多极板电流变阀的电流变避震器,并使用自制的电流变液进行实验。由研究结果显示,流动式并联极板之电流变避震器,一个流道之阻尼力最大,流道极板增加则阻尼力反而下降,而流动式串联多极板之电流变避震器之阻尼力则随极板数递增,故需要高阻尼力之避震器较适合使用串联多极板型式。     

Two-Phase Closed-Loop Thermosyphon for Electronic Cooling

This study experimentally investigated the thermal performance of a two-phase closed-loop thermosyphon with a thermal resistance model for electronic cooling. The evaporator, rising tube, condenser, and falling tube, which are the four main devices, formed a closed-loop system with water as the working fluid. The experimental parameters were the evaporator surface type, fill ratio of working fluid, and input heating power. The results indicated that the evaporator and condenser thermal resistance decrease with increasing input heating power. The condenser thermal resistance clearly increased with increasing fill ratio. A groove-type evaporator surface with 0.2 mm height and 1 mm width had the best performance, decreasing the evaporator thermal resistance about 15.5% compared to a smooth surface. Correlations for evaporator and condenser thermal resistance were also developed, and their precisions, when compared with the experimental data, were about 9.6 and 11.6%, respectively. Because of the intermittent boiling mechanism at 47% fill ratio with input heating power from 60 to 80 W, the temperature showed obvious oscillations with the smooth evaporator surface.