HL-2M 真空室保温层设计及安装

基于 HL-2M 真空室烘烤保温要求,通过有限元分析和原型件实验确定采用陶瓷纤维与纳米级微孔材 料组合作为 HL-2M 真空室保温材料。在 30℃时,保温层的导热系数小于 0.027W⋅m⁻¹·℃⁻¹;300℃时,导热系数 小于 0.038W⋅m⁻¹·℃⁻¹。在保温层厚度 25mm、热面温度 300℃且达到稳态时,冷面可控制在 85℃以下,线圈侧的 温度低于 60℃,整体热损失小于 12kW,满足 HL-2M 真空室烘烤需求。      

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.     

Negative thermal expansion: Mechanisms and materials

Negative thermal expansion (NTE) of materials is an intriguing phenomenon challenging the concept of traditional lattice dynamics and of importance for a variety of applications. Progresses in this field develop markedly and update continuously our knowledge on the NTE behavior of materials. In this article, we review the most recent understandings on the underlying mechanisms (anharmonic phonon vibration, magnetovolume effect, ferroelectrorestriction and charge transfer) of thermal shrinkage and the development of NTE materials under each mechanism from both the theoretical and experimental aspects. Besides the low frequency optical phonons which are usually accepted as the origins of NTE in framework structures, NTE driven by acoustic phonons and the interplay between anisotropic elasticity and phonons are stressed. Based on the data documented, some problems affecting applications of NTE materials are discussed and strategies for discovering and design novel framework structured NET materials are also presented.     

Assessing Earthquake Forecast Performance Based on b Value in Yunnan Province,China

Many studies have shown that b values tend to decrease prior to large earthquakes. To evaluate the forecast information in b value variations, we conduct a systematic assessment in Yunnan Province, China, where the seismicity is intense and moderate–large earthquakes occur frequently. The catalog in the past two decades is divided into four time periods (January 2000–December 2004, January 2005–December 2009, January 2010–December 2014, and January 2015–December 2019). The spatial b values are calculated for each 5-year span and then are used to forecast moderate-large earthquakes (M ≥ 5.0) in the subsequent period. As the fault systems in Yunnan Province are complex, to avoid possible biases in b value computation caused by different faulting regimes when using the grid search, the hierarchical space–time point-process models (HIST-PPM) proposed by Ogata are utilized to estimate spatial b values in this study. The forecast performance is tested by Molchan error diagram (MED) and the efficiency is quantified by probability gain (PG) and probability difference (PD). It is found that moderate–large earthquakes are more likely to occur in low b regions. The MED analysis shows that there is considerable precursory information in spatial b values and the forecast efficiency increases with magnitude in the Yunnan Province. These results suggest that the b value might be useful in middle- and long-term earthquake forecasts in the study area.     

HL-2M装置真空室预装阶段检漏试验

通过在加工现场和安装现场搭建的真空辅助系统、四极质谱计及氦检漏仪组成的检漏系统,运用残余气体分析和氦质谱检漏方法在冷态下对HL-2M真空室扇形段及真空室整体进行了真空检漏试验.对漏点进行修复后,测试了真空室的极限真空度和总漏气率等.真空室经过72h的抽气后,真空度达到3.7×10?5Pa,超过了1.0×10?4Pa的预...     

HL-2M初始等离子体放电阶段的辉光放电清洗系统电极的设计与分析

针对HL-2M装置初始等离子体放电阶段所需的直流辉光放电清洗系统的电极进行了设计.对辉光放电清洗系统在不同工况下的系统负载进行了分析和拟定,并确定了电极结构设计分析标准.根据系统电极的结构特点并结合系统负载规范与分析标准,依据不同的失效模式对电极进行了失效分析.分析结果表明,此针对初始等离子体放电的电极设计能可靠安全运...     

原子激发态在高频强激光作用下的光电离研究

本文通过数值求解动量空间的三维含时薛定谔方程, 研究了原子高激发态在高频激光脉冲作用下, 在电离阈值附近的光电子能谱和两维动量角分布. 研究结果表明: 在该能量范围内, 单光子电离过程的贡献是最主要的. 体系初态的主量子数可以由光电子能谱峰值的位置来确定; 体系初态的角量子数可以通过光电子的两维动量角度分布确定. 在比较宽泛的参数范围内, 这一规律不随入射激光的强度和脉冲时间宽度的改变而改变, 因此原则上可以利用它对原子的初态进行识别. 此外, 还研究了体系的初态为相干叠加态, 光电子动量谱随着叠加态相对相位的变化规律. 关键词： 阈上电离 激发态 高频激光脉冲 两维动量角度分布     

近玻尔速度Ne2+离子穿过碳膜引起的电子发射

本文测量了入射能为2–25 keV/u的Ne²⁺离子穿过不同厚度碳膜诱导的前向、后向 (分别对应出射表面和入射表面) 电子发射产额. 实验中通过改变炮弹离子的能量, 系统的研究了势能沉积、电子能损以及反冲原子对前向、后向电子发射产额的贡献. 结果表明, 离子的势能沉积只对后向电子发射有贡献, 前向、后向电子发射产额分别与Ne²⁺离子在薄膜出射、入射表面的电子能损近似成正比关系, 其中电子能损很低 (对应于离子能量很低) 的时候, 反冲原子对电子发射的贡献不能忽略. 关键词： 近玻尔速度 电子发射 电子能损 反冲原子     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

含磁控和荷控两种忆阻器的混沌电路设计与仿真

利用惠普实验室荷控和磁控两种忆阻器模型设计了一个五阶混沌电路. 数值仿真结果表明该电路在参数变化情况下能产生Hopf分岔和反倍周期分岔两种分岔行为,并能产生双涡卷、单涡卷、周期态等不同相轨道. 为了验证电路的混沌行为,利用基本元器件设计了惠普实验室荷控和磁控忆阻器模拟器,并将其应用到对所设计电路中进行Pspice仿真,电路仿真结果验证了理论分析的正确性. 关键词： 混沌电路 HP忆阻器 模拟器 Pspice仿真