Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon

The strong effect of a magnetic field on the starting stress and mobility of individual dislocations is discovered in silicon grown by the Czochralski method with a high concentration of dissolved oxygen. It is shown that exposure of dislocations preliminarily introduced into the sample to a magnetic field considerably reduces the starting stresses for the motion of these dislocations. The effect is not observed in samples with a low oxygen concentration. It is assumed that the magnetic field induces singlet-triplet transitions in thermally excited states of silicon-oxygen complexes in the dislocation core, thus stimulating a change in the state (atomic configuration) of oxygen already located at dislocations. As a result, the mean binding energy of oxygen with a dislocation decreases.     

Study of the viscoelastoplastic deformation of an element of a body with a three-branch loading path

Institute of Mechanics, Academy of Sciences of the Ukraine, Kiev. Translated from Prikladnaya Mekhanika, Vol. 27, No. 12, pp. 26–33, December, 1991.     

Completeness and unbiased estimation of mean vector in the multivariate group sequential case

We consider estimation after a group sequential test about a multivariate normal mean, such as a χ² test or a sequential version of the Bonferroni procedure. We derive the density function of the sufficient statistics and show that the sample mean remains to be the maximum likelihood estimator but is no longer unbiased. We propose an alternative Rao-Blackwell type unbiased estimator. We show that the family of distributions of the sufficient statistic is not complete, and there exist infinitely many unbiased estimators of the mean vector and none has uniformly minimum variance. However, when restricted to truncation-adaptable statistics, completeness holds and the Rao-Blackwell estimator has uniformly minimum variance.     

On the possibility of applying kinoform elements in mirror projectors for EUV lithography

The potential of the technology of reflective diffraction (holographic) optical elements intended for the EUV range is considered, and their application in projection lithography is discussed.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

On a method for studying the norm and the stability of solutions

We present a new method (the method of unitary transformations), which differs from the existing ones, for studying the stability and the norm of solutions of regular and singularly perturbed initial-value problems for nonautonomous linear and quasilinear systems of ODE with normal and “almost normal” matrices. Our results generalize similar theorems for the corresponding systems with constant matrices. This method allows one to avoid rather cumbersome traditional analysis, including the Lyapunov function method. For special classes of singularly perturbed problems, the method provides estimates for the norms of solutions in the presence of exponential or power boundary layers; these observations enrich the collection of known results in this field.     

Lower bounds for positive and negative parts of measures and the arrangement of singularities of their Laplace transforms

For a real measure with variation V(x) satisfying the estimate V(x) ≤ c ₀ exp(Cx) and for the Laplace transform holomorphic in the disk {¦ -C¦ ≤ C} and having at least one pole of order m, we obtain lower bounds for the positive and negative parts of the measure V _± (x) > cx ^m , x > x ₀. We establish lower bounds for V _+- (x) on “short” intervals. Applications to number theory of the results obtained are considered.     

Strict Stability of Impulsive Differential Equations

In this paper, we will extend the strict stability to impulsive differential equations. By using Lyapunov functions, we will get some criteria for the strict stability of impulsive differential equations, and we can see that impulses do contribute to the system＇s strict stability behavior. An example is also given in this paper to illustrate the efficiency of the obtained results.     

Tensor analyzing power T 20 of the dd → 3Hen and dd → 3Hp reactions at zero angle for energies 140, 200, and 270 MeV

RIKEN Accelerator Research Facility data on the tensor analyzing power T ₂₀ of the dd → ³Hen and dd → ³Hp reactions at zero angle for deuteron kinetic energies of 140, 200, and 270 MeV are reported. The observed positive sign of T ₂₀ clearly demonstrates the sensitivity to the D/S-wave ratio in the ³He and ³H wave functions in the energy range of the experiment. Data on T ₂₀ for the ³Hen channel are in agreement with those for the ³Hp channel within the experimental errors.