Fermionic perturbation theory for the statistical mechanics of the nonlinear Schrödinger model

A fermionic perturbation theory is developed for the statistical mechanics of the nonlinear Schrödinger model. The theory is based on an interacting-fermion picture of the Bethe wave function. The inner product of the Bethe wave function is explicitly evaluated, and a simple graphical representation of it is given. The basic equations obtained for the free energy agree with those of Yang and Yang. In particular, the present theory gives a clear-cut meaning to the function of Yang and Yang: It represents a fermion energy at finite temperatures.     

离子浓度及表面结构对岩石孔隙内水流动特性的影响

酸性环境引发的岩石孔隙表面溶解增加了孔隙内水溶液的盐离子浓度,破坏了孔隙的表面结构.本文采用分子动力学模拟的方法研究了纳米级岩石孔隙内水溶液的流动特性,分析了盐离子浓度和孔隙表面结构对水流速度分布的影响及原因.研究结果表明:纳米级岩石孔隙内的水溶液流动符合泊肃叶流动特性,流速呈"抛物线"分布;随盐离子浓度增加,水溶液内部氢键网络变得更为致密,水黏度随其呈线性增长;水溶液中离子浓度越大,孔隙表面对水流动的阻力越大,最大流速越小,速度分布的"抛物线"曲率半径越大;岩石孔隙表面结构的破坏改变了流动表面的粗糙程度,增加了孔隙表面对H2O分子的吸引力.随表面结构破坏程度的增大,水溶液在近壁区域的密度增大,流速降低;当表面破坏程度达到50%时,水溶液在近壁区域出现了明显的负边界滑移现象.     

Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT)

This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm²/Vs and a current on/off ratio of 10⁷. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photovoltaic performance of flexible Cu(In,Ga)Se2 thin-film solar cells with varying Cr impurity barrier thickness

We report the effect of Cr impurity barrier on Cu(In,Ga)Se₂ (CIGS) thin-film solar cells prepared on flexible substrates. The Cr films with varying the thickness (t_Cr) were deposited on stainless steel substrates using direct-current magnetron sputtering. The solar cell performance was improved by increasing t_Cr since the diffusion of Fe impurities from the substrate to CIGS was suppressed. Although the elemental composition, grain size, and strain of CIGS film showed little change with varying Fe content, the fill factor and the short-circuit current density increased as decreasing Fe. The Fe increased the series resistance, shunt paths, and saturation current density. The reduction of Fe caused a steeper bandgap grading in CIGS which enhances current collection due to higher electric fields in bulk CIGS. CIGS solar cells with 1000 nm-thick Cr barrier showed the best conversion efficiency of 9.05%.     

Diffusion tensor parameters and principal eigenvector coherence: Relation to b-value intervals and field strength

Diffusion-weighted MRI images acquired at b-value greater than 1000 s mm^− 2 measure the diffusion of a restricted pool of water molecules. High b-value images are accompanied by a reduction in signal-to-noise ratio (SNR) due to the application of large diffusion gradients. By fitting the diffusion tensor model to data acquired at incremental b-value intervals, we determined the effect of SNR on tensor parameters in normal human brains, in vivo. In addition, we also investigated the impact of field strength on the diffusion tensor model. Data were acquired at 1.5 and 3 T, at b-values 0, 1000, 2000 and 3000 s mm^− 2 in twenty diffusion-sensitised directions. Fractional anisotropy (FA), mean diffusivity (MD) and principal eigenvector coherence (κ) were calculated from diffusion tensors fitted between datasets with b-values 0–1000, 0–2000, 0–3000, 1000–2000 and 2000–3000 s mm^− 2. Field strength and b-value effects on diffusion parameters were analysed in white and grey matter regions of interest. Decreases in FA, κ and MD were found with increasing b-value in white matter. Univariate analysis showed a significant increase in FA with increasing field strength in highly organised white matter. These results suggest there are significant differences in diffusion parameters at 1.5 and 3 T and that the optimal results, in terms of the highest values of FA in white matter, are obtained at 3 T with a maximum b = 1000 s mm^− 2.     

Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures

Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band discontinuity at the interface between AlGaN and GaN, the temperature dependence of transconductance for AlGaN/GaN heterojunction field effect transistors (HFETs) has been obtained by using a quasi-two-dimensional approach, and the calculated results are in good agreement with the experimental data. The reduction in transconductance at high temperatures is primarily due to the decrease in electron mobility in the channel. Calculations also demonstrate that the self-heating effect becomes serious as environment temperature increases.     

Investigation of the Doughnut Effect in Cy3-Labeled Protein Microarrays using Scanning Near-Field Optical Microscope

We demonstrate the fluorescence mapping of protein microarrays by the technique of scanning near-field optical microscopy (SNOM) and confocal microscopy. Micron sized spots (300 μm) of human Immunoglobulin G (hIgG) protein with and without a Cy3 dye labeling have been fabricated on glass substrates by an immobilization method which makes use of calixcrown derivatives termed Prolinker. We have also tried to probe into the well-known “doughnut effect” observed in fluorescence images of proteins using the SNOM technique. The topographic and fluorescence SNOM images revealed that the number of proteins at the boundary of the spot were more than at the center in the case of the microarray spot which showed brighter luminescence at the edge than at the center in the confocal image.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.