Remaining Useful Life Prediction Model for Rolling Bearings Based on MFPE–MACNN

Aiming to resolve the problem of redundant information concerning rolling bearing degradation characteristics and to tackle the difficulty faced by convolutional deep learning models in learning feature information in complex time series, a prediction model for remaining useful life based on multiscale fusion permutation entropy (MFPE) and a multiscale convolutional attention neural network (MACNN) is proposed. The original signal of the rolling bearing was extracted and decomposed by resonance sparse decomposition to obtain the high-resonance and low-resonance components. The multiscale permutation entropy of the low-resonance component was calculated. Moreover, the locally linear-embedding algorithm was used for dimensionality reduction to remove redundant information. The multiscale convolution module was constructed to learn the feature information at different time scales. The attention module was used to fuse the feature information and input it into the remaining useful life prediction module for evaluation. The appropriate network structure and parameter configuration were determined, and a multiscale convolutional attention neural network was designed to determine the remaining useful life prediction model. The results show that the method demonstrates effectiveness and superiority in degrading the feature information representation and improving the remaining useful life prediction accuracy compared with other models.     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

129Xe30+与Au作用激发的Au M-X射线 与Xe L-X射线

探测了动能为1.0——7.0 MeV的¹²⁹Xe³⁰⁺ 入射Au表面产生的X射线谱. 实验结果表明, 入射离子动能较高时, 不仅激发出很强的Au的M-X射线, 还激发出了Xe的L-X射线, 且X射线产额与入射离子动能有强相关性. 分析了X射线产额与入射离子动能的关系.     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

混合物质高压状态方程的计算

 介绍了在温度相同的条件下,混合物中各组元通过密度-压强迭代法,达到温度和压强平衡,再结合叠加原理,编程计算出混合物质状态方程。为验证该程序,对氘氚与氩按不同比例混合时的状态参量进行了分析。当氘氚中含少量氩时,计算得到的状态方程与纯氘氚符合较好;同样地,氩中含少量氘氚时的状态方程也与纯氩的很接近。这说明该程序是可行的。     

8字形主被动锁模掺Er3+光纤激光器

在理论上分析了利用非线性光学环形镜作为等效可饱和吸收体压缩脉冲进行锁模的物理机制。利用8字形主被动混合锁模的结构在调制频率2．498749GHz下，在1．543μm处获得了12ps的锁模脉冲输出，对应谱宽0．22nm，时间脉宽积0．33。在抽运功率50mW情况下，输出脉冲平均功率3．715mW。在调制频率2．499344GHz、2．499114GHz和2．498999GHz时分别并获得了2～4阶幅度较为均衡的有理数谐波锁模脉冲序列。     

外腔反馈对半导体激光器振荡特性的影响

通过有效反射系数的引入，根据激光谐振腔的自再现条件和对腔内光子密度、载流子密度方程的求解，分析了外腔反馈对半导体激光器的阈值增益、振荡频率和输出功率等振荡特性的影响，并通过实验进行了验证.外腔反馈后，半导体激光器的阈值电流从420mA降为370mA，输出功率的斜率效率获得了提高，理论计算的输出功率曲线与实验结果符合的很好. 关键词： 半导体激光器 外腔反馈 振荡特性     

金属纳米颗粒的热导率

本文使用统计模拟方法对金属纳米颗粒的电子平均自由程进行了计算,并考察了纳米颗粒的晶格比热和声子平均群速度,最后应用动力学理论对纳米颗粒的电子热导率和声子热导率分别进行了求解.研究结果表明:具有相同特征尺寸的方形、球形纳米颗粒的无量纲电子(或声子)平均自由程比较接近.金属纳米颗粒的电子热导率远大于声子热导率;电子、声子热导率随着直径减小呈现降低趋势,而电子热导率的颗粒尺度依赖性比声子热导率更为明显;随着颗粒直径进一步减小,声子热导率与电子热导率趋于同一数量级.当纳米颗粒特征尺寸大于4倍块材电子(或声子)平均自由程,其电子(或声子)热导率的颗粒尺度依赖性将减弱.