Spatial coherence and coherent interactions of broadband dispersed laser beams

Analytical expressions are obtained that describe the changes in the degree of coherence and in the thickness of the coherence layers occurring upon propagation of a dispersed broadband laser beam. It is found that the greater the tilting of the coherence layers with respect to the phase fronts, the more rapidly the spatial coherence is violated with increasing distance. A comparison with the case of an undispersed beam is performed. It is shown that, as the beam propagates, the decrease in the degree of coherence is accompanied by the appearance of spatial fluctuations of this parameter. The degree of mutual coherence of intersecting dispersed beams with parallel correlated coherence layers, which determines the efficiency of their coherent interaction, is investigated. The existence of spatial fluctuations of the degree of mutual coherence is established.     

Finite-Band Potentials with Trigonal Curves

We construct Dubrovin equations and trace formulas for finite-band operators with trigonal curves and present some examples.     

On Periodic Solutions of Degenerate Singularly Perturbed Linear Systems with Multiple Elementary Divisor

We establish sufficient conditions for the existence and uniqueness of a periodic solution of a system of linear differential equations with a small parameter and a degenerate matrix of coefficients of derivatives in the case of a multiple spectrum of a boundary matrix pencil. We construct asymptotics of this solution.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

Laser diagnostics of nanoscale dielectric films on absorbing substrate by differential reflectivity and ellipsometry

The differential reflection characteristics for ultrathin inhomogeneous dielectric film on absorbing substrate are investigated in the long-wavelength approximation. The obtained first-order expressions for differential reflectivity and changes in the ellipsometric angles caused by ultrathin layer are of immediate interest to the solution of the inverse problem. The method to determine the averaged values (not the realistic profile) of refractive index for inhomogeneous nanometric films are shown. The novel possibilities for determining the dielectric constant and thickness of nanoscale homogeneous films by the differential ellipsometric and reflectivity measurements are developed, and a simple method to estimate whether the nanometric film is homogeneous or not is also discussed.