Extraction of strontium using an irradiated extraction agent of crown structure

The partition coefficient of strontium upon its extraction from the aqueous solutions of picric acid into chloroform containing DC-18-crown-6, B-15-crown-5 after their exposition to gamma radiation has been studied. A significant decrease of the partition coefficient in the studied range of doses 10–70 kGy was observed. This effect can be attributed to the radiolytic products of chloroform. The radiation destruction as well as dehydrogenation of crown ethers were not observed.     

The infrared spectra of the halogen isocyanate and thiocyanate vapor molecules

Fourier transform infrared spectroscopy has been used to investigate the IR spectra of the XNCO (X = Cl, Br, I, CN), the XSCN (X = Cl, Br, I) and the NCNCS vapor molecules from 4800 to 400 cm⁻¹. Vibrational frequencies have been determined for each normal mode of vibration in each molecule in this region.     

Solvothermal synthesis of TiO2: anatase nanocrystals and rutile nanofibres from TiCl4 in acetone

This work reports a new synthetic approach for single‐phase TiO₂ nanomaterials by solvothermal treatment of titanium tetrachloride in acetone at 80–110 °C. Small, uniform, and yet size‐tunable (5–10 nm) anatase titania nanocrystallites were obtained using a low concentration of TiCl₄ in acetone (i.e., at molar ratios of TiCl₄/acetone ≤ 1:15) in the temperature range of 80–110 °C, while rutile nanofibers were synthesized using a high concentration of TiCl₄ (e.g., TiCl₄/acetone = 1:10) at 110 °C. Copyright © 2007 John Wiley & Sons, Ltd.     

Voltage ‐ Current Study of an Atmospheric Dielectric Barrier Discharge

The discharge behaviour of an atmospheric dielectric barrier parallel plate discharge, used for surface treatment, is studied. Since an uniform plasma is preferable for surface treatment, filaments must be avoided in the discharge. The occurrence of filaments can be detected by measuring the current flowing through the discharge. Current and voltage measurements give an indication of the power consumption by the plasma. The power consumption of the plasma as function of the applied frequency is examined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The large-particle method in arbitrary nets and its application to the solution of problems in the aeroelasticity of a parachute

Modifications are introduced into the large-particle method to make it possible to use the method in arbitrary nonrectangular computing nets in the study of the flow of an ideal compressible gas over mobile thin permeable membranes. A problem in the aeroelasticity of a parachute is stated. An example is given of the solution of a problem in the stationary formulation for an axially symmetric parachute in the wake of a cylindrical leading body for supersonic flow.Translated fromDinamicheskie Sistemy, No. 6, 1987, pp. 16–22     

On the problem of stochastic differential inclusions

In this paper we study a stochastic differential equation with multivalued maximally monotone drift operator. Under certain assumptions on the growth of the multivalued operator we prove a theorem on the existence and uniqueness of the solution of such an equation.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 54–59, 1987.     

Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen