表面粗糙度对玻璃钢材料放气速率影响的试验研究

设计了一套基于压差流量法的试验装置来测量不同表面粗糙度玻璃钢试样的放气速率;采用两种砂纸(100#和500#)打磨而得到两种不同表面粗糙度玻璃钢试样;采用扫描探针显微镜对试样表面粗糙度进行测量,测量了不同表面粗糙度试样在不同温度下的放气速率。试验结果表明:测量室温度越高,玻璃钢试样的放气速率越大;试样的表面粗糙度越大,其放气速率越大。     

双中心全息记录的矢量分析与记录方向优化

对描述双掺杂晶体非挥发性全息记录动力学过程的Kukhtarev方程进行了矢量分析,分析中考虑了体光生伏特效应和外加电场的作用。在小信号近似的基础上给出了双中心全息记录中记录与固定阶段空间电荷场的矢量解析解。在综合考虑空间电荷场的各向异性以及晶体有效电光系数的各向异性后,给出了双中心全息记录的优化记录方向。结果表明,对(Fe,Mn)∶LiNbO3晶体633nm寻常光记录,优化记录方向主要由有效电光系数决定,光栅波矢与光轴夹角为22°,方位角为30°;对(Fe,Mn)∶LiNbO3晶体633nm非寻常光记录,优化记录方向主要由固定空间电荷场决定,光栅波矢与光轴夹角为44°,方位角为90°。     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

双δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.     

Measurements of CP-violating asymmetries and branching fractions in B meson decays to eta'K

We present measurements of the branching fractions of the decays B+-->eta'K+ and B0-->eta'K0. For B0-->eta(')K(0)(S) we also measure the time-dependent CP-violation parameters S eta'(K(0)(S)) and C eta'(K(0)(S)), and for B+-->eta'K+ the time-integrated charge asymmetry A(ch). The data sample corresponds to 88.9 x 10(6) BB pairs produced by e(+)e(-) annihilation at the Upsilon(4S). The results are B(B+-->eta'K+)=(76.9+/-3.5+/-4.4) x 10(-6), B(B0-->eta'K0)=(60.6+/-5.6+/-4.6) x 10(-6), S eta'(K(0)(S))=0.02+/-0.34+/-0.03, C eta'(K(0)(S))=0.10+/-0.22+/-0.04, and A(ch)=0.037+/-0.045+/-0.011.     

Search for D0-D(-)0 mixing and a measurement of the doubly Cabibbo-suppressed decay rate in D0-->Kpi decays

We present results of a search for D0-D(-)0 mixing and a measurement of R(D), the ratio of doubly Cabibbo-suppressed decays to Cabibbo-favored decays, using D0-->K+pi- decays from 57.1 fb(-1) of data collected near sqrt[s]=10.6 GeV with the BABAR detector at the PEP-II collider. At the 95% confidence level, allowing for CP violation, we find the mixing parameters x('2)<0.0022 and -0.056相似文献   

Value of Optical Bypass in Packet Ring Networks

This paper firstly examines the value of optical bypass scheme in packet ring networks. An Integer Linear Program (ILP) formulation is presented and analytical results under different traffic patterns are given.     

An Experimental Study of Mg Aggregation in AA5754 Alloys by Positron Annihilation Spectroscopy

Defects in an AA5754 （Al-3.0%Mg） alloy are investigated by coincidence Doppler broadening spectroscopy and positron lifetime spectroscopy. The results indicate enhancement of positron trapping by Mg atoms in this Al-Mg alloy after quenching treatment at 623K, which may be due to the formation of vacancy-Mg complexes or the aggregation of Mg near the vacancy sites. It is speculated that the aggregation of Mg atoms in the moderate temperature range is responsible for cracking in spot welding of AA5754 alloys.     

Widely tunable, high-repetition-rate, dual signal-wave optical parametric oscillator by using two periodically poled crystals

This paper reports on a high-repetition-rate dual signal-wave (DSW) optical parametric oscillator (OPO) operating at the 1.5 μm band with tunable wavelength intervals from 2.5 nm to 69.1 nm. Two periodically poled crystals, a periodically poled lithium niobate (PPLN) with multiple gratings and a single grating MgO-doped PPLN (PPMgOLN), are cascaded in the same OPO cavity to generate dual signal-waves by using quasi-phase-matched (QPM) technique. The pump source was a Q-switched diode-pumped Nd:YVO₄ laser operating at 50 kHz. At an incident pump power of 3 W, an average output power of 169.6 mW at 1489.2 nm and 1558.3 nm has been achieved.