Hybrid reordering strategies for ILU preconditioning of indefinite sparse matrices

Incomplete LU factorization preconditioning techniques often have difficulty on indefinite sparse matrices. We present hybrid reordering strategies to deal with such matrices, which include new diagonal reorderings that are in conjunction with a symmetric nondecreasing degree algorithm. We first use the diagonal reorderings to efficiently search for entries of single element rows and columns and/or the maximum absolute value to be placed on the diagonal for computing a nonsymmetric permutation. To augment the effectiveness of the diagonal reorderings, a nondecreasing degree algorithm is applied to reduce the amount of fill-in during the ILU factorization. With the reordered matrices, we achieve a noticeable improvement in enhancing the stability of incomplete LU factorizations. Consequently, we reduce the convergence cost of the preconditioned Krylov subspace methods on solving the reordered indefinite matrices.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜光学吸收强度随薄膜厚度的增加而增强.但当金属颗粒的浓度增加到一定程度时,金属颗粒相互接触,没有观察到纳米层状结构,薄膜不显示共振吸收峰特征.用修正后的M-G(Maxwell-Garnett)理论对吸收光谱进行了模拟,得到了与实验一致的结果.     

铝互连线的电迁移问题及超深亚微米技术下的挑战

铝互连线的电迁移问题历来是微电子产业的研究热点，其面临的电迁移可靠性挑战也是芯片制造业最持久和最重要的挑战之一.从20世纪90年代开始，超深亚微米(特征尺寸≤0.18 μm)铝互连技术面临了更加复杂的电迁移可靠性问题.从电迁移理论出发，分析概括了铝互连电迁移问题的研究方法，总结了上世纪至今关于铝互连电迁移问题的主要经验；最后结合已知的结论和目前芯片制造业现状，分析了当前超深亚微米铝互连线电迁移可靠性挑战的原因和表现形式，提出了解决这些问题的总方向. 关键词： 电迁移 铝互连 微结构     

下料问题的优化模型及其快速算法

结合生产实际中具体的下料问题,本文建立了该类问题的优化模型,并提出下料方式的遴选三准则,即高利用率优先准则,长度优先准则和时间优先准则.运用本文的算法对一维下料的利用率高达99.6%,机器时间4秒.对二维的利用率为98.9%,机器时间约7秒.     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

溴酸钾-亚甲蓝催化光度法测定硝酸盐和亚硝酸盐

用镉柱将NO-3 还原为NO-2 ,利用在磷酸介质中NO-2 对溴酸钾氧化亚甲蓝这一褪色反应具有强烈的催化作用而建立了同时测定痕量硝酸盐和亚硝酸盐的新方法。本方法简便、快速、灵敏 ,对亚硝酸盐和硝酸盐测定的线性范围分别为 0～ 2 0 0 μg·L-1和 0 0 0 3～ 310 μg·L-1,用于测定各种水样中痕量NO-2 和NO-3 的含量均获得满意结果     

直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

Bounds on the maximum numbers of clear two-factor interactions for 2^{(n_1 + n_2 ) - (k_1 + k_2 )} fractional factorial split-plot designs

Fractional factorial split-plot (FFSP) designs have an important value of investigation for their special structures. There are two types of factors in an FFSP design: the whole-plot (WP) factors and sub-plot (SP) factors, which can form three types of two-factor interactions: WP2fi, WS2fi and SP2fi. This paper considers FFSP designs with resolution III or IV under the clear effects criterion. It derives the upper and lower bounds on the maximum numbers of clear WP2fis and WS2fis for FFSP designs, and gives some methods for constructing the desired FFSP designs. It further examines the performance of the construction methods.     

高电荷态离子207Pbq+(24≤q≤36)与Si(110)固体表面作用的电子发射研究

报道了利用兰州重离子加速器国家实验室ECR源引出的高电荷态离子207Pbq+(24≤q≤36)入射到Si(110)表面产生的电子发射的实验测量结果.结果表明,高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联.首次发现,电子发射产额Y与入射角度ψ间有接近1/tanψ的关系.理论分析认为,这些过程与基于经典过垒模型的势能电子发射过程密切相关.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).